Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power

Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Application of step-scan FTIR to the research of quantum cascade lasers

The principle of step-scan Fourier transform infrared （FTIR） spectroscopy is introduced. Double modulation step-scan FTIR technique is used to obtain the quantum cascade laser＇s stacked emission spectra in the time domain. Optical property and thermal accumulation of devices due to large drive current are analyzed.

Structure and properties of InAs/AlAs quantum dots for broadband emission

The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy technique. The properties of materials and optics of such QD structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (PL) techniques. It is discovered that the inhomogeneous strain filed mainly exists below InAs QDs layers in the case of no wetting layer. The full width at half maximums (FWHMs) and intensities of PL emission peaks of InAs QDs are found to be closely related to the thickness of the thin AlAs layers. The InAs QDs on an eight monolayer AlAs layer, with wide FWHMs and large integral intensity of PL emission peaks, are favorable for producing broadband QD superluminescent diodes, external-cavity QD laser with large tuning range.

Numerical simulation of an adaptive optics system with laser propagation in the atmosphere

A comprehensive model of laser propagation in the atmosphere with a complete adaptive optics (AO) system for phase compensation is presented, and a corresponding computer program is compiled. A direct wave-front gradient control method is used to reconstruct the wave-front phase. With the long-exposure Strehl ratio as the evaluation parameter, a numerical simulation of an AO system in a stationary state with the atmospheric propagation of a laser beam was conducted. It was found that for certain conditions the phase screen that describes turbulence in the atmosphere might not be isotropic. Numerical experiments show that the computational results in imaging of lenses by means of the fast Fourier transform (FFT) method agree well with those computed by means of an integration method. However, the computer time required for the FFT method is 1 order of magnitude less than that of the integration method. Phase tailoring of the calculated phase is presented as a means to solve the problem that variance of the calculated residual phase does not correspond to the correction effectiveness of an AO system. It is found for the first time to our knowledge that for a constant delay time of an AO system, when the lateral wind speed exceeds a threshold, the compensation effectiveness of an AO system is better than that of complete phase conjugation. This finding indicates that the better compensation capability of an AO system does not mean better correction effectiveness. (C) 2000 Optical Society of America.

Effects of Noise and Detection Error in a Dynamic Adaptive Optics System

It is well known that noise and detection error can affect the performances of an adaptive optics (AO) system. Effects of noise and detection error on the phase compensation effectiveness in a dynamic AO system are investigated by means of a pure numerical simulation in this paper. A theoretical model for numerically simulating effects of noise and detection error in a static AO system and a corresponding computer program were presented in a previous article. A numerical simulation of effects of noise and detection error is combined with our previous numeral simulation of a dynamic AO system in this paper and a corresponding computer program has been compiled. Effects of detection error, readout noise and photon noise are included and investigated by a numerical simulation for finding the preferred working conditions and the best performances in a practical dynamic AO system. An approximate model is presented as well. Under many practical conditions such approximate model is a good alternative to the more accurate one. A simple algorithm which can be used for reducing the effect of noise is presented as well. When signal to noise ratio is very low, such method can be used to improve the performances of a dynamic AO system.

Quantum Monte Carlo study of the CO interaction with a dimer model surface for Cr(110)

The chemisorption of CO on a Cr( 110) surface is investigated using the quantum Monte Carlo method in the diffusion Monte Carlo (DMC) variant and a model Cr2CO cluster. The present results are consistent with the earlier ab initio HF study with this model that showed the tilted/ near-parallel orientation as energetically favoured over the perpendicular arrangement. The DMC energy difference between the two orientations is larger (1.9 eV) than that computed in the previous study. The distribution and reorganization of electrons during CO adsorption on the model surface are analysed using the topological electron localization function method that yields electron populations, charge transfer and clear insight on the chemical bonding that occurs with CO adsorption and dissociation on the model surface.

Quantum and variational monte-carlo interaction potentials for li2 (x1-sigma-g+)

Optimized trial functions are used in quantum Monte Carlo and variational Monte Carlo calculations of the Li₂(X ¹Σ⁺_g) potential curve. The trial functions used are a product of a Slater determinant of molecular orbitals multiplied by correlation functions of electron—nuclear and electron—electron separation. The parameters of the determinant and correlation functions are optimized simultaneously by reducing the deviations of the local energy E_L (E_L  Ψ⁻¹_THΨ_T, where Ψ_T denotes a trial function) over a fixed sample. At the equilibrium separation, the variational Monte Carlo and quantum Monte Carlo methods recover 68% and 98% of the correlation energy, respectively. At other points on the curves, these methods yield similar accuracies.

Optimization of tried wave-function in quantum monte-carlo method

A method for optimizing tried wave functions in quantum Monte Carlo method has been found and used to calculate the energies of molecules, such as H-2, Li-2, H-3+, H-3 and H-4. Good results were obtained.

Cone Effect in Astronomical Adaptive Optics System Investigated by a Pure Numerical Simulation

It is well-known that cone effect or focus anisoplanatism is produced by the limited distance of a laser guide star (LGS) which is created within the Earth atmosphere and consequently located at a finite distance from the observer. In this paper, the cone effect of the LGS for different vertical profiles of the refractive index structure constant Cn2 is numerically investigated by using a revised computer program of atmospheric propagation of optical wave and an adaptive optics (AO) system including dynamic control process. According to the practice, the overall tilt for the tilt-correction mirror is obtained from a natural star and the aberrated wavefront for phase correction of the deformable mirror is obtained from a LGS in our numerical simulation. It is surprisingly found that the effect of altitude of the LGS on the AO phase compensation effectiveness by using the commonly-available vertical profiles of Cn2 and the lateral wind speed in the atmosphere is relatively weak, and the cone effect for some Cn2 profiles is even negligible. It is found that the cone effect does not have obvious relationship with the turbulence strength, however, it depends on the vertical distribution profile of Cn 2 apparently. On the other hand, the cone effect depends on the vertical distribution of the lateral wind speed as well. In comparison to a longer wavelength, the cone effect becomes more obvious in the case of a shorter wavelength. In all cases concerned in this paper, an AO system by using a sodium guide star has almost same phase compensation effectiveness as that by using the astronomical target itself as a beacon. Effect of dynamic control process in an AO system on the cone effect is studied in this paper for the first time within our knowledge.

Quantum Efficiency And Temperature Coefficients Of Gainp/Gaas Dual-Junction Solar Cell

GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.