Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Net-like ferromagnetic MnSb film deposited on porous silicon substrates

MnSb films were deposited on porous silicon substrates by physical vapor deposition (PVD) technique. Modulation effects due to the substrate on microstructure and magnetic properties of the MnSb film's were studied by scanning electron microscope (SEM), X-ray diffraction (XRD) and measurements of hysteresis loops. SEM images of the MnSb films indicate that net-like structures were obtained because of the special morphology of the substrates. The net-like MnSb films exhibit some novel magnetic properties different from the unpatterned referenced samples. For example, in the case of net-like morphology, the coercive field is as low as 60 Oe. (c) 2006 Elsevier B.V. All rights reserved.

PIXE analysis of Fe content in Fe-implanted GaN film

The diluted magnetic semiconductors (DMSs) were achieved by the ion implantation. Fe+ ions (250 keV) were implanted into n-type GaN at room temperature with doses ranging from 8 X 10(15) cm(-2) to 8 X 10(16) cm(-2) and subsequently rapidly annealed at 800 degrees C for 5 m in N-2 ambient. PIXE was employed to determine the Fe-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters are detected within the sensitivity of XRD. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The relationships between the Fe-implanted content and the ferromagnetic property are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. The resonant tunneling current is superimposed on the thermal current, and together they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77 or 300 K, and thus resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect. (c) 2006 The Electrochemical Society.

MnSb/porous silicon hybrid structure prepared by physical vapor deposition

MnSb/porous silicon hybrid structure was prepared by physical vapor deposition technique. The structure and surface morphology of the MnSb films were analyzed by X-ray diffraction and scanning electron microscope, respectively. The magnetic hysteresis loops were obtained by an alternative gradient magnetometer. Based on the measurements, only MnSb phase was found and the surface morphology was rough and island-like. MnSb thin films show ferromagnetism at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 X 10(21) cm(-3), indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition

Fe-N films containing the Fe16N2 phase were prepared in a high-vacuum system of ion-beam-assisted deposition (IBAD). The composition and structure of the films were analysed by Auger electron spectroscopy (AES) and X-ray diffraction (XRD), respectively. Magnetic properties of the films were measured by a vibrating sample magnetometer (VSM). The phase composition of Fe-N films depend sensitively on the N/Fe atomic arrival ratio and the deposition temperature. An Fe16N2 film was deposited successfully on a GaAs (1 0 0) substrate by IBAD at a N/Fe atomic arrival ratio of 0.12. The gram-saturation magnetic moment of the Fe16N2 film obtained is 237 emu/g at room temperature, the possible cause has been analysed and discussed. Hysteresis loops of Fe16N2 have been measured, the coercive force H-c is about 120 Oe, which is much larger than the value for Fe, this means the Fe16N2 sample exhibits a large uniaxial magnetocrystalline anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.

A Fast-Locking Phase-Locked Loop Using a Seven-State Phase Frequency Detector

A seven-state phase frequency detector (S.S PFD) is proposed for fast-locking charge pump based phase-locked loops (CPPLLs) in this paper. The locking time of the PLL can be significantly reduced by using the seven-state PFD to inject more current into the loop filter. In this stage, the bandwidth of the PLL is increased or decreased to track the phase difference of the reference signal and the feedback signal. The proposed architecture is realized in a standard 0.35 mu m 2P4M CMOS process with a 3.3V supply voltage. The locking time of the proposed PLL is 1.102 mu s compared with the 2.347 mu s of the PLL based on continuous-time PFD and the 3.298 mu s of the PLL based on the pass-transistor tri-state PFD. There are 53.05% and 66.59% reductions of the locking time. The simulation results and the comparison with other PLLs demonstrate that the proposed seven-state PFD is effective to reduce locking time.

An adaptive frequency synthesizer architecture reducing reference sidebands

An adaptive phase-locked loop (PLL) frequency synthesizer architecture for reducing reference sidebands at the output of the frequency synthesizer is described. The architecture combines two tuning loops: one is the main loop for locking the PLL frequency synthesizer and operating all the time, the other one is auxiliary loop for reducing reference sidebands and operating only when the main loop is closely locked. A 1.8V 1GHz fully integrated CMOS dual-loop frequency synthesizer is designed in a 0.18um CMOS process. The suppression of the reference sidebands of the proposed frequency synthesizer is 13.8dB more than that of the general frequency synthesizer.

P-QuantWiz:一种基于质谱的并行非标记定量软件

本文设计并实现了基于质谱的非标记定量软件QuantWiz,通过改变肽段定量的顺序,提高了定量软件的时间局部性和质谱数据缓存的命中次数。分析了QuantWiz的多种数据并行策略,设计并实现了按保留时间划分的并行定量软件P-QuantWiz。通过实验验证P-QuantWiz具有良好的并行效率,当进程数为32时,并行效率为63%。

FM-index分块并行算法及其实现

查询海量数据有压缩和索引两种方法来提高速度,该文结合这两种方法提出了压缩查询的方法.FM-index是一种自索引的全文查询算法,存在内存占用过大的问题,对于复杂的查询效率也不理想.该文提出分块FM-index算法,在分块的基础上采用MPI对算法进行并行化,解决了内存占用过多的问题,达到了较好的并行效率.

有限元单元计算子程序的OpenMP并行化

Intel和AMD双核乃至4核处理器的推出,使得并行计算已经普及到PC机。为了充分利用多核,需要对原有程序进行多线程改造,使其充分利用多核处理带来的性能提升。该文利用共享存储编程的工业标准OpenMP对有限元方法涉及的单元计算子程序进行了并行化实现。在机群的一个双CPU的SMP节点上的测试表明,共享并行化使得该单元子程序的性能提高了一倍。

有限元单元计算予程序的OpenMP并行化

Intel和AMD双核乃至4核处理器的推出，使得并行计算已经普及到PC机。为了充分利用多核，需要对原有程序进行多线程改造，使其充分利用多核处理带来的性能提升。该文利用共享存储编程的工业标准OpenMP对有限元方法涉及的单元计算子程序进行了并行化实现。在机群的一个双CPU的SMP节点上的测试表明，共享并行化使得该单元子程序的性能提高了一倍。