小麦光系统I的分离纯化及其光合特性的研究

从不同基因型的小麦京411和小偃54中分离纯化了PSI颗粒并研究了PSI颗粒的一些光合特性： 1. 测定了两种基因型小麦PSI颗粒的室温吸收光谱、低温荧光光谱，并进行了SDS-PAGE多肽分析。吸收光谱显示了红区680nm和蓝区439nm的两个最大吸收峰，低温荧光光谱显示了PSI特征的位于735nm左右的发射峰，同时SDS-PAGE也显示我们的制备物包括PsaA、PsaB、LHCI以及一些其它小分子量蛋白亚基。这些都表明我们从不同基因型小麦中获得了比较理想的PSI颗粒制备物。 2. 测定了京411类囊体膜和PSI颗粒的脂类组成和脂肪酸成分，发现PSI颗粒中也存在着类囊体膜中的五种膜脂，即：MGDG、DGDG、PG、SQDG、PC，但PSI颗粒的MGDG含量比类囊体膜高，而DGDG含量较类囊体低。PSI颗粒和类囊体膜的脂肪酸组成也有差异。 3. 运用光谱学手段，研究两种基因型小麦PSI颗粒光破坏过程的异同。发现在经过强光破坏后，两种小麦PSI颗粒都发生叶绿素漂白现象，在各种状态叶绿素中，683nm状态的Chl a对强光最为敏感，受到光破坏的程度最大，而649nm Chl b和667nm Chl a分子变化较小。结合吸收光谱和低温荧光光谱我们提出了PSI中可能存在的能量传递途径。比较两种小麦PSI颗粒光破坏在低温荧光光谱上的不同，我们初步认为，小偃54可能通过将能量较多地分配给予长波长Chl而一定程度的避免过多能量向P700反应中心传递，从而起到对P700的保护作用。 4. 研究了不同表面活性剂SDS和Triton X-100对PSI颗粒色素结合状态和能量传递的影响。发现表面活性剂对色素状态和PSI中的能量传递都有很大的影响。并且Triton X-100的作用较SDS强烈。紫外荧光显示PSI蛋白结构也发生了显著变化。

Water solubility enhancement of phthalates by cetyltrimethylammonium bromide and beta-cyclodextrin

Water solubility enhancements of six phthalates (five aliphatic phthalates and one phenyl phthalate) by cetyltrimethylammonium bromide (CTAB) and beta-cyclodextrin (beta-CD) were studied at 25 degreesC. The solubilities of these plithalates are remarkably enhanced by CTAB solutions above the critical micelle concentration (cmc). Only marginal enhancement of phthalate solubility was observed in solutions containing CTAB below its cmc and beta-CD at low concentrations (less than 5 mM). The solubility enhancements of the plithalates are proportional to the added amount of CTAB and beta-CD. Partition coefficients of the plithalates between monomeric CTAB surfactant and water (K-MN) and between CTAB micelle and water K-MC) were estimated from the experimental data. The mechanisms of solubility enhancements by CTAB and beta-CD were discussed. A log-linear equation was proposed and evaluated for the solubilization by CTAB below cmc, while the previously proposed linear partitioning model was questioned. The structures of the complexes formed between plithalates and beta-CD were proposed, and the formation constants were estimated. The values of log K-MC, log K-MN, and log Kbeta-CD of the plithalates were found to correlate linearly with the log K-OW of plithalates, with the exception of the solid phenyl phthalate.

Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation

The intrinsic large electronegativity of O 2p character of the valence-band maximum (VBM) of ZnO renders it extremely difficult to be doped p type. We show from density functional calculation that such VBM characteristic can be altered by compensated donor-acceptor pairs, thus improve the p-type dopability. By incorporating (Ti+C) or (Zr+C) into ZnO simultaneously, a fully occupied impurity band that has the C 2p character is created above the VBM of host ZnO. Subsequent doping by N in ZnO: (Ti+C) and ZnO: (Zr+C) lead to the acceptor ionization energies of 0.18 and 0.13 eV, respectively, which is about 200 meV lower than it is in pure ZnO.

Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires

GaN nanowires have been grown with and without In as an additional source. The effects of In surfactant on the crystal quality and photoluminescence property of GaN nanowires are reported for the first time. X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and photoluminescence measurements are employed to analyse the products. The results show that introducing a certain amount of In surfactant during the growth process can improve the crystal quality of the GaN nanowires, and enhance the photolurainescence of them. In addition, the as-prepared GaN nanowires have the advantage of being easy to be separated, which will benefit the subsequent nanodevice fabrication.

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

The surfactant effect of isoelectronic indium doping during metalorganic chemical vapor deposition growth of cubic GaN on GaAs (1 0 0) substrates was studied. Its influence on the optical properties and surface morphology was investigated by using room-temperature photoluminescence (PL) and atomic force microscopy. It is shown that the sample with small amount of In-doping has a narrower PL linewidth, and a smoother surface than undoped cubic GaN layers. A slight red shift of the near-band-edge emission peak was observed. These results revealed that, for small TMIn flow rates, indium played the role of the surfactant doping and effectively improved the cubic GaN film quality; for large TMIn flow rates, the alloying formation of Ga1-xInxN might have occurred. (C) 2002 Elsevier Science B.V. All rights reserved.

Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

We observe "ghost" islands formed on terraces during homoepitaxial nucleation of GaN. We attribute the ghost islands to intermediate nucleation states, which can be driven into "normal" islands by scanning tunneling microscopy. The formation of ghost islands is related to excess Ga atoms on the surface. The excess Ga also affect island number density: by increasing Ga coverage, the island density first decreases, reaching a minimum at about 1 monolayer (ML) Ga and then increases rapidly for coverages above 1 ML. This nonmonotonic behavior points to a surfactant effect of the Ga atoms.