一种基于平板横向剪切干涉的角位移测量方法

在一种已有的角位移干涉测量技术的基础上,提出一种改进的角位移测量方法。通过选择合适的初始入射角,使从平板前后表面反射的两光束实现剪切干涉。采用一维位置探测器测量光束经透镜会聚后在探测器光敏面上的光点偏移量。根据干涉信号的相位和光点偏移量可以计算出被测物体的角位移。在该测量方案中,引入的一平面反射镜与被测物体的反射面形成光程差放大系统,提高了角位移测量灵敏度。分析了初始入射角对剪切比的影响,并讨论了基于该方案的角位移测量精度。实验结果表明,基于该技术的角位移重复测量精度达到10-8 rad数量级。

A high accuracy image sensor for sinusoidal phase-modulating interferometry

We proposed a high accuracy image sensor technique for sinusoidal phase-modulating interferometer in the field of the surface profile measurements. It solved the problem of the CCD's pixel offset of the same column under two adjacent rows, eliminated the spectral leakage, and reduced the influence of external interference to the measurement accuracy. We measured the surface profile of a glass plate, and its repeatability precision was less than 8 nm and its relative error was 1.15 %. The results show that it can be used to measure surface profile with high accuracy and strong anti-interference ability. (C) 2007 Elsevier GmbH. All rights reserved.

Inverse symmetric Dammann gratings

Inverse symmetric Dammann grating is a special grating, whose transition points are reflection symmetric about the midpoint with inverse phase offset in one period. It can produce even-numbered or odd-numbered array illumination when the phase modulations are pi or a specific value. Numerical solutions optimized by the steepest-descent algorithm for binary phase and multilevel phases with splitting ratio from I x 4 to 1 x 14 are given. Fabrication of 1 x 6 array without the zero-order intensity and 1 x 7 array with the zero-order intensity are made from the same amplitude mask. A 6 x 6 output without the crossed zero-orders was achieved by crossing two one-dimensional 1 x 6 inverse symmetric Dammann gratings. This grating may have potential value for practical applications. (C) 2008 Elsevier B.V. All rights reserved.

立方反射镜失调特性的研究

结合理想坐标系下立方镜镜面微小倾斜后其三个平面法线坐标，利用刚体微量转动的反射法线向量公式，获得非理想立方镜反射矩阵；为了研究在光斜入射时镜面倾斜对出射光方向的影响，利用立方镜绕顶点旋转等效于光斜入射的方法，计算出光束夹角δ与单一镜面偏差角ε和立方镜旋转角θ之间的关系式；对于理想情况下的立方镜，利用几何光学可以证明出射光与入射光不但平行，而且过顶点作任意截面交于两光线所得的两个交点关于顶点对称，从而计算出立方镜绕顶点以外任意轴旋转造成出射光束相对原出射光的偏移量与旋转角关系式，理论计算值与实验数据吻合得很

三种不同后处理方式对ZrO_2薄膜性能的影响

采用有氧热处理、激光预处理和离子后处理三种方式对电子束蒸发(EBE)制备的单层ZrO_2薄膜进行了后处理,并分别对样品的光学性能和抗激光损伤阈值(LIDT)特性进行了研究。实验结果表明,热处理方式可以有效排除膜层内吸附的水气,弥补薄膜制备过程中的氧损失,使得光谱短移、吸收减小、损伤阈值增高;激光预处理过程可以在一定程度上减少缺陷、提高损伤阈值,但对膜层的光谱和吸收情况没有明显的改善作用;而离子后处理能够提高膜层的堆积密度、减少缺陷、降低吸收从而提高损伤阈值。由于三种方式处理机制不同,在实际应用中应根据膜层的性能选择合适的处理方式。

Elevated ability to compete for limited food resources by 'all-fish' growth hormone transgenic common carp Cyprinus carpio

Food consumption, number of movements and feeding hierarchy of juvenile transgenic common carp Cyprinus carpio and their size-matched non-transgenic conspecifics were measured under conditions of limited food supply. Transgenic fish exhibited 73 center dot 3% more movements as well as a higher feeding order, and consumed 1 center dot 86 times as many food pellets as their non-transgenic counterparts. After the 10 day experiment, transgenic C. carpio had still not realized their higher growth potential, which may be partly explained by the higher frequency of movements of transgenics and the 'sneaky' feeding strategy used by the non-transgenics. The results indicate that these transgenic fish possess an elevated ability to compete for limited food resources, which could be advantageous after an escape into the wild. It may be that other factors in the natural environment (i.e. predation risk and food distribution), however, would offset this advantage. Thus, these results need to be assessed with caution.

Why do Chinese alligators (Alligator sinensis) form bellowing choruses: A playback approach

Crocodilians are quite vocal relative to other reptile groups, and the alligators are among the most vocal of the crocodilians. The Chinese alligator, Alligator sinensis, is usually solitary but engages in bellowing choruses in certain waters during the mating season. This paper reports the organization of Chinese alligator's bellowing choruses based upon field observations and playback experiments. Alligators of both genders engaged in the choruses, remaining immobile throughout and inclining toward bellowing synchronously (i.e., starting and finishing at about the same time). The choruses lasted about 10 min with abrupt onset and offset. Moreover, playback experiments revealed that both male and female alligators responded equally to bellowing stimuli from the same and opposite sexes and that none of the tested alligators approached the loudspeaker in spite of playback of male or female stimuli. These suggest that Chinese alligators. may not bellow to compete for or attract mates during the choruses. Instead, when their ecological behaviors, namely, dispersed inhabitation, multi-copulation, restricted mating season, etc., are considered, we hypothesize that they may synchronize bellows to enhance group detectability for assembling individuals into certain waters for subsequent copulations. (C) 2009 Acoustical Society of America. [DOI: 10.1121/1.3203667]

First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al)

Using first-principles methods we have calculated electronic structures, optical properties, and hole conductivities of CuXO2 (X=Y, Sc, and Al). We show that the direct optical band gaps of CuYO2 and CuScO2 are approximately equal to their fundamental band gaps and the conduction bands of them are localized. The direct optical band gaps of CuXO2 (X=Y, Sc, and Al) are 3.3, 3.6, and 3.2 eV, respectively, which are consistent with experimental values of 3.5, 3.7, and 3.5 eV. We find that the hole mobility along long lattice c is higher than that along other directions through calculating effective masses of the three oxides. By analyzing band offset we find that CuScO2 has the highest valence band maximum (VBM) among CuXO2 (X=Y, Sc, and Al). In addition, the approximate transitivity of band offset suggests that CuScO2 has a higher VBM than CuGaO2 and CuInO2 [Phys. Rev. Lett. 88, 066405 (2002)]. We conclude that CuScO2 has a higher p-type doping ability in terms of the doping limit rule. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2991157]

Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94 +/- 0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.66 +/- 0.23 eV, and a type-II band alignment forms at the InN/GaAs heterojunction. (C) 2008 American Institute of Physics.

Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy

Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset Delta E-V of SiO2/ZnO interface is determined to be 0.93 +/- 0.15 eV. According to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V Delta E-C=E-g(SiO2)-E-g(ZnO)-Delta E-V, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70 +/- 0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3204028]

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the "intrinsic" valence band offset.

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.

The electronic structure of strained ZnO/MgxZn1-xO superlattices and the influence of polarization

Based on the effective-mass model, the lower energies of the electron and the hole of ZnO/MgxZn1-xO superlattices are calculated. Because of the mismatch of the lattice constant between the ZnO well and the MgxZn1-xO barrier, piezoelectric and spontaneous polarization exist in ZnO/MgxZn1-xO superlattices and a macroscopical internal electric held is found when well width L-w >4 nm and Mg concentration x > 0.2. The parameters of ZnO/MgxZn1-xO superlattices such as lattice constant, band offset, etc. are also proposed. Through calculations, we found the internal electric field can change the lowest energies of the electron and hole to 105.4 and 85.1 meV when well width L-w up to 70 angstrom, which will influence the electronic and optical properties of ZnO/MgxZn1-xO superlattices greatly, while the Rashba effect from the internal electric field is so small that it can be neglected. The ground state exciton energies with different Mg concentration x are also calculated by variational method, our results are very close to the experimental results when Mg concentration x <= 0.3. (C) 2008 Elsevier B.V. All rights reserved.

p-type doping of GaInNAs quaternary alloys

Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1-xInxN1-yAsy quaternary alloys. We show that the Mg-Ga substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing in composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices. (C) 2008 Published by Elsevier B.V.

Spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor quantum dots

We theoretically investigate the spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor (DMS) quantum dots (QD's) under the influence of both the external electric field and magnetic field using the recursion method. Our results show that (1) it can get a 100% polarized electric current by using suitable structure parameters; (2) for a fixed Cd1-xMnxTe DMS QD, the wider the system is, the more quickly the transmission coefficient increases; (3) for a fixed system length, the transmission peaks of the spin-up electrons move to lower Fermi energy with increasing Cd1-xMnxTe DMS QD radius, while the transmission of the spin-down electrons is almost unchanged; (4) the spin-polarized effect is slightly increased for larger magnetic fields; (5) the external static electric field moves the transmission peaks to higher or lower Fermi energy depending on the direction of the applied field; and (6) the spin-polarized effect decreases as the band offset increases. Our calculated results may be useful for the application of Cd1-xMnxTe DMS QD's to the spin-dependent microelectronic and optoelectronic devices.