122 resultados para Optical character recognition devices.


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A visual pattern recognition network and its training algorithm are proposed. The network constructed of a one-layer morphology network and a two-layer modified Hamming net. This visual network can implement invariant pattern recognition with respect to image translation and size projection. After supervised learning takes place, the visual network extracts image features and classifies patterns much the same as living beings do. Moreover we set up its optoelectronic architecture for real-time pattern recognition. (C) 1996 Optical Society of America

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An ordered gray-scale erosion is suggested according to the definition of hit-miss transform. Instead of using three operations, two images, and two structuring elements, the developed operation requires only one operation and one structuring element, but with three gray-scale levels. Therefore, a union of the ordered gray-scale erosions with different structuring elements can constitute a simple image algebra to program any combined image processing function. An optical parallel ordered gray-scale erosion processor is developed based on the incoherent correlation in a single channel. Experimental results are also given for an edge detection and a pattern recognition. (C) 1998 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(98)00306-7].

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Ultrafast temporal pattern generation and recognition with femtosecond laser technology is presented, analyzed, and experimentally implemented. Ultrafast temporal pattern generation and recognition are realized by taking advantage of two well-known techniques: the space-time conversion technique and the ultrafast pulse measurement technique. Here the temporal pattern for the designed multiple pulses, optimized with a preassumed Gaussian spectral distribution of an ultrashort pulse, is described. With the simulation of a Gaussian spectral distribution, we realize that the uniformity of the generated multiple ultrafast temporal pulses is relevant to the repeated number of modulation periods in the mask in the spectral plane. Moreover, the change of Gaussian spectral phases with the wavelengths in the modulated phase plate is considered. Experiments of ultrafast temporal pattern recognition by the frequency-resolved optical gating (FROG) characterization technique are also given. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

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在用大口径、长焦距平行光管模拟激光远场特性时,其光组透镜在重力作用下的变形不能忽略,为了分析对出射光束质量的影响,采用有限元分析软件“ANSYS”建立了平行光管光组中声400mm平凸透镜的有限元模型,给出一种分析透镜轴向变形引起的波像差的方法,在不同工况下,计算了平凸透镜在重力作用下轴向变形的峰谷值和均方根值,对轴向变形量均方根值最小工况画出了透镜表面变形的等值线图,计算了声350mm通光口径内的波像差峰谷值和均方根值,对平行光管光组的波像差做出估计,验证了设计的合理性。

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We have investigated the basic properties of subwavelength-diameter hollow optical fiber with exact solutions of Maxwell's equations. The characteristics of modal field and waveguide dispersion have been studied. It shows that the subwavelength-diameter hollow optical fibers have interesting properties, such as enhanced evanescent field, local enhanced intensity in the hollow core and large waveguide dispersion that are very promising for many miniaturized high performance and novel photonic devices. (C) 2007 Optical Society of America.

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Fields in subwavelength-diameter terahertz hollow optical fiber (STHOF) can be intensified by large discontinuity of the electric field at high index contrast interfaces. The influences of fiber geometry and refractive index of the dielectric region on the fiber characteristics, such as power distribution, enhancement factor, have been discussed in detail. By appropriate design, the intensity in the central region of STHOF may be enhanced by a factor of greater than 1.5 compared with subwavelength-diameter terahertz fiber without the central hole and the loss can be reduced. For its compact structure and simple fabrication process, the fiber may be very useful in many miniaturized high performance and novel terahertz photonic devices. (c) 2007 Elsevier B.V. All rights reserved.

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We report on an optical interference method for transferring periodic microstructures of metal film from a supporting substrate to a receiving substrate by means of five-beam interference of femtosecond laser pulses. Scanning electron microscopy and optical microscopy revealed microstructures with micrometer-order were transferred to the receiving substrate. In the meanwhile, a negative copy of the transferred structures was induced in the metal film on the supporting substrate. The diffraction characteristics of the transferred structures were also evaluated. The present technique allows one-step realization of functional optoelectronic devices. (C) 2005 Optical Society of America.

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The origin, character, analysis and treatment of subsurface damage (SSD) were summarized in this paper. SSD, which was introduced to substrates by manufacture processes, may bring about the decrease of laser-induced damage threshold (LIDT) of substrates and thin films. Nondestructive evaluation (NDE) methods for the measurement of SSD were used extensively because of their conveniences and reliabilities. The principle, experimental setup and some other technological details were given for total internal reflection microscopy (TIRM), high-frequency scanning acoustic microscopy (HFSAM) and laser-modulated scattering (LMS). However, the spatial resolution, probing depth and theoretic models of these NDE methods demanded further studies. Furthermore, effective surface treatments for minimizing or eliminating SSD were also presented in this paper. Both advantages and disadvantages of ion beam etching (IBE) and magnetorheological finishing (MRF) were discussed. Finally, the key problems and research directions of SSD were summarized. (c) 2005 Elsevier GmbH. All rights reserved.

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Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.

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From the effective absorption coefficient of bonded interface and the relationship of interface to reflectivity at cavity mode for double bonded vertical cavity laser, it can be seen that bonded interfaces should be positioned at the null of standing wave distribution, and the thickness of interface should be less than 20 nm. Using the finite elements method, the temperature contour map of laser can be calculated. Results showed that the influence of thin interface to thermal characteristics of VCSELS is slight, while thick interface will lead to temperature increase of active region. SEM images demonstrate that hydrophobic bonding is suitable for the fabrication of the device, while hydrophilic bonding interface is unfavorable to optical and thermal properties of devices with interface thickness larger than 40 nm.

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Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

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Undoped and Al-, Ga-, and In-doped Bi4Ti3O12 thin films were prepared on fused quartz substrates by chemical solution deposition. Their microstructures and optical properties were investigated by x-ray diffraction and UV-visible-NIR spectrophotometer, respectively. The optical band-gap energies, Urbach energies, and linear refractive indices of all the films are derived from the transmittance spectrum. Following the single oscillator model, the dispersion parameters such as the average oscillator energy (E-0) and dispersion energy (E-d) are achieved. The energy band gap and refractive indices are found to decrease with introducing the dopants of Al, Ga, and In, which is useful for the band-gap engineering and optical waveguide devices. The refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity (beta) decreases in all the films compared with those of bulk. It is supposed to be caused by the nanosize grains in films. (c) 2009 American Institute of Physics. [DOI 10.1063/1.3138813]

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Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the transition energies and optical properties in the R-plane ([1012]-oriented plane) GaN. The results show that (1) the transition energies decrease with the biaxial strains changing from -0.5 to 0.5%; and (2) giant optical anisotropy appears in the R-plane which is significantly affected by the biaxial strains. We clarify the relation between the strains and the polarization properties. Finally, we discuss the application of these properties to the R-plane GaN based devices. (c) 2009 The Japan Society of Applied Physics

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We designed and fabricated a four-channel reconfigurable optical add-drop multiplexer based on silicon photonic wire waveguide controlled through thermo-optic effect. The effective footprint of the device is about 1000 x 500 mu m(2). The minimum insertion loss is about 10.7 dB and the tuning bandwidth about 17 nm. The average tuning power efficiency is about 6.187 mW/nm and the tuning speed about 24.4 kHz. The thermo-optic polarization-rotation effect is firstly reported in this paper. (C) 2009 Optical Society of America

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We present fabrication and experimental measurement of a series of photonic crystal waveguides and coupled structure of PC waveguide and PC micro-cavity. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-holes single-line-defect waveguide. We fabricated these devices on a silicon-on-insulator substrate and characterized them using tunable laser source. We've obtained high-efficiency light propagation and broad flat spectrum response of photonic-crystal waveguides. A sharp attenuation at photonic crystal waveguide mode edge was observed for most structures. The edge of guided band is shifted about 31 nm with the 10 nm increase of lattice constant. Mode resonance was observed in coupled structure. Our experimental results indicate that the optical spectra of photonic crystal are very sensitive to structure parameters.