Single base-resolution methylome of the silkworm reveals a sparse epigenomic map

Epigenetic regulation in insects may have effects on diverse biological processes. Here we survey the methylome of a model insect, the silkworm Bombyx mori, at single-base resolution using Illumina high-throughput bisulfite sequencing (MethylC-Seq). We conservatively estimate that 0.11% of genomic cytosines are methylcytosines, all of which probably occur in CG dinucleotides. CG methylation is substantially enriched in gene bodies and is positively correlated with gene expression levels, suggesting it has a positive role in gene transcription. We find that transposable elements, promoters and ribosomal DNAs are hypomethylated, but in contrast, genomic loci matching small RNAs in gene bodies are densely methylated. This work contributes to our understanding of epigenetics in insects, and in contrast to previous studies of the highly methylated genomes of Arabidopsis(1) and human(2), demonstrates a strategy for sequencing the epigenomes of organisms such as insects that have low levels of methylation.

Mitochondrial genomes of two luminous beetles, Rhagophthalmus lufengensis and R-ohbai (Arthropoda, Insecta, Coleoptera)

We determined the mitochondrial MA (mtDNA) sequences of two luminous beetles (Arthropoda, Insecta, Coleoptera), Rhagophthalmus lufengensis from Yunnan, China and Rhagophthalmus ohbai from Yaeyama Island, Japan. We identified all the 37 mtDNA genes of R. l

Heroin impairs map-picture-following and memory tasks dependent on gender and orientation of the tasks

Male and female heroin-dependent patients (HDPs) matched with "normal" people were tested on 4 topographical orientation tasks: schematic map-following, map-memory, schematic picture-following, and picture-memory tasks. The results showed that, in general

COMPARISON OF MASTICATORY MORPHOLOGY BETWEEN RHINOPITHECUS-BIETI AND R-ROXELLANA

The masticatory apparatus for two endemic species of golden monkey in China, Rhinopithecus bieti and Rhinopithecus roxellana, were compared with those of macaques, Macaca and leaf monkeys, Presbytis. Multivariate analyses demonstrated that the two golden monkey species are distinct. Interspecies allometric analyses revealed that golden monkeys differ in their masticatory apparatus from both macaques and leaf monkeys. The prominent symphysial fusion, corpus, and sagittal condylar dimension of R. roxellana may produce efficient biting force on the incisal and posterior canine teeth, with the heavy reaction force barn on the temporomandibular joint. However, the well-developed bizygamatic width and mandibular height in R. bieti suggest that posterior canine function is similarly prominent in R. roxellana, while incisal function is not. (C) 1995 Wiley-Liss, Inc.

鱼类病原菌中R~+质粒的检出及其特性

本文研究了5个属的15株鱼类病原菌对17种抗菌药物的耐药性。其中，对β-内酰胺类和红霉素的耐药率最高，对妥布霉素最敏感。以E．coliK-12RC85为受体菌，鱼类病原菌为供体菌，采用细菌接合试验，从耐氨苄青霉素、四环素和磺胺的嗜水气单胞菌CJ26株中检测到一株耐四环素和磺胺的可自身传递的R质粒pWH9601。它对四环素的抗性可被四环素类药物所诱导。pWH9601上的耐药基因在供体菌和受体菌中的表达水平有所不同。该质粒可在37℃下，15min内通过接合方式，转移到E．coliK－12RC85中，而且这种转

A genetic map of large yellow croaker Pseudosciaena crocea

Genetic linkage maps were constructed for large yellow croaker Pseudosciaena crocea (Richardson, 1846) using AFLP and microsatellite markers in an F-1 family. Five hundred and twenty-three AFLP markers and 36 microsatellites were genotyped in the parents and 94 F-1 progeny. Among these, 362 AFLP markers and 13 SSR markers followed the 1:1 Mendelian segregation ratio (P > 0.05). The female genetic map contained 181 AFLP and 7 microsatellite markers forming 24 linkage groups spanning 2959.1 cM, while the male map consisted of 153 AFLP and 8 microsatellite markers in 23 linkage groups covering 2205.7 cM. One sex linked marker was mapped to the male map and co-segregated with the AFLP marker agacta355, suggesting an XY-male determination mechanism and this may be useful in the breeding of monosex populations. (c) 2007 Elsevier B.V. All rights reserved.

Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystals

A two dimensional silicon-on-insulator based photonic crystal structure is used to enhance the emission from colloidal HgTe nanocrystal quantum dots embedded in a thin polymer film. The enhancement is resonant to the leaky eigenmodes of the photonic crystals due to coherent scattering effects. Transmittance and photoluminescence experiments are presented to map the leaky mode dispersion and the angle dependence of the emission enhancement factor, which reaches values up to 80 (650) for vertical (oblique) emission in the telecommunication wavelength range.

Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN

Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the transition energies and optical properties in the R-plane ([1012]-oriented plane) GaN. The results show that (1) the transition energies decrease with the biaxial strains changing from -0.5 to 0.5%; and (2) giant optical anisotropy appears in the R-plane which is significantly affected by the biaxial strains. We clarify the relation between the strains and the polarization properties. Finally, we discuss the application of these properties to the R-plane GaN based devices. (c) 2009 The Japan Society of Applied Physics

Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates

Sapphire substrates were nano-patterned by inductive coupled plasma etching process. Nonpolar a-plane GaN films were grown on planar and nano-patterned r-plane sapphire substrates by metal organic chemical vapor deposition. The anisotropic characteristic and the crystalline quality of the a-plane GaN films were studied through XRD rocking curves. The cross section and surface morphologies of the a-plane GaN films were studied using SEM and AFM measurements, respectively. The crystal quality and surface flatness of the nonpolar a-plane GaN were greatly improved through the usage of the nano-patterned r-plane sapphire substrates. (C) 2008 Elsevier B.V. All rights reserved.

Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.