Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Interfaces in heterostructures of AlInGaN/GaN/Al2O3

Rutherford backscattering/channeling (RBS/C) and X-ray diffraction (XRD) are used to comprehensively characterize a heterostructure of AlInGaN/GaN/Al2O3(0001). The AlInGaN quaternary layer was revealed to process a high crystalline quality with a minimum yield of 1.4% from RBS/C measurements. The channeling spectrum of (1 (2) under bar 13) exhibits higher dechanneling than that of (0001) at the interface of AlInGaN/GaN. XRD measurements prove a coherent growth of AlInGaN on the GaN template layer. Combining RBS/C and XRD measurements, we found that the interface of GaN/Al2O3 is a nucleation layer, composed of a large amount of disorders and cubic GaN slabs, while the interface of AlInGaN/GaN is free of extra disordering (i.e. compare with the GaN layer). The conclusion is further evidenced by transmission electron microscopy (TEM). (c) 2005 Elsevier Ltd. All rights reserved.

Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice

Both the photoluminescence peaks corresponding to the vertical transitions and the nonvertical transitions in an n-i-p-i GaAs superlattice are clearly observed. The redshifts of the two peaks with increasing temperature are: discussed in terms of the temperature-dependent carrier separation effect.

Analytical study of the antiferromagnetic Heisenberg films

With the variational cumulant expansion (VCE) method, the thermodynamic behaviors of S = 1/2 antiferromagnetic Heisenberg films in simple cubic lattices are studied analytically. From the analytic properties of the free energy, in principle we are able to calculate analytically the critical temperatures T-c(L) and the thermodynamic functions, to any order cumulant as the functions of the number of L (the hyperlayers in the hyperfilm). Explicit expressions for T-c(L) up to the fourth order are given. A comparison with the existing results for 3-dimensional system is given. The effective range of the interaction is obtained from numerical results.

Degenerate four-wave-mixing signals from dc- and ac-driven semiconductor superlattice

Within the one-dimensional tight-binding model;rnd chi-3 approximation, we have calculated four-wave-mixing (FWM) signals for a semiconductor superlattice in the presence of both static and high-frequency electric fields. When the exciton effect is negligible, the time-periodic field dynamically delocalizes the otherwise localized Wannier-Stark states, and accordingly quasienergy band structures are formed, and manifest in the FWM spectra as a series of equally separated continua. The width of each continuum is proportional to the joint width of the valence and conduction minibands and is independent of the Wannier-Stark index. The realistic homogeneous broadening blurs the continua into broad peaks, whose line shapes, far from the Lorentzian, vary with the delay time in the FWM spectra. The swinging range of the peaks is just the quasienergy bandwidth. The dynamical delocalization (DDL) also induces significant FWM signals well beyond the excitation energy window. When the Coulomb interaction is taken into account, the unequal spacing between the excitonic Wannier-Stark levels weakens the DDL effect, and the FWM spectrum is transformed into groups of discrete lines. Strikingly, the groups are evenly spaced by the ac field frequency, reflecting the characteristic of the quasienergy states. The homogeneous broadening again smears out the line structures, leading to the excitonic FWM spectra quite similar to those without the exciton effect. However, all these features predicted by the dynamical theory do not appear in a recent experiment [Phys. Rev. Lett. 79, 301 (1997)], in which, by using the static approximation the observed Wannier-Stark ladder with delay-time-dependent spacing in the FWM spectra is attributed to a temporally periodic dipole field, produced by the Bloch oscillation of electrons in real space. The contradiction between the dynamical theory and the experiments is discussed. In addition, our calculation indicates that the dynamical localization coherently enhances the time-integrated FWM signals. The feasibility of using such a technique to study the dynamical localization phenomena is shown. [S0163-1829(99)10607-6].

Electronic structures of cubic lattice quantum dots

In this article, we give the electronic structure and optical transition matrix elements of coupled quantum dots (QDs) arranged as different cubic lattices: simple cubic (sc), body-centered cubic (bcc), and face-centered cubic (fcc) superlattices. The results indicate that electron and hole energies of bcc, sc, and fcc superlattices are the lowest, the highest, and the middle, respectively, for the same subband under the same QD density or under the same superlattice constant. For a fixed QD density, the confinement effects in sc, fcc, and bcc superlattices are the strongest, the middle, and the weakest, respectively. There are only one, two, and four confined energy bands, with energies lower than the potential barrier for sc, bcc, and fcc QD superlattices, respectively. The results have great significance for researching and making semiconductor quantum dot devices. (C) 1998 American Institute of Physics. [S0021-8979(98)02119-7]

Analog computation using quantum-dot cell network

A novel analog-computation system using a quantum-dot cell network is proposed to solve complex problems. Analog computation is a promising method for solving a mathematical problem by using a physical system analogous to the problem. We designed a novel quantum-dot cell consisting of three-stacked. quantum dots and constructed a cell network utilizing the nearest-neighbor interactions between the cells. We then mapped a graph 3-colorability problem onto the network so that the single-electron configuration of the network in the ground state corresponded to one of the solutions. We calculated the ground state of the cell network and found solutions to the problems. The results demonstrate that analog computation is a promising approach for solving complex problems.

Scaling and the thermal conductivity of the Frenkel-Kontorova model

We have studied the dependence of the thermal conductivity kappa on the strength of the interparticle potential lambda and the strength of the external potential beta in the Frenkel-Kontorova model. We found that the functional relation can be expressed in a scaling form, kappa(proportional to) lambda 3/2/beta(2 center dot). This result is first obtained by nonequilibrium molecular dynamics. It is then confirmed by two analytical methods, the self-consistent phonon theory and the self-consistent stochastic reservoirs method. The thermal conductivity kappa is therefore a decreasing functon of beta and an increasing function of lambda.

Asymmetric heat conduction through a weak link

We study the heat conduction of two nonlinear lattices joined by a weak harmonic link. When the system reaches a steady state, the heat conduction of the system is decided by the tunneling heat flow through the weak link. We present an analytical analysis by the combination of the self-consistent phonon theory and the heat tunneling transport formalism, and then the tunneling heat flow can be obtained. Moreover, the nonequilibrium molecular dynamics simulations are performed and the simulations results are consistent with the analytical predictions.

Friction phenomena and phase transition in the underdamped two-dimensional Frenkel-Kontorova model

Locked-to-sliding phase transition has been studied in the driven two-dimensional Frenkel-Kontorova model with the square symmetric substrate potential. It is found that as the driving force increases, the system transfers from the locked state to the sliding state where the motion of particles is in the direction different from that of driving force. With the further increase in driving force, at some critical value, the particles start to move in the direction of driving force. These two critical forces, the static friction or depinning force, and the kinetic friction force for which particles move in the direction of driving force have been analyzed for different system parameters. Different scenarios of phase transitions have been examined and dynamical phases are classified. In the case of zero misfit angle, the analytical expressions for static and kinetic friction force have been obtained.

Uniform YVO4:Ln(3+) (Ln = Eu, Dy, and Sm) nanocrystals: Solvothermal synthesis and luminescence properties

Well-dispersed YVO4:Ln(3+) (Ln = Eu, Dy, and Sm) nanocrystals with uniform morphology and size have been synthesized via a facile solvothermal route. XRD results demonstrate that all of the three samples can be well indexed to the pure tetragonal phase Of YVO4, indicating that the Eu3+, Dy3+, and Sm3+ have been effectively doped into the host lattices of YVO4. TEM images show that the YVO4 nanocrystals exhibit ellipsoid shape and a mean size of about 20 nm, which is in good agreement with the estimation of XRD results.

Simulation of Banded Spherulite Patterns by Coupled Logistic Map Lattice Model in Three Dimensions

Banded spherulite patterns are simulated in three dimensions by means of a Coupled Logistic map lattice model. The patterns obtained by numerical calculation are consistent with those in experiments. The simulation results also indicate that the hand spacing is decreased with the increase of parameter mu in the Logistic map and increased with the increase of the coupling parameter e for cube lattices, and increased with the increase of the thickness of the lattice for polymer film, which is quite similar to the results in some experiments. Spiral pattern in three dimensions is also shown in this paper, which helps us understand the form of banded spherulite in polymers.

A {Co-32} Nanosphere Supported by p-tert-Butylthiacalix[4]arene

Calixarene-capped Co-32 clusters are constructed by a sodalite Co-24(II) cage and an encapsulated Co-8(III) cube. The spherical units are arranged into three isomeric structures, two of which are stacked by the bcc lattices and the third of which is assembled by the cubic closest packing of the spherical units.

Comparative study of Ga2O3 : Dy3+ phosphors prepared by three methods

Trivalent dysprosium (Dy3+)-activated beta-gallium oxide (beta-Ga2O3) phosphors were synthesized by solid-state (SS), coprecipitation (CP), and citrate gel (CG) methods, respectively. The resulting beta-Ga2O3:Dy3+ phosphors were well characterized by X-ray diffraction, field-emission scanning electron microscopy (FESEM), and by photoluminescence and cathodoluminescence spectra. The phosphors prepared by different methods show different luminescence properties under the excitation of UV and low-voltage cathode rays. There exists an energy transfer from the beta-Ga2O3 host lattices to Dy3+, and the energy transfer efficiency was higher in the CG-derived phosphors than those of the SS- and CP-derived phosphors. Factors influencing the intensity of luminescence and the energy transfer efficiency from beta-Ga2O3 host to Dy3+ in beta-Ga2O3:Dy3+ phosphors were investigated in detail. It is shown that the CG method is the most respected process for the preparation of beta-Ga2O3:Dy3+ phosphors.

Luminescence and energy transfer properties of Ca2Gd8(SiO4)(6)O-2 : A(A = Pb2+, Tm3+) phosphors

Ca2Gd8(SiO4)(6)O-2: A(A = Ph2+, Tm3+) phosphors were prepared through the sol-gel process. X-ray diffraction (XRD), scanning electron microseopy(SEM) and photoluminescence spectra were used to characterize the resulting phosphors. The results of XRD indicate that the phosphors crystallized completely at 1000 degreesC. SEM study reveals that the average grain size is 300 similar to 1000 nm. In Ca2Gd8(SiO4)(6)O-2: Tm3+ phosphors, the Tm3+ shows its characteristic blue emission at 456 nm (D-1(2)-F-3(4)) upon excitation into its H-3(6)-D-1(2)(361 nm), with an optimum doping concentration of 1 mol% of Gd3+ in the host lattices. In Ca2Gd8(SiO4)(6)O-2: Pb2+, Tm3+ phosphors, excitation into the Ph2+ at 266 nm (S-1(0)-P-3(1)) yields the emissions of Gd3+ at 311 nm (P-6-S-8) and Tm3+ at 367 nm (D-1(2)-H-3(6)) and 456 our (D-1(2)-F-3(4)), indicating that energy transfer processes of Pb2+-Gd3+ and Ph2+-Tm3+ have occur-red in the host lattices.