Simulation of Free-Surface Flow in a Tank Using the Navier-Stokes Model and Unstructured Finite Volume Method

Modelling free-surface flow has very important applications in many engineering areas such as oil transportation and offshore structures. Current research focuses on the modelling of free surface flow in a tank by solving the Navier-Stokes equation. An unstructured finite volume method is used to discretize the governing equations. The free surface is tracked by dynamically adapting the mesh and making it always surface conforming. A mesh-smoothing scheme based on the spring analogy is also implemented to ensure mesh quality throughout the computaiton. Studies are performed on the sloshing response of a liquid in an elastic container subjected to various excitation frequencies. Further investigations are also carried out on the critical frequency that leads to large deformation of the tank walls. Another numerical simulation involves the free-surface flow past as submerged obstacle placed in the tank to show the flow separation and vortices. All these cases demonstrate the capability of this numerical method in modelling complicated practical problems.

A New Analytical Model for Residual Stresses due to Thermal Surface Coating

发展了一种新的分析涂层结构（平板、梁）热残余应力的模型,可以研究骤冷过程(Quenching)和冷却过程(Cooling)在涂层结构内引发的残余应力分布。与以往模型相比,其优势在于：它可以考虑源于喷涂过程的涂层孔隙率、温度梯度等因素对于涂层和基底内残余应力的影响。其中孔隙率和温度分布由计算机模拟涂层沉积过程得到。另外,当基底的材料和几何参数被固定时,我们分析了诸如涂层的理想模量、厚度、热膨胀系数等参数,对于涂层结构中最终残余应力分布的改变机理。

Quantum Monte Carlo study of the CO interaction with a dimer model surface for Cr(110)

The chemisorption of CO on a Cr( 110) surface is investigated using the quantum Monte Carlo method in the diffusion Monte Carlo (DMC) variant and a model Cr2CO cluster. The present results are consistent with the earlier ab initio HF study with this model that showed the tilted/ near-parallel orientation as energetically favoured over the perpendicular arrangement. The DMC energy difference between the two orientations is larger (1.9 eV) than that computed in the previous study. The distribution and reorganization of electrons during CO adsorption on the model surface are analysed using the topological electron localization function method that yields electron populations, charge transfer and clear insight on the chemical bonding that occurs with CO adsorption and dissociation on the model surface.

A surface energy model and application to mechanical behavior analysis of single crystals at sub-micron scale

Size effects of mechanical behaviors of materials are referred to the variation of the mechanical behavior due to the sample sizes changing from macroscale to micro-/nanoscales. At the micro-/nanoscale, since sample has a relatively high specific surface area (SSA) (ratio of surface area to volume), the surface although it is often neglected at the macroscale, becomes prominent in governing the energy effect, although it is often neglected at the macroscale, becomes prominent in governing the mechanical behavior. In the present research, a continuum model considering the surface energy effect is developed through introducing the surface energy to total potential energy. Simultaneously, a corresponding finite element method is developed. The model is used to analyze the axial equilibrium strain problem for a Cu nanowire at the external loading-free state. As another application of the model, from dimensional analysis, the size effects of uniform compression tests on the microscale cylinder specimens for Ni and Au single crystals are analyzed and compared with experiments in literatures. (C) 2009 Elsevier B.V. All rights reserved.

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Thermodynamic model of hydrogen-induced silicon surface layer cleavage

A thermodynamic model of hydrogen-induced silicon surface layer splitting with the help of a bonded silicon wafer is proposed in this article. Wafer splitting is the result of lateral growth of hydrogen blisters in the entire hydrogen-implanted region during annealing. The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion. The hydrogen blister radius was studied as a function of annealing time, annealing temperature, and implantation dose. The critical radius was obtained according to the Griffith energy condition. The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters. (C) 2001 American Institute of Physics.

A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers

Small signal equivalent circuit model and modulation properties of vertical cavity-surface emitting lasers (VCSEL's) are presented. The modulation properties both in analytic-equation calculation and in circuit model simulation are studied. The analytic-equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulation is simulated by using Pspice program respectively. The results of calculation and the simulation are in good agreement with each other. Experiment is performed to testify the circuit model.

Small signal equivalent circuit model of vertical cavity surface emitting lasers

Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given in this paper. The modulation properties of VCSEL are simulated using this model in Pspice program. The simulation results are good agree with experiment data. Experiment is performed to testify the circuit model.

公用陆面模式（Community Land Model 3.0）简介

IEECAS SKLLQG

Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

A thermodynamic model of the evolution of microcracks in silicon caused by helium and hydrogen co-implantation during annealing was studied. The crack growth rate relies on the amount of helium atoms and hydrogen molecules present. Here, the crack radius was studied as a function of annealing time and temperature, and compared with experimental results. The mean crack radius was found to be proportional to the annealing temperature and the helium and hydrogen implanted fluence. The gas desorption should be considered during annealing process. (C) 2009 Elsevier B.V. All rights reserved.