An infrared study on Langmuir-Blodgett films of octadecylammonium octadecanoate: FWHM and the vibrational coupling

The monolayer of the mixture of octadecanoic acid and octadecylamine with molar ratio 1: 1 has been investigated at the air-water interface. It was found that the monolayer shows a rather stable state at the surface pressure of 30 mN/m and this monolayer can be transferred onto a CaF2 plate by Langmuir-Blodgett (LB) technique. The infrared spectra of LB films indicated that octadecyl ammonium octadecanoate is formed by an intermolecular proton exchange between adjacent carboxylic and aminic groups (COO- and NH3+). In three-layer LB film, the CH2 scissoring mode of the long hydrocarbon chains of octadecyl ammonium octadecanoate shows a broad band feature at about 1468 cm(-1) while this vibrational mode of three-layer LB film of the mixture (1: 1) of deuterated stearic acid and octadecylamine (octadecylammonium octadecanoate-d35, C18H37NH3+C17D35COO-) only shows a narrow band. The broad feature of the CH2 scissoring mode in octadecylammonium octadecanoate probably originates from the coupling between the chain of stearic acid and that of octadecylamine while this kind of coupling could be completely removed in octadecylammonium octadecanoate-d35.

Luminescent thin film of doped terbium complex obtained by sol-gel method

The transparent luminescent thin films of doped terbium complex were obtained by sol-gel method. The result indicates that rare earth carboxylates with poor solubility can be homogeneously doped into sol matrix in situ. The fluorescence spectra show that the thin film material emits the characteristic narrow band emission of Tb3+ under the UV excitation.

Organic electroluminescent devices using rare earth complex Eu(DBM)(3) as an emitter

Eu3+ narrow band emitting EL device with PPV, Alq(3) as hole and electron transportation layers has been prepared. The emitting layer, which consists of PVK, Eu(DBM)(3) and PBD is formed by spin-casting method. A maximum luminance of 52cd.m(-2) is achieved from the device.

LUMINESCENCE OF DY3+ ENHANCED BY SENSITIZATION

Four types of sensitized luminescence of Dy3+ are reported: (1) by a host having a broad-band spectrum as in Na3Y0.99Dy0.01(VO4)(2); (2) by a sensitizer having a broad-band spectrum as in Ca2B2O5:Dy3+, Bi3+; (3) by a sensitizer having a narrow-band spectrum as in Mg2Gd7.9Dy0.1(SiO4)(6)O-2; (4) by a sensitizer having a broad-band spectrum and energy migration as in Gd compounds such as Ca1.96Pb0.04Gd7.9Dy0.1(SiO4)(6)O-2. The luminescent intensity of Dy3+ can be enhanced in these ways.

黄骅坳陷港西开发区河流相储层构型与剩余油分布模式研究

In the production tail of oilfield, water-cut is very high in thick channel sand oil reservoir, but recovery efficiency is relative low, and recoverable remaining oil reserves is more abundant, so these reserves is potential target of additional development. The remaining oil generally distributed with accumulation in certain areas, controlled by the reservoir architecture that mainly is the lateral accretion shale beddings in the point bar, so the study of reservoir architecture and the remaining oil distribution patterns controlled by architecture are very significant. In this paper, taking the Minghuazhen formation of Gangxi oilfield as a case, using the method of hierarchy analysis, pattern fitting and multidimensional interaction, the architecture of the meandering river reservoir is precisely anatomized, and the remaining oil distribution patterns controlled by the different hierarchy architecture are summarized, which will help to guide the additional development of oil fields. Not only is the study significant to the remaining oil forecasting, but also it is important for the theory development of reservoir geology. With the knowledge of sequence correlation and fluvial correlation model, taking many factors into account, such as combination of well and seismic data, hierarchical controlling, sedimentary facies restraint, performance verification and 3-D closure, an accurate sequence frame of the study area was established. On the basis of high-resolution stratigraphic correlation, single layer and oil sand body are correlated within this frame, and four architecture hierarchies, composite channel, single channels, point bars and lateral accretion sandbody are identified, The result indicates that Minghuazhen Formation of Gangxi oilfield are dominated by meandering river deposition, including two types of channel sandbodies, narrow band and wide band channel sandbody, and each of them has different characteristics of facies variation laterally. Based on the identification of composite channel, according to the spatial combination patterns and identified signs of single channel, combined with channel sandbody distribution and tracer material data, single channel sandbodies are identified. According to empirical formula, point-bar scales of the study area are predicted, and three identification signs are summarized, that is, positive rhythm in depositional sequence, the maximum thick sand and near close to the abandoned channel, and point bars are identified. On the basis of point bar recognition, quantitative architecture models inner point bar are ascertained, taking the lateral accretion sand body and lateral accretion shale beddings in single well as foundation, and quantitative architecture models inner point bar as guidance, and result of tracer material data as controlling, the the lateral accretion sand body and lateral accretion shale beddings are forecasted interwell, so inner architecture of point bar is anatomied. 3-D structural model, 3-D facies model and 3-D petrophysical properties models are set up, spatial distribution characteristics of sedimentary facies and petrophysical properties is reappeared. On the basis of reservoir architecture analysis and performance production data, remaining oil distribution patterns controlled by different hierarchy architecture units, stacked channel, single channel and inner architecture of point bar, are summarized, which will help to guide the additional development of oil fields.

Ultra-narrow bandwidth resonant reflection grating filters using the second diffracted orders

In this paper, we design resonant reflection grating filters employing the second diffracted orders as the leaky modes, then analyze the bandwidth of the reflection peak and the electric field distributions inside the wavegude under resonance. The numeric calculation confirms that ultra-narrow resonant reflection peaks can be observed in these structures. At the same time, strong electric field enhancement appears under resonance. It provides a new approach to diversify the resonant reflection filters and may open a new way to the realization of ultra-narrow bandwidth filters. (C) 2008 Elsevier B.V. All rights reserved.

A novel ultra-narrow transmission-band fiber Bragg grating and its application in a single-longitudinal-mode fiber laser with improved efficiency

A novel design approach to ultra-narrow transmission-band fiber Bragg grating (FBG) is proposed and demonstrated for the first time. The new grating consists of multiple identical distributed-Bragg reflector (DBR) cavities and a it-phase-shifted gap, and hence, the proposed laser is constructed by the cascade of these identical DBR fiber lasers. By manufacturing the proposed grating in a piece of Er-Yb codoped fiber, a single-wavelength single-longitudinal-mode (SLM) fiber laser with improved efficiency is demonstrated experimentally. The experimental results show that the pump-to-signal conversion efficiency of the proposed laser is improved by a factor of two in comparison with the optimized distributed-feedback (DFB) fiber lasers. (c) 2007 Elsevier B.V. All rights reserved.

Electric field enhancement in guided-mode resonance filters

Electric fields inside guided-mode resonance filters (GMRFs) may be intensified by resonance effects. The electric field enhancement is investigated in two GMRFs: one is resonant at normal incidence, the other at oblique incidence. It is shown that the two GMRFs exhibit different behaviors in their electric enhancement. Differences between the electric field distributions of the two GMRFs arise because coupling between counter-propagating modes occurs in the first case. It is also shown that the order of the electric field of maximum amplitude can be controlled by modulation of the dielectric constant of the grating. (c) 2006 Optical Society of America.

Electric field distribution in resonant reflection filters under normal incidence

Electric field distributions inside resonant reflection filters constructed using planar periodic waveguides are investigated in this paper. The electric fields may be intensified by resonance effects. Although the resonant reflection peaks can be quite narrow using weakly modulated planar periodic waveguides, the strong electric field enhancement limits their use in high-power laser systems. Strongly modulated waveguides may be used to reduce the electric field enhancement and a cover layer may be used to narrow the bandwidth at the same time. Desired results (i.e. almost no electric field enhancement together with narrow bandwidth) can be realized using this simple structure.

Compensation of reflectance response deviations of guided-mode resonant filters induced by overetching fabrication

Unless the fabrication error control is well treated, it easily causes overetched fabrication errors, which causes the resonant peak value deviation during the fabrication process of guided-mode resonant filters (GMRFs). Hence, the fabrication error control becomes a key point for improving the performance of GMRF. We find that, within the range of the groove depth from 93 to 105 nm, the relationship between the overetched error and the resonant peak value deviation is nearly linear, which means that we can compensate the reflectance response deviation and reduce the resonant peak value deviation by the method of covering the layer film on the GMRF. Simulation results show that the deviation is compensated perfectly by this way. (C) 2008 Optical Society of America

Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures

We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2DEG) and quantum spin Hall (QSH) bar in a HgTe/CdTe quantum well with inverted band structures. For the 2DEG, the transmission shows the Fabry-Perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. For the QSH bar, the transmission gap is reduced to the edge gap caused by the finite size effect. Instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. Such a Fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.

Design of Narrow-Gap TiO2: A Passivated Codoping Approach for Enhanced Photoelectrochemical Activity

To improve the photoelectrochemical activity of TiO2 for hydrogen production through water splitting, the band edges of TiO2 should be tailored to match with visible light absorption and the hydrogen or oxygen production levels. By analyzing the band structure of TiO2 and the chemical potentials of the dopants, we propose that the band edges of TiO2 can be modified by passivated codopants such as (Mo+C) to shift the valence band edge up significantly, while leaving the conduction band edge almost unchanged, thus satisfying the stringent requirements. The design principle for the band-edge modification should be applicable to other wide-band-gap semiconductors.

Electronic structure and g factors of narrow-gap zinc-blende nanowires and nanorods

The Hamiltonian in the framework of eight-band effective-mass approximation of the zinc-blende nanowires and nanorods in the presence of external homogeneous magnetic field is given in the cylindrical coordinate. The electronic structure, optical properties, magnetic energy levels, and g factors of the nanowires and nanorods are calculated. It is found that the electron states consist of many hole-state components, due to the coupling of the conduction band and valence band. For the normal bands which are monotone functions of |k(z)|, long nanorods can be modeled by the nanowires, the energy levels of the nanorods approximately equal the values of the energy band E(k(z)) of the nanowires with the same radius at a special k(z), where k(z) is the wave vector in the wire direction. Due to the coupling of the states, some of the hole energy bands of the nanowires have their highest points at k(z)=0. Especially, the highest hole state of the InSb nanowires is not at the k(z)=0 point. It is an indirect band gap. For these abnormal bands, nanorods can not be modeled by the nanowires. The energy levels of the nanorods show an interesting plait-like pattern. The linear polarization factor is zero, when the aspect ratio L/2R is smaller than 1, and increases as the length increases. The g(z) and g(x) factors as functions of the k(z), radius R and length L are calculated for the wires and rods, respectively. For the wires, the g(z) of the electron ground state increases, and the g(z) of the hole ground state decreases first, then increases with the k(z) increasing. For the rods, the g(z) and g(x) of the electron ground state decrease as the R or the L increases. The g(x) of the hole ground state decreases, the g(z) of the hole ground state increases with the L increasing. The variation of the g(z) of the wires with the k(z) is in agreement with the variation of the g(z) of the rods with the L.

Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate

We report the observation of oscillating features in differential reflectance spectra from the GaAs epilayer grown on Si substrate in the energy range both below and above the fundamental band gap. It is demonstrated that the oscillating features are due to the difference in the interference between two neighboring areas of the sample. The interference arises from two light beams reflected from different interfaces of the sample. The calculated spectra in the nonabsorption region are in good agreement with measured data. It is shown that the interference effect can be used as a sensitive method to characterize the inhomogeneity of the semiconductor heterostructures. (C) 1998 American Institute of Physics. [S0021-8979(98)08723-4].