葡萄果皮花色苷构成特点、遗传规律及其在果实成熟过程中的变化

通过利用高效液相色谱-质谱联用技术，研究110 个不同基因型（包括3 个种和5 个种间杂种）葡萄品种的花色苷含量和成分特点。在所有品种中，最多鉴定出29 种花色苷。对葡萄的花色苷总量来说，一般情况下，欧亚种和欧美杂交种的花色苷含量较低，而野生种和砧木品种显著高于其它的种间杂种；在同一个种内，酿酒品种高于鲜食品种；在大多数高花色苷含量的种质中，二甲基花翠素类花色苷是主要的花色苷，而在低总花色苷量的品种，花青素类和花翠素类花色苷是主要的成分。此外，在欧亚种葡萄中，仅检测到单糖苷类花色苷，而在其它葡萄种质中，既有单糖苷花色苷又有双糖苷花色苷。在欧亚鲜食葡萄中，Pn-3-glucoside 是主要的花色苷，而在欧亚酿酒葡萄中，Mv-3-glucoside 是主要的花色苷。通过主成分分析，最终根据花色苷总量的不同和单、双糖苷含量的不同，110 个品种在散点图中被明显的分成3 部分。 通过连续两年调查3 个欧亚鲜食葡萄杂交组合的亲本和后代的花色苷含量来分析花色苷的遗传特点。共鉴定出16 种花色苷，且均为单糖苷类。母本中各花色苷的比例决定了后代中花色苷含量的比例，但是后代中花色苷的绝对含量不受亲本影响。不论亲本还是后代中，Peonidin 3-O-glucoside 和Malvidin3-O-glucoside 都是含量最高的花色苷。花色苷的有或无是寡基因控制的质量性状，而含量的多少是多基因控制的数量性状。通过主成分分析可以得知：在杂交后代中， peonidin 3-O-glucoside, malvidin 3-O-glucoside, delphinidin3-O-glucoside, cyanidin 3-O-glucoside, petunidin 3-O-glucoside, peonidin3-O-(6-O-coumaryl)-glucoside 和malvidin 3-O-(6-O-coumaryl)-glucoside 是影响果皮中花色苷总量的主要种类。花色苷的含量是一种高广义遗传力的性状，而且这种性状在两年间是稳定的（0.65-0.98）。 5 个不同基因型葡萄品种在成熟过程中果实品质的变化也被研究。始熟期开始后，果粒重量继续增加，果粒较大的鲜食品种增长很慢，而果粒较小的制汁和酿酒品种增长幅度很大；果实内两种主要的糖（葡萄糖和果糖）开始快速上升，且在整个成熟过程中保持1：1；有机酸的含量开始快速下降，苹果酸下降的幅度大于酒石酸。多酚物质在果实始熟期也发生巨大变化，花色苷快速积累。 ‘北紫’和‘梅鹿辄’中的花色苷在成熟前1-2 周达到最大值，‘黑奥林’、‘康可’和‘北醇’在整个成熟过程中花色苷一直增加；对非花色苷类多酚来说，‘黑奥林’和‘梅鹿辄’在果实成熟过程中一直增加，而在另3 个品种中是下降的；花色苷之间以及与黄酮醇之间成正相关，花色苷和酚酸成负相关关系，酚酸和黄酮醇也成负相关关系，黄烷醇物质之间以及与其它类黄酮物质之间成负相关关系。

莱茵衣藻生长和光合作用对硝基苯的响应

初步研究了不同浓度硝基苯对莱茵衣藻(Chlamydomonas reinhardtii)生长和光合作用的影响.结果表明:不同浓度的硝基苯对莱茵衣藻的生长和光合生理有明显抑制作用,主要表现在其明显降低光合色素的含量、光能转换效率(Fv/Fm)、电子传递速率(ETR)、净光合速率(Pn)等方面;硝基苯对莱茵衣藻的影响主要是通过影响光合色素合成,降低光合作用电子传递,从而降低藻类的光合作用,引起生长的抑制.

低pH对草鱼血液酸碱平衡的影响

研究了低pH(6.0—4.0)对草鱼血液酸碱平衡、p_(o2)及p_(co2)的影响,结果表明,低pH引起草鱼严重的酸血症.亚致死pH(6.0—5.0)时,血液酸碱平衡的影响主要表现为碱贮备[HCO_3]的丧失,血液pH的明显下降经机体缓冲调节可趋于稳定.致死低pH(4.0)时,血液pN和[HCO_3]下降均非常显著,并在96h内随酸化时间延长而日趋严重.仅在pH≤4.0的酸水中草鱼存在低氧症影响问题.草鱼是一种酸敏感性鱼类,为确保成鱼在天然水体的生存和繁育,水质pH至少应维持在6.0以上.

QE and Suns-V-oc study on the epitaxial CSiTF solar cells

In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-V-oc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The results show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I-02 (the dark saturation current of space charge region) values and too low R-sh (parallel resistance) values. The higher 102 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower R-sh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.

Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition

Boron-doped ( B-doped) silicon nanowires have been successfully synthesized by plasma-enhanced chemical vapor deposition (PECVD) at 440degreesC using silane as the Si source, diborane( B2H6) as the dopant gas and An as the catalyst. It is desirable to extend this technique to the growth of silicon nanowire pn junctions because PECVD enables immense chemical reactivity.

Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

In this paper, we use a pulsed rapid thermal processing (RTP) approach to create an emitter layer of hetero-junction solar cell. The process parameters and crystallization behaviour are studied. The structural, optical and electric properties of the crystallized films are also investigated. Both the depth of PN junction and the conductivity of the emitter layer increase with the number of RTP pulses increasing. Simulation results show that efficiencies of such solar cells can exceed 15% with a lower interface recombination rate, but the highest efficiency is 11.65% in our experiments.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator

A surface-region-purification-induced p-n junction, a puzzle discovered at Brookhaven National Laboratory, in a silicon-on-defect-layer (SODL) material has been explored by carrying out various annealing conditions and subsequent measurements on electrical properties. The origin of the pn junction has been experimentally investigated. Furthermore, the p-n junction has been transformed into a p-i-n electrical structure by adding a high temperature annealing process to the previously used SODL procedure, making the SODL material approach silicon on insulator (SOI). The control of the initial oxygen amount in the silicon material is suggested to be critical for the experimental results.

Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si

Proton-implanted and annealed p-type Si wafers were investigated by using both transmission electron microscopy and spreading resistivity probe. The novel pn junction [Li et al., Mat. Res. Sec. Symp, Proc. 396 (1996) 745], as obtained by using n-type Si subjected to the process as this work, was not observed in the p-type Si wafers in this work. A drop of superficial resistivity in the sample was found and is explained by the proposed models interpreting the novel pn junction. (C) 2000 Elsevier Science B.V. All rights reserved.

半导体辐射探测器

本书全面讲解了半导体辐射探测器的工作原理、器件结构、信号读出电子学、器件稳定性用辐射加固等内容。全书共分12章，内容包括：半导体物理、基本半导体结构、能量及辐射水平测量的探测器、位置及能量测量的探测器、探测器及其电子电路的集成、带有本征放大的探测器、探测器工艺、器件稳定性及加固、器件模拟等。 本书适合于半导体器件专业的科技人员及应用半导体辐射探测器的工程技术人员阅读，也可供相应专业的大学生及研究生作为教学参考书。

Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

面向实时应用的时态数据库系统体系结构

提出了面向实时应用的时态数据库系统Agilor-TDB,详细介绍了系统的体系结构。针对实时应用,实现了实时任务调度。在数据存储方面介绍了基于时间区间的多级文件索引结构和高效的内存数据管理机制;在数据查询方面提出了高速查询缓存优化策略。此外,用PN模型对系统并发控制进行了详细描述。

大气NH_3升高对不同供氮水平下小麦叶片光合生理特征的影响

以小麦品种‘小偃6号’(氮高效品种)和‘长旱58’(氮低效品种)为材料,采用开顶式气室和土培实验研究了大气NH3浓度升高对生长于高、低两种供氮介质下小麦植株不同生育期叶片净光合速率(Pn)、气孔导度(Gs)、叶绿素含量、叶绿素荧光参数(Fv/Fm、Fv/F0)和可溶性糖含量的影响。结果显示:两小麦品种高氨低氮处理植株的Pn、Fv/F0和可溶性糖含量均高于高氨高氮和低氨低氮处理,并在生育后期差异达显著水平(P<0.05),氮低效品种的Gs也符合上述规律且不同处理间差异显著(P<0.05);小麦各生育期高氨高氮处理下植株的Pn均显著低于低氨高氮处理,且两处理间灌浆期的叶绿素含量和灌浆期以前的可溶性糖含量的差异显著(P<0.05),而两处理灌浆期以前的叶绿素荧光参数Fv/Fm在各处理条件下均无显著差异;不同处理间及品种间各项光合特征指标差异缺乏规律性。可见,大气中NH3浓度升高有利于改善低供氮介质条件下小麦植株的氮营养状况,但不同氮效率品种间的响应存在差异。

黄土旱塬冬小麦水分利用效率及相关生理特性研究

采用Li-6400便携式光合测定系统在模拟光照条件下,通过对冬小麦叶片生理指标及其相应环境因子的测定,研究了小麦的生理指标和叶片水分利用效率的动态变化规律及其对环境因子的响应。结果表明:净光合速率日变化呈不明显的双峰曲线,蒸腾速率日变化呈明显的倒"U"型曲线,且不同生育期两者峰值出现的时间不同。拔节期环境因子对生理指标的影响要比灌浆期明显的多。光合有效辐射和CO2浓度是对净光合速率和叶片蒸腾速率影响最强烈的环境因子。在小麦整个生长过程中,温湿度对气孔导度的影响在逐渐增大,对胞间CO2浓度的影响也比较明显。小麦叶片水分利用效率的日变化呈不明显的双峰曲线,其峰值出现的时间早于净光合速率和蒸腾速率峰值出现的时间。灌浆期日平均WUE比拔节期低30.5%。小麦净光合速率、蒸腾速率和气孔导度三者之间极显著相关,叶片温度与气孔导度显著负相关。

长期水分胁迫下氮、钾对夏玉米叶片光合特性的影响

采用2种不同夏玉米基因型(陕单9号,抗旱品种;陕单911,不抗旱品种)的盆栽试验,研究了长期水分胁迫下氮、钾对各生育期叶片净光合速率、蒸腾速率、胞间二氧化碳浓度和叶绿素含量的影响,旨在从光合生理特性揭示这些因子的抗旱机理。结果表明,长期水分胁迫下叶片净光合速率,蒸腾速率、胞间二氧化碳浓度(除成熟期)和叶绿素含量显著降低,不抗旱品种降幅更甚。抗旱品种的净光合速率和叶绿素含量大于不抗旱品种,而蒸腾速率和胞间二氧化碳浓度则相反。两品种苗期光合作用较弱,净光合速率和叶绿素含量均较低,抽雄期达到高峰。施氮能不同程度降低水分胁迫下玉米叶片的蒸腾速率,增加叶绿素含量.提高净光合速率,从而减缓水分胁迫对光合作用的伤害。随氮肥用量增加,不抗旱品种净光合速率和叶绿素含量显著升高,蒸腾速率和胞间二氧化碳浓度明显降低,两种氮肥用量间有显著差异;抗旱品种在低氮用量时效果显著,但高低氮用量间无显著区别。钾对受水分胁迫的玉米表现出比氮肥更突出的效果。相反,在适量供水条件下,氮、钾肥的作用明显下降。以上结果表明,适当用量的氮、钾肥可以有效地改善水分胁迫下作物叶片的光合特性,从而增强作物的抗旱性。