67 resultados para Photoelectron energy spectrum


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Multi-waves and multi-component get more and more attentions from oil industry. On the basis of existent research results, My research focuses on some key steps of OBC 4C datum processing. OBC datum must be preprocessed quite well for getting a good image. We show a flow chart of preprocess including attenuation of noise on multi-component datum、elimination ghost by summing P and Z and rotation of horizontal components. This is a good foundation for the coming steps about OBC processing. How to get exact converted point location and to analyze velocity are key points in processing reflection seismic converted wave data. This paper includes computing converted point location, analyzing velocity and nonhyperbolic moveout about converted waves. Anisotropic affects deeply the location of converted wave and the nonhyperbolic moveout. Supposed VTI, we research anisotropic effect on converted wave location and the moveout. Since Vp/Vs is important, we research the compute method of Vp/Vs from post-stack data and pre-stack data. It is a part of the paper that inversing anisotropic parameter by traveltime. Pre-stack time migration of converted wave is an focus, using common-offset Kirchhoff migration, we research the velocity model updating in anisotropic media. I have achieved the following results: 1) using continued Fractions, we proposed a new converted point approximate equation, when the offset is long enough ,the thomsen’s 2 order equation can’t approximate to the exact location of converted point, our equation is a good approximate for the exact location. 2) our new methods about scanning nonhyperbolic velocity and Vp/Vs can get a high quality energy spectrum. And the new moveout can fit the middle and long offset events. Processing the field data get a good result. 3) a new moveout equation, which have the same form as Alkhalifah’s long offset P wave moveout equation, have the same degree preciseness as thomsen’s moveout equation by testing model data. 4) using c as a function of the ratio offset to depth, we can uniform the Li’s and thomsen’s moveout equation in a same equation, the model test tell us choice the reasonable function C can improve the exact degree of Li’s and thomsen’s equation. 5) using traveltime inversion ,we can get anisotropic parameter, which can help to flat the large offset event and propose a model of anisotropic parameter which will useful for converted wave pre-stack time migration in anisotropic media. 6)using our pre-stack time migration method and flow, we can update the velocity model and anisotropic parameter model then get good image. Key words: OBC, Common converted Point (CCP), Nonhyperbolic moveout equation, Normal moveout correction, Velocity analysis, Anisotropic parameters inversion, Kirchhoff anisotropic pre-stack time migration, migration velocity model updating

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In modem signal Processing,non-linear,non-Gaussian and non-stable signals are usually the analyzed and Processed objects,especially non-stable signals. The convention always to analyze and Process non-stable signals are: short time Fourier transform,Wigner-Ville distribution,wavelet Transform and so on. But the above three algorithms are all based on Fourier Transform,so they all have the shortcoming of Fourier Analysis and cannot get rid of the localization of it. Hilbert-Huang Transform is a new non-stable signal processing technology,proposed by N. E. Huang in 1998. It is composed of Empirical Mode Decomposition (referred to as EMD) and Hilbert Spectral Analysis (referred to as HSA). After EMD Processing,any non-stable signal will be decomposed to a series of data sequences with different scales. Each sequence is called an Intrinsic Mode Function (referred to as IMF). And then the energy distribution plots of the original non-stable signal can be found by summing all the Hilbert spectrums of each IMF. In essence,this algorithm makes the non-stable signals become stable and decomposes the fluctuations and tendencies of different scales by degrees and at last describes the frequency components with instantaneous frequency and energy instead of the total frequency and energy in Fourier Spectral Analysis. In this case,the shortcoming of using many fake harmonic waves to describe non-linear and non-stable signals in Fourier Transform can be avoided. This Paper researches in the following parts: Firstly,This paper introduce the history and development of HHT,subsequently the characters and main issues of HHT. This paper briefly introduced the basic realization principles and algorithms of Hilbert-Huang transformation and confirms its validity by simulations. Secondly, This paper discuss on some shortcoming of HHT. By using FFT interpolation, we solve the problem of IMF instability and instantaneous frequency undulate which are caused by the insufficiency of sampling rate. As to the bound effect caused by the limitation of envelop algorithm of HHT, we use the wave characteristic matching method, and have good result. Thirdly, This paper do some deeply research on the application of HHT in electromagnetism signals processing. Based on the analysis of actual data examples, we discussed its application in electromagnetism signals processing and noise suppression. Using empirical mode decomposition method and multi-scale filter characteristics can effectively analyze the noise distribution of electromagnetism signal and suppress interference processing and information interpretability. It has been founded that selecting electromagnetism signal sessions using Hilbert time-frequency energy spectrum is helpful to improve signal quality and enhance the quality of data.

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The valence band structures of Al-N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al-N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al-N increased the relative quantity of Zn-N in ZnO:(Al, N), while N-N decreased that of Zn-N in ZnO:N. (c) 2006 American Institute of Physics.

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The relationship between the chemical displacement of the binding energy and the different chemical environment for 12 organic tin compounds was studied by means of X-ray photoelectron spectronscopy. The different substituents in the compounds have influence on the tin outer electron and Sn-O bond, which was discussed by Xray photoelectron spectroscopy and mass spectrum.

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Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset Delta E-V of SiO2/ZnO interface is determined to be 0.93 +/- 0.15 eV. According to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V Delta E-C=E-g(SiO2)-E-g(ZnO)-Delta E-V, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70 +/- 0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3204028]

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The effect of laser fields on the NO interaction potentials is obtained by the calculation of time-resolved photoelectron spectrum (TRPES) using the time-dependent wave-packet method. The calculation not only shows that the overlap of the pump-probe pulses makes some NO molecular "invisible" states visible, but also that the coupling strength and the positions of relevant curves change on increasing the laser intensity. These changed potentials affect their dynamical behavior and influence the shape and position of each peak in TRPES. That the coupling strength of relevant potentials can be changed by the field-matter interaction is consistent with our ab initio calculations.

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A theoretical method to calculate multidimensional Franck-Condon factors including Duschinsky effects is described and used to simulate the photoelectron spectrum of the anion SO. Geometry optimizations and harmonic vibrational frequency calculations have been performed on the XA(1) state of SO2 and (XB1)-B-2 state of SO2. Franck-Condon analyses and spectral simulation were carried out on the first photoelectron band of SO2. The theoretical spectra obtained by employing CCSD(T)/6-31 I+G(2d,p) values are in excellent agreement with the experiment. In addition, the equilibrium geometric parameters, r(c)(OS) = 0.1508 +/- 0.0005 nm and theta(e)(O-S-0) = 113.5 +/- 0.5 degrees, of the (XB1)-B-2 state of SO2, are derived by employing an iterative Franck-Condon analysis procedure in the spectral simulation. (c) 2005 Elsevier B.V. All rights reserved.

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Under optimized operating parameters, a hard and wear resistant ( Ti,Al)N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano-indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense and uniform and is mainly composed of ( Ti,Al)N and AlN hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about 1000 nm and mean hardness value of the film is about 26GPa. Under dry sliding wear test conditions, relative wear resistance of the ( Ti,Al)N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the ( Ti,Al)N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample.

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Strong laser-field-induced autoionisation in the presence of both photoionising and radiative decay of the autoionising state (AS) is investigated, focusing on the laser intensity dependence of the photoemission and photoelectron spectra. In contrast to previous predictions, power broadening and increasing reduction of the doublet peak heights with field strength are found in the photoemission spectrum. Similar effects leading to considerable suppression and even complete disappearance of the lowest-order peaks in the photoelectron spectrum, together with peak switching, are also demonstrated, which are closely related to above-threshold ionisation. In addition, it is suggested that the total number of energetic photoelectrons may serve as an alternative to measuring the atomic parameters of the AS. All these effects are attributed to the presence of the strong `probe': laser-induced decay of the AS.

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The photoelectron angular distributions (PADs) from above-threshold ionization of atoms irradiated by one-cycle laser pulses satisfy a scaling law. The scaling law denotes that the main features of the PADs are determined by four dimensionless parameters: (1) the ponderomotive number u(p) = U-p/hw, the ponderomotive energy U-p in units of laser photon energy; (2) the binding number E-b = E-b/h(w), the atomic binding energy E-b in units of laser photon energy; (3) the number of absorbed photons q; (4) the carrier-envelope phase phi(0), the phase of the carrier wave with respect to the envelope. We verify the scaling law by theoretical analysis and numerical calculation, compared to that in long-pulse case. A possible experimental test to verify the scaling law is suggested.

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In a recent experimental work on the excess photon detachment (EPD) of H- ions [Phys. Rev. Lett. 87 (2001) 243001] it has been found that the ponderomotive shift of each EPD peak increases with the order of the EPD channel. By using a nonperturbative quantum scattering theory, we obtain the kinetic energy spectra for the differential detachment rate along the laser polarization for several laser intensities. It is demonstrated that higher order EPD peaks are produced mainly at relatively higher laser intensities. By calculating the overall EPD spectra with varying laser intensities, it is found that the ponderomotive shift of each EPD peak increases with the order of the EPD channel. Our calculations are in good agreement with the experimental observation. It is found that different EPD channels occur mainly when the laser field reaches some values, thus the intensity distribution of the laser field is responsible for the varying ponderomotive shifts.

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We investigate theoretically the magnetic levels and optical properties of zigzag- and armchair-edged hexagonal graphene quantum dots (GQDs) utilizing the tight-binding method. A bound edge state at zero energy appears for the zigzag GQDs in the absence of a magnetic field. The magnetic levels of GQDs exhibit a Hofstadter-butterfly spectrum and approach the Landau levels of two-dimensional graphene as the magnetic field increases. The optical properties are tuned by the size, the type of the edge, and the external magnetic field.

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The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the "intrinsic" valence band offset.

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MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.