K-shell ionization cross section of aluminium induced by low-energy highly charged argon ions

Al K-shell X-ray yields are measured with highly charged Arq+ ions (q = 12-16) bombarding against aluminium. The energy range of the Ar ions is from 180 to 380 keV. K-shell ionization cross sections of aluminium are also obtained from the yields data. The experimental data is explained within the framework of 2p pi-2p sigma s rotational coupling. When Ar ions with 2p-shell vacancies are incident on aluminium, the vacancies begin to reduce. Meanwhile, collisions against Al atoms lead to the production of new 2p-shell vacancies of Ar ions. These Ar 2p-shell vacancies will transfer to the 1s orbit of an Al atom via 2p pi-2p sigma s rotational coupling leading to the emission of a K-shell X-ray of aluminiun. A model is constructed based on the base of the above physical scenario. The calculation results of the model are in agreement with the experimental results.

用于辐射复合与双电子复合实验的低能离子闪烁探测器；A Scintillator Detector for Low Energy Projectile Detection in Radiative Recombination and Dielectron Recombination Experiments

为了在CSRm的电子冷却器上进行辐射复合以及双电子复合实验,需要探测能量小于4MeV/u的离子,因此设计了新的置于超高真空环境的CsI(Tl)闪烁探测器,探测器采用的光电倍增管为R7525(Hamamatsu)。介绍了新闪烁探测器的结构,并对其进行了性能测试。测试结果表明,该探测器对高、低能离子均有良好的响应,探测器的信号十分明显。探测器的最高计数率可以达到106ions/s,并且探测器附近的真空度可达10-10Pa量级,能够满足辐射复合与双电子复合实验以及储存环对真空的要求,为今后在CSRm上进行复合实验打下了良好的基础。

Molecular vibration spectroscopy study of irradiation effect in C-60 films induced by low energy ion

Irradiation effect in C-60 films induced by 170 keV B ion was investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies. The damage cross section sigma and the effective damage radius R are deduced from the experimental data of all four IR active modes and evident four Raman active modes of C-60 molecule. The differences on irradiation sensitivity and structural stability of the different active modes of C-60 molecule are compared. The results indicate that T-1u (4) of infrared active mode and A(g) (1) of Raman active mode are most sensitive for B ion irradiation. On the other hand T-1u (2) of infrared active mode and H-g (3) of Raman active mode are comparatively stable under B ion irradiation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3512968]

低能髙流强电子束在绝缘管中的导向效应研究

带电粒子与绝缘体表面相互作用的研究揭示了很多新的物理现象和物理规律，目前该研究领域已拓展到原子物理，固体物理，等离子体物理等领域，特别是促进了纳米材料，超小尺寸半导体芯片制作，固体结构分析等应用领域的发展。本论文介绍了低能高流强电子束与绝缘体相互作用实验平台的建设，包括强流LaB6电子枪，64通道一维位置灵敏法拉第筒，电流电压转换放大器，基于Lab VIEW的数据获取软件系统等。研究了低能高流强电子束与锥形绝缘毛细管之间的相互作用。测量了出射电子的角分布与能谱，研究了入射电子能量、流强对电子传输效率的影响，分析了电子与高电荷态粒子同毛细管相互作用的区别。用低能高流强电子束与等内径弯曲绝缘管相互作用，测量了出射电子的角分布，研究了入射能量与流强对导向效应的影响。研究表明，与高点和态离子相比，电子与绝缘管相互作用有许多新的特性，电子传输效率较高电荷态粒子小1-2个数量级，且能量损失严重。量子反射和多次小角度散射是电子导向的主要原因

Calculation of electrostatic energy H-e(fd) on 4f(N-1)5d configurations for heavy lanthanide ions

For the 4f(N-1)5d configuration the Coulomb interaction between f and d electrons was parameterized by F-k(fd) with K = 2, 4, and G(K)(fd) with K = 1, 3, 5. The spin-orbit interaction for 4f and 5d electrons can be parameterized by xi (f) and xi (d) respectively, which can be compounded into one lambda : lambda = axi (f) + bxi (d), where a and b are the corresponding coefficients. The energy expressions of H-e(fd) of the chief low-energy levels of 4f(N-) (1)5d configuration for heavy lanthanide ions were calculated and the corresponding spin-orbit parameters lambda were also given in LS coupling, which are profitable in analyzing the spectra of the heavy lanthanide ions.

Thermal stress wave and spallation induced by an electron beam

Thermal stress wave and spallation in aluminium alloy exposed to a high fluency and low energy electron beams are studied theoretically. A simple model for the study of energy deposition of electrons in materials is presented on the basis of some empirical formulae. Under the stress wave induced by energy deposition, microcracks and/or microvoids may appear in target materials, and in this case, the inelastic volume deformation should not vanish. The viscoplastic model proposed by Bodner and Partom with corresponding Gurson's yield function requires modification for this situation. The new constitutive model contains a scalar field variable description of the material damage which is taken as the void volume fraction of the polycrystalline material. Incorporation of the damage parameter permits description of rate-dependent, compressible, inelastic deformation and ductile fracture. The melting phenomenon has been observed in the experiment, therefore one needs to take into account the melting process in the intermediate energy deposition range. A three-phase equation of state used in the paper provides a more detailed and thermodynamical description of metals, particularly, in the melting region. The computational results based on the suggested model are compared with the experimental test for aluminium alloy, which is subjected to a pulsed electron beam with high fluency and low energy. (C) 1997 Elsevier Science Ltd.

Time-resolved investigation of low-density plasma channels produced by a kilohertz femtosecond laser in air

By employing pump-probe back longitudinal diffractometry, the electron density and decay dynamics of a weak plasma channel created by a 1-KHz fs laser in air has been investigated. With ultrashort laser pulses of 50 fs and low energy of 0.6 mJ, we observe weak plasma channels with a length similar to 2 cm in air. An analytical reconstruction method of electron density has been analyzed, which is sensitive to the phase shift and channel size. The electron density in the weak plasma channel is extracted to be about 4x10(16) cm(-3). The diameters of the plasma channel and the filament are about 50 and 150 mu m, respectively, and the measurable electron density can be extended to less than 10(15) cm(-3). Moreover, a different time-frequency technique called linearly chirped longitudinal diffractometry is proposed to time-resolved investigate ultrafast ionization dynamics of laser-irradiated gas, laser interaction with cluster beam, etc.

Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells

We have investigated spin polarization-related localized exciton photoluminescence (PL) dynamics in GaInNAs quantum wells by time-resolved PL spectroscopy. The emission energy dependence of PL polarization decay time as well as polarization-independent PL decay time suggests that the acoustic phonon scattering in the process of localized exciton transfer from the high-energy localized states to the low-energy ones dominates the PL polarization relaxation. By increasing the excitation power from 1 to 10 mW, the PL polarization decay time is changed from 0.17 to more than 1 ns, which indicates the significant effect of the trapping of localized electrons by nonradiative recombination centers. These experimental findings indicate that the spin-related PL polarization in diluted nitride semiconductors can be manipulated through carrier scattering and recombination process. (C) 2009 The Japan Society of Applied Physics

Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation

Mn ions were doped into InAs/GaAs quantum dots samples by high energy. implantation and subsequent annealing. The optical and electric properties of the samples have been studied. The photoluminescence intensity of the samples annealed rapidly is stronger than that of the samples annealed for long time. By studying the relationship between the photoluminescence peaks and the implantation dose, it can be found that the photoluminescence peaks of the quantum dots show a blueshift firstly and then move to low energy with the implantation. dose increasing. The latter change in the photoluminescence peaks is probably attributed to that Mn ions entering the InAs quantum dots, which release the strain of the quantum dots. For the samples implanted by heavy dose (annealed rapidly) and the samples annealed for long time, the resistances versus temperature curves reveal anomalous peaks around 40 K.

An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point

In this paper, an n-type Si1-xGex/Ge (x >= 0.85) quantum cascade (QC) structure utilizing a deep Ge quantum well for electrons at the Gamma point is proposed. Based on linear interpolation, a conduction band offset at the Gamma point in a Si1-xGex/Ge ( x >= 0.85) heterostructure is presented, which is suitable for designing a QC laser. This approach has the advantages of a large conduction band offset at the Gamma point, a low lattice mismatch between the Si1-xGex/Ge ( x >= 0.85) active layers and the Si1-yGey ( y > x) virtual substrate, a small electron effective mass in the Gamma band, simple conduction energy band structures and a simple phonon scattering mechanism in the Ge quantum well. The theory predicts that if high-energy electrons are continuously injected into the Gamma band, a quasi-equilibrium distribution of electrons between the Gamma and L bands can be reached and held, i.e., electrons with a certain density will be kept in the Gamma band. This result is supported by the intervalley scattering experiments. In n-type Si1-xGex/Ge ( x >= 0.85) QC structures, population inversion between the laser's upper and lower levels is demonstrated.

Influence of ion energy and deposition temperature on the surface morphology of carbon films deposited by ion beams

Carbon films were deposited by mass-selected ion beam technique with ion energies 50-200eV at a substrate temperature from room temperature to 80 degreesC,. For the energies used, smooth diamond-like carbon films were deposited at room temperature. When the substrate temperature was 600 degreesC,rough graphitic films were produced. But highly oriented carbon tubes were observed when the energies were larger than 140eV at 800 degreesC. They were perpendicular to the surface and parallel to each other. preferred orientation of graphite basic plane was observed by high-resolution electron microscopy. Shallow ion implantation and stress are responsible for this orientation.

Low-lying non-normal parity states in B-8 measured by proton elastic scattering on Be-7

A new measurement of proton resonance scattering on Be-7 was performed tip to the center-of-mass energy of 6.7 MeV using the low-energy RI beam facility CRIB (CNS Radioactive Ion Beam separator) at the Center for Nuclear Study of the University of Tokyo. The excitation function of Be-7 + p elastic scattering above 3.5 MeV was measured Successfully for the first time, providing important information about the resonance structure of the B-8 nucleus. The resonances are related to the reaction rate of Be-7(p.gamma)B-8. which is the key reaction in solar B-8 neutrino production. Evidence for the presence of two negative parity states is presented. One of them is a 2(-) state observed as a broad s-wave resonance, the existence of which had been questionable. Its possible effects on the determination of the astrophysical S-factor of Be-7(p.gamma)B-8 at solar energy are discussed. The other state had not been observed in previous measurements, and its spin and parity were determined as 1(-). (C) 2009 Elsevier B.V. All rights reserved.