68 resultados para Rate Equation (Re) Model


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为了有效地补偿激光二极管(LD)侧向抽运1000 Hz重复率电光调Q Nd:YAG激光器棒状增益介质内存在的热致双折射损耗,设计了一种新颖的双调Q晶体开关复合谐振腔结构。实验结果表明,设计的双调Q晶体开关结构Nd:YAG激光器输出激光脉冲能量比单调Q晶体开关结构的非补偿腔输出能量提高了56%,当侧面抽运半导体激光器输出功率达到450 W时,激光输出达到30 mJ/pulse,输出光束偏振度优于10:1,激光脉冲宽度约14 ns。并获得6.7%的光-光转换效率。通过对双调Q开光激光谐振腔进行建模,并用求解速

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比较了掺钕光纤和掺镱光纤对1064nm光放大的特点.基于速率方程和传输方程,数值分析了在915nm泵浦下双程掺镱光纤放大器的增益特征,并且和传统的单程放大进行了比较.分析了信号光和泵浦光,以及粒子数沿着光纤方向的分布特点.最后对双程掺镱光纤放大器进行了优化.

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本文比较了考虑与不考虑激光下能级弛豫过程的两种形式的调Q速率方程,并以二极管激光侧面泵浦电光调QNd:YAG为例,分别采用两种形式的调Q速率方程,分析了调Q过程中上、下能级粒子数变化过程,计算了输出调Q激光脉冲波形、峰值功率以及能量,进行了比较分析,并解释了调Q“子脉冲”与拖尾现象。

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Ridge-waveguide AlGaInAs/AlGaAs distributed feedback lasers with lattice-matched GaInP gratings were fabricated and their light-current characteristics, spectrum and far-field characteristics were measured. On the basis of our experimental results we analyze the effect of the electron stopper layer on light-current performance using the commercial laser simulation software PICS3D. The simulator is based on the self-consistent solution of drift diffusion equations, the Schrodinger equation, and the photon rate equation. The simulation results suggest that, with the use of a 80 nm-width p-doped Al0.6GaAs electron stopper layer, the slope efficiency can be increased and the threshold current can be reduced by more than 10 mA.

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Temperature dependence of optical properties of GaInNAs/GaAs quantum wells (QWs) has been studied by photoluminescence (PL) and time-resolved PL. A rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results strongly suggest that the non-radiative recombination process plays a very important role at low temperature. In the TRPL measurement the shape of the PL decay curve shows significant difference under different excitation powers. It is attributed to the different involvement of non-radiative recombination in the overall recombination process. The TRPL data are well fitted with the rate equation involving both the radiative and non-radiative recombination. (c) 2006 Elsevier B.V. All rights reserved.

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The nonradiative recombination effect on carrier dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence (TRPL) and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well stimulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.

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The influence of nonradiative recombination on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence under various excitation intensities. It is found that the PL decay process strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual nonexponential behavior and show a convex shape. By introducing a new parameter of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. The cw PL data further demonstrate the nonradiative recombination effect on the optical properties of GaInNAs/GaAs quantum wells. (c) 2006 American Institute of Physics.

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We derive the generalized rate equation for the coupled quantum-dot (QD) system irradiated by a microwave field in the presence of a quantum point contact. It is shown that when a microwave field is tuned in resonance with the energy difference between the ground states of two QD's, the photon-assisted tunneling occurs and, as a result, the coupled QD system may be used as the single qubit. Furthermore, we show that the oscillating current through the detector decays drastically as the dephasing rate increases, indicating clearly the influence of the dephasing effect induced by the quantum point contact used as a detecting device.

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The photoluminescence of self-assembled multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot (QD) was measured at various temperatures. Strong photoluminescence of wetting layer (WL) and quantum dots were observed at the same time. Furthermore, direct excitons thermal transfer process between the wetting layer and quantum dots was observed. In the study of temperature dependence of PL intensity it was found that the PL peak of wetting layer contains two quenching processes: at low temperature, excitons are thermally activated from localized states to extended two-dimensional states and then trapped by QDs; at high temperature excitons quench through the X valley of barriers. Using rate equation excitons thermal transfer and quenching processes were analyzed quantitatively.

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The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.

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Using a transport model coupled with a phase-space coalescence afterburner, we study the triton-He-3 (t-He-3) ratio with both relative and differential transverse flows in semicentral Sn-132 + Sn-124 reactions at a beam energy of 400 MeV/nucleon. The neutron-proton ratios with relative and differential flows are also discussed as a reference. We find that similar to the neutron-proton pairs, the t-He-3 pairs also carry interesting information regarding the density dependence of the nuclear symmetry energy. Moreover, the nuclear symmetry energy affects more strongly the t-He-3 relative and differential flows than the pi(-)/pi(+) ratio in the same reaction. The t-He-3 relative flow can be used as a particularly powerful probe of the high-density behavior of the nuclear symmetry energy.

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Using a transport model coupled with a phase-space coalescence after-burner we study the triton-He-3 relative and differential transverse flows in semi-central Sn-132 + Sn-124 reactions at a beam energy of 400 MeV/nucleon. We find that the triton-He-3 pairs carry interesting information about the density dependence of the nuclear symmetry energy. The t-He-3 relative flow can be used as a particularly powerful probe of the high-density behavior of the nuclear symmetry energy.

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Extraction kinetics of thorium(IV) with primary amine N1923 in sulfate media has been investigated by a constant interfacial cell with laminar flow. Studies of interfacial tension and effects of the stirring rate, temperature, and specific interfacial area on mass transfer rate show that the most probable reaction zone takes place at the liquid-liquid interface. According to the experimental data correlated as a function of the concentration of the relevant species involved in the extraction reaction, the rate equation of extracting thorium has been obtained as follows: -d[Th(IV)]((o))/dt = 10(-3.10)center dot[Th(IV)](0.89)center dot[(RNH3)(2)SO4](0.74).

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The extraction and stripping kinetics of yttrium(III) with bis(2,4,4-trimethylpentyl) phosphinic acid (Cyanex 272, HA) dissolved in heptane as an acid extractant have been investigated by constant interfacial cell with laminar flow. The experimental hydrodynamic conditions have been chosen so that the contribution of diffusion to the measured rate of reaction is minimized. The plot of interfacial area on the rate has shown a linear relationship, which makes the interface the most probable local for the chemical reactions. At the same time, the extraction thermodynamic and kinetic methods are compared to determine the equilibrium extraction constant. A rate equation and the rate-determining step of the extraction and stripping of yttrium(III) have also been obtained, respectively.

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The interfacial tension is measured for Cyanex 302 in heptane and adsorption parameters are calculated according to Gibbs equation and Szyskowski isotherm. The results indicate that Cyanex 302 has a high interfacial activity, allowing easy extraction reaction to take place at the liquid-liquid interface. The extraction kinetics of yttrium(III) with Cyanex 302 in heptane are investigated by a constant interfacial cell with laminar flow. The effects of stirring rate, temperature and specific interfacial area on the extraction rate are discussed. The results suggest that the extraction kinetics is a mixed regime with film diffusion and an aqueous one-step chemical reaction proposed to be the rate-controlling step. Assuming the mass transfer process can be formally treated as a pseudo-first-order reversible reaction with respect to the metal cation, the rate equation for the extraction reaction of yttrium(III) with Cyanex 302 at pH <5 is obtained as follows:R-f = 10(-7.85)[Y(OH)(2)(+)]((a))[H(2)A(2)]((o))(1.00)[H+]((a))(-1.00)Diffusion parameters and rate constants are calculated through approximate solutions of the flux equation.