应用雄性激素诱导异育银鲫性转化的研究

用丙酸睾丸素溶液浸泡行雌核发育的异育银鲫(Allogynogeneticcruciancarp)胚胎10～14天 ,诱导出了11.0 %～13.6 %的雄性鱼和10.5 %～27.3 %的兼性鱼。对50日龄的异育银鲫幼鱼投喂甲基睾丸素4个月 ,再继续饲养182～335天 ,诱导出了20 %以上的雄性鱼。此外 ,部分实验鱼两侧卵巢的大小出现明显差异。

武汉东湖短尾秀体溞的种群变动和生产量

测定浮游动物的生产量是水生态系统结构、功能和生物生产力研究中的一个重要环节,通过生产量的测算可客观地评价不同种群对系统作用的大小。短尾秀体溞在我国广为分布,但其生产量在我国尚未见报道,为此笔者测定研究了东湖麦秋季的优势枝角类——短尾秀体溞(Diaphanosoma brachyurum)的种群变化和生产量。在1983—1985年间,这种秀体搔在Ⅰ站的平均种群密度依次为7.67±12.39,11.15±20.58和10.14±11.19个/升;Ⅱ站则分别为7.36±11.07,7.37±16.16和9.69

武汉东湖沉积物和沉积物间隙水中氮和磷的含量及其分布

武汉东湖的沉积物中氮(N)的平均含量上层(0—10厘米)为14.2毫克/克(干重,下同),下层(10—40厘米)为12.0毫克/克。磷(P)的平均含量上层为0.87毫克/克,下层为0.62毫克/克。沉积物中氮和磷的含量均有明显的垂直和平面分布上的差异,上层高于下层,水果湖区高于其它湖区。沉积物间隙水中总溶解氮的浓度高,平均为11.52毫克/升,主要以氨氮的形态存在,占总溶解氮的61.3%。总溶解磷的浓度较低,平均为0.113毫克/升,其中正磷酸盐占55.8%。间隙水中氮和磷的浓度均有明显的季节变动,夏季和

混合堆肥养鱼苗成活率高成长快

<正> 我们知道,青、草、鲢、鳙、鲤、鲫等养殖鱼类,在鱼苗阶段一般都以浮游植物,浮游动物等活饲料为食料。两广地区采用"大草养鱼"的方法和湖南、江西等地区用大粪直接在池中泼洒的方法,在效

Population genetic structure of the parasitic nematode Camallanus cotti inferred from DNA sequences of ITS1 rDNA and the mitochondrial COI gene

The population genetic structure of fish parasitic nematode, Camallanus cotti, collected from the Yangtze River, Pearl River and Minjiang River in China was investigated. From these parasites, the similar to 730 bp of the first internal transcribed spacer of ribosomal DNA (ITS1 rDNA) and the 428 bp of mitochondrial cytochrome c oxidase subunit I (COI) gene were sequenced. For the ITS1 rDNA data set, highly significant Fst values and low rates of migration were detected between the Pearl River group and both the Yangtze River (Fst = 0.70, P < 0.00001; Nm = 0.21) and Minjiang River (Fst = 0.73, P < 0.00001; Nm = 0.18) groups, while low Fst value (Fst = 0.018, P > 0.05) and high rate of migration (Nm = 28.42) were found between the Minjiang and the Yangtze rivers. When different host/locality populations (subpopulations) within each river were considered, subpopulations between the Yangtze River and Minjiang River had low Fst values (<= 0.12) and high Nm values (>3.72), while Pearl River subpopulations were significantly different from the Yangtze River and Minjiang River subpopulations (Fst >= 0.59; Nm < 1). The COI gene data set revealed a similar genetic structure. Both phylogenetic analyses and a statistical parsimony network grouped the Pearl River haplotypes into one phylogroup, while the Yangtze River and Minjiang River haplotypes formed a second group. These results suggested that the Yangtze River and Minjiang River subpopulations constituted a single reproductive pool that was distinct from the Pearl River subpopulations. In addition, the present study did not find host-related genetic differentiation occurring in the same drainage. (C) 2009 Published by Elsevier B.V.

Nitrate and phosphate supplementation to increase toxin production by the marine dinoflagellate Alexandrium tamarense

Alexandrium tamarense toxins have great value in biotechnology research as well as important in connection with shellfish poisoning. The influence of nitrate or nitrate and phosphate supplementation on cell biomass and toxin content were investigated in batch cultures. When cultures at low nitrate (88.2 mu M NaNO3) Were supplemented with 793.8 mu M NaNO3 at day 10 the cell density and cellular toxin contents were increased by 6-29% and 20-76%, respectively, compared with controls, and maximal values were 43,600 cells/ml (day 38) and 0.91 pg/cell (day 31). Supplementation with nitrate at day 14 or with nitrate and phosphate at day 10/14 to the cultures did not increase the cell density compared with the non-supplemented middle nitrate or high phosphate (108 mu M NaH2PO4) cultures, respectively, but increased the cellular toxin contents by an average of 52%. The results showed that supplementation with nitrate or with nitrate and phosphate at different growth phases of the cultures increased toxin yield by an average of 46%. Supplementation with nitrate at selected times to maintain continuous low level of nitrate might contribute to the effective increase of toxin yield of A. tamarense. (c) 2005 Elsevier Ltd. All rights reserved.

Band-tail shape and transport near the metal-insulator transition in Si-doped

In the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown Si: Al0.3Ga0.7As, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si [1 x 10(19) cm(-3) for sample 1 (S1) and 9 x 10(17) cm(-3) for sample 2 (S2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). The metal-insulator transition for S1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band tail of the density of states in Al0.3Ga0.7As is found electrically through transport measurements. It is determined to have a power-law dependence, with an exponent of -1.25 for S1 and -1.38 for S2.

光纤周界安全管理系统及其模式识别方法

于AD批量导入至AEzhangdi

Structural properties of ne implanted GaN

We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 10(14) cm(-2) was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm(-1) for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice.

Effect of annealing on photoluminescence properties of neon implanted GaN

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10(14) to 9 x 10(15) cm(-2) and annealed isochronally at 800 and 900 degrees C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 degrees C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 degrees C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10(15) cm(-2). The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of VGaON complexes caused by high energy ion implantation.

Space-charge-limited currents in GaN Schottky diodes

Unusual dark current voltage (I-V) characteristics were observed in GaN Schottky diodes. I-V characteristics of the GaN Schottky diodes were measured down to the magnitude of 10(-14) A. Although these Schottky diodes were clearly rectifying, their I-V characteristics were non-ideal which can be judged from the non-linearity in the semi-logarithmic plots. Careful analysis of the forward bias I-V characteristics on log-log scale indicates space-charge-limited current (SCLC) conduction dominates the current transport in these GaN Schottky diodes. The concentration of the deep trapping centers was estimated to be higher than 10(15) cm(-3). In the deep level transient spectra (DLTS) measurements for the GaN Schottky diodes, deep defect levels around 0.20 eV below the bottom of the conduction band were identified, which may act as the trapping centers. The concentration of the deep centers obtained from the DLTS data is about 5 x 10(15) cm(-3). SCLC measurements may be used to probe the properties of deep levels in wide bandgap GaN-AlGaN compound semiconductors, as is the case with insulators in the presence of trapping centers. (c) 2005 Elsevier Ltd. All rights reserved.

X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices

Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-ray diffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to 300 meV a blueshift of the emission peak position and down to 16.6 meV a narrowing of the line width are found in the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order ones in the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffraction data. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is 1.8 x 10(-17) cm(2) (.) s(-1) at 650 degreesC, 3.2 x 10(-17) cm(2 .) s(-1) at 750 degreesC, and 1.2 x 10(-14) cm(2 .) s(-1) at 850 degreesC.

Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition

We have investigated the growth of GaN buffers by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) substrates. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to study the dependence of the nucleation on the growth temperature, growth rate, annealing effect, and growth time. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. The size and distribution of islands and the thickness of buffer layers have a crucial role on the quality of GaN layers. Based on the experimental results, a model was given to interpret the formation of hexagonal-phase GaN in the cubic-phase GaN layers. Using an optimum buffer layer, the strong near-band emission of cubic GaN with full-width at half maximum (FWHM) value as small as 5.6 nm was observed at room temperature. The background carrier concentration was estimated to be in the range of 10(13) similar to 10(14) cm(-3).

Photovoltaic effect of cubic GaN/GaAs(100)

We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He-Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 mu m for two undoped n-type cubic GaN samples with background concentrations of 10(14) and 10(18) cm(-3), respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)00450-7].

Electron irradiation and thermal annealing effect on GaAs solar cells

This paper describes the effect of electron irradiation and thermal annealing on LPE AlGaAs/GaAs heterojunction solar cells with various p/n junction depths. The electron irradiation experiments were performed with energy of 3 MeV, fluences ranging from 1 x 10(14) to 5 x 10(15) e/cm(2). The results obtained demonstrate that the irradiation-induced degradation of performances of the cells is mainly in the short circuit current and could be mostly recovered by annealing at 260 degrees C for 30 min. Four electron traps, E-c - 0.24 eV, E-c - 0.41 eV, E-c - 0.51 eV, E-c - 0.59 eV, were found by DLTS analysis, only two shallow levels of which could be removed by the annealing. (C) 1998 Elsevier Science B.V. All rights reserved.