Effects of pentylenetetrazol-induced brief convulsive seizures on spatial memory and fear memory

Previous Studies have demonstrated that in the pentylenetetrazol (PTZ) kindling model, recurrent seizures either impair or have no effect on learning and memory. However, the effects of brief seizures on learning and memory remain unknown. Here, we found

A new miniature species of the genus Triplophysa (Bahtoridae: Nemacheilinae) from Yunnan, China

During a re-examination of museum specimens of Triplophysa species, some specimens that had been collected from the Jialonghe River in Yunnan Province, China, in April 1975, were identified as a new species. Triplophysa parvus n. sp. can be distinguished

Phylogeography of Schizothorax o'connori (Cyprinidae: Schizothoracinae) in the Yarlung Tsangpo River, Tibet

Schizothorax o'connori is endemic to the Yarlung Tsangpo River on the Tibetan Plateau. We assessed the relative impacts of historical and contemporary factors in organizing genetic variation in S. o'connori populations using mitochondrial cytochrome b sequences. We analyzed 191 samples from 11 populations and identified 78 haplotypes. The phylogenetic analyses and analysis of molecular variance all supported the same conclusions of two well-differentiated east-west phylogroups, separated by the Tsangpo Great Gorge. The split between the two clades accounted for 58% of the genetic variance observed among the examined samples. Waterfalls as effective barriers played an important role in shaping the phylogeographical structure of this species. Analyses of migration rates revealed that upstream dispersal was limited crossing waterfalls. Our study revealed substantial spatial and temporal variation in the influence of landscape features on contemporary patterns of genetic structure in S. o'connori. Interglacial range expansions clearly left their mark on contemporary populations above the Tsangpo Great Gorge.

Extracellular phosphatases produced by phytoplankton and other sources in shallow eutrophic lakes (Wuhan, China): taxon-specific versus bulk activity

Extracellular phosphatases are an important part of the phosphorus cycle in aquatic environments. Phosphatase activity (PA) in plankton was studied in seven subtropical shallow lakes of different exploitation management and trophic status in the urban area of Wuhan City. Bulk PA was rather high (range 1.1-11 mu mol l(-1) h(-1)), although concentrations of soluble reactive phosphorus (SRP) were also high (range 27 mu g P l(-1) to similar to 1.5 mg P l(-1)) in all lakes. Cell-associated extracellular PA in phytoplankton was detected using the fluorescence-labelled enzyme activity technique. Phytoplankton species partly contributed to the bulk PA. We found explicit differences in the presence of cell-associated phosphatase within the main phytoplankton groups; species belonging to Chlorophyta and Dinophyta were regularly phosphatase-positive, while Cyanophyta and Bacillariophyceae were phosphatase-negative in all but one case. Furthermore, there is a certain potential of extracellular phosphatases produced by heterotrophic nanoflagellates in most of the lakes. This new finding compromises the 'traditional' interpretation of bulk phosphatase data as being due to overall phytoplankton or bacterial P regeneration.

FLUCTUATION OF SIZE-FRACTIONATED ALKALINE PHOSPHATASE AFTER BLOOM DISAPPEARANCE IN TWO SHALLOW PONDS

The temporal and vertical fluctuations of size fractionated alkaline phosphatase activity (APA) and kinetics parameters as well as orthophosphate (o-P) and chlorophyll concentrations were investigated after bloom disappearance in two shallow ponds A and B from 27 October 2001 to 15 April 2002. Pond A (Microcystis) bloomed seriously but pond B did not. The data of o-P and chlorophyll suggested that phosphorus was the principal limiting nutrimental element and its vertical flux should be regarded as an important driving factor for algal growth. In pond A, the accumulation of algae-derived detritus after bloom disappearance in overlying water stimulated excretion of algal fraction APA, mainly produced by attached bacteria responsible for detritus decomposition, whereas bacterial fraction APA preferred to function in surface water. Interestingly, completely contrary phenomena were observed in pond B. In season, even though no obvious difference for size-fractionated APA in both ponds, the total APA in pond A peaked earlier showing higher activity and efficiency (low K-m and high V-max values) as a result of algal-derived detritus input. In summary, it is suggested that the excretion of alkaline phosphatase with strongly catalyzing efficiency and high activity should be taken as important contributor to algal-derived detritus decomposition, further fueling nutrient recycle and accelerating algal development next year. Furthermore, some inhibitors and surfactants were testified to be good tools to identify the origin of dissolved alkaline phosphatase.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Dislocation scattering in AlxGa1-xN/GaN heterostructures

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of AlxGa1-xN/GaN heterostructures was calculated. Based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. It was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature.

Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ/cm(2). The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.

Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition

ZnMgO hexagonal-nanotowers/films grown on m-plane sapphire substrates were successfully synthesized using a vertical low-pressure metal organic chemical vapour deposition system. The structural and optical properties of the as-obtained products were characterized using various techniques. They were grown along the non-polar [1 0 (1) over bar 0] direction and possessed wurtzite structure. The ZnMgO hexagonal-nanotowers were about 200 nm in diameter at the bottom and 120 nm in length. Photoluminescence and Raman spectra show that the products have good crystal quality with few oxygen vacancies. With Mg incorporation, multiple-phonon scattering becomes weak and broad, and the intensities of all observed vibrational modes decrease. The ultraviolet near band edge emission shows a clear blueshift (as much as 100 meV) and broadening compared with that of pure ZnO products.

Geometric phase of a bipartite system with Dzyaloshinski-Moriya interaction

The Berry phase of a bipartite system described by a Heisenberg XXZ model driven by a one-site magnetic field is investigated. The effect of the Dzyaloshinski-Moriya (DM) anisotropic interaction on the Berry phase is discussed. It is found that the DM interaction affects the Berry phase monotonously. and can also cause sudden change of the Berry phase for some weak magnetic field cases. (c) 2008 Elsevier B.V. All rights reserved.

Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94 +/- 0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.66 +/- 0.23 eV, and a type-II band alignment forms at the InN/GaAs heterojunction. (C) 2008 American Institute of Physics.

Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO (111)/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 3.65 +/- 0.23 eV and the conduction band offset is deduced to be 0.92 +/- 0.23 eV, indicating that the heterojunction has a type- I band alignment. The accurate determination of the valence and conduction band offsets is important for the applications of MgO/SiC optoelectronic devices. (C) 2008 American Institute of Physics.

Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions

We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V.cm for a 3V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0V bias, due to free carrier absorption. (C) 2009 Optical Society of America

Optimal teleportation via thermal entangled states of a two-qubit Heisenberg chain

We study the optimal teleportation based on Bell measurements via the thermal states of a two-qubit Heisenberg XXX chain in the presence of the Dzyaloshinsky-Moriya (DM) anisotropic antisymmetric interaction and obtain an optimal unitary transformation. The explicit expressions of the output state and the teleportation fidelity are presented and compared with those of the standard protocol. It is shown that in this protocol the teleportation fidelity is always larger and the unit fidelity is achieved at zero temperature. The DM interaction can enhance the teleportation fidelity at finite temperatures, as opposed to the effect of the interaction in the standard protocol. Cases with other types of anisotropies are also discussed. Copyright (C) EPLA, 2009

Electron spin quantum beats and room temperature g factor in GaAsN

We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs1-xNx thin films is significantly changed by the introduction of a small nitrogen fraction.