Genome 10K: A Proposal to Obtain Whole-Genome Sequence for 10 000 Vertebrate Species

The human genome project has been recently complemented by whole-genome assessment sequence of 32 mammals and 24 nonmammalian vertebrate species suitable for comparative genomic analyses. Here we anticipate a precipitous drop in costs and increase in sequ

The Anti-HIV Actions of 7-and 10-Substituted Camptothecins

Camptothecin (CPT), a traditional anti-tumor drug, has been shown to possess anti-HIV-1 activity. To increase the antiviral potency, the anti-HIV activities of two CPT derivatives, 10-hydroxy-CPT and 7-hydroxymethyl-CPT, were evaluated in vitro. The therapy index (TI) of CPT, 10-hydroxy-CPT and 7-hydroxymethyl-CPT against HIV-1(IIIB) in C8166 were 24.2, 4.2 and 198.1, and against clinical isolated strain HIV-1(KM018) in PBMC were 10.3, 3.5 and 66.0, respectively. While the TI of CPT, 10-hydroxy-CPT and 7-hydroxymethyl-CPT against HIV-2(CBL-20) were 34.5, 10.7 and 317.0, respectively, and the TI of the three compounds against HIV-2(ROD) showed the similar values. However, when the antiviral mechanisms were considered, we found there was no inhibition of 7-hydroxymethyl-CPT on viral cell-to-cell transmission, and was no inhibition on reverse transcriptase, protease or integrase in cell-free systems. 7-Hydroxymethyl-CPT showed no selective killing of chronically infected cells after 3 days of incubation. In conclusion, 7-hydroxymethyl-CPT showed more potent anti-HIV activity, while 10-hydroxy-CPT had less efficient activity, compared with the parent CPT. Though the antiviral mechanisms remain to be further elucidated; the modification of -OH residues at C-7 of CPT could enhance the antiviral activity, while of -OH residues at C-10 of CPT had decreased the antiviral activity, which provides the preliminary modification strategy for anti-viral activities enhancement of this compound.

Anti-HIV Actions of 7- and 10-Substituted Camptothecins (vol 15, pg 138, 2010)

The authors thank the anonymous reviewer for helpful comments on the early version of the manuscript. This work was financially supported by the earmarked fund for Modern Agro-industry Technology Research System, the Science Fund for Young Scholars in Sichuan Province (Grant No: ZQ 026-017), and the National 863 Project of China (No. 2008AA101001).

鸟类核型研 Ⅶ: 雉冬10种鸟类

报道了雉科10种鸟的核型, 并依据核型和DNA比较数据提出了对雉科中亚科分类的新观点。 图版1表3参11

鲢(Hypophthalmichthys molitrix)IL-10基因的克隆及表达分析

白细胞介素10(IL-10)是一种作用广泛的抗炎细胞因子,主要功能是限制和最终终止炎症反应．用RACE(rapid amplification of cDNA ends)-PCR方法扩增出鲢白细胞介素10(IL-10)的 cDNA,其全长为1248nt,包含5’非编码区156 nt,3’非编码区552nt,开放阅读框540nt．鲢IL- 10的开放阅读框编码179个氨基酸,其中包含构成两对二硫键的4个保守半胱氨酸．RT-PCR结果显示鲢IL-10 mRNA主要在脾脏、鳃、头肾和肌肉中表达．将鲢IL-10完

细菌DC_(10)的溶藻作用及环境因子对该作用的影响

从云南滇池分离获得溶藻细菌DC10,该菌属于假单胞菌属(Pseudomonassp.),它能强烈地溶解绿色微囊藻(Microcystisviridis,FACHB102)等6种蓝藻及月芽藻(Selenastrumcapricornutum,FACHB271)等2种绿藻.试验发现,该菌通过分泌某种物质来溶解藻类,较低的温度以及黑暗条件有利于细菌溶藻,不同浓度的氯化钙、硝酸钠对该菌的溶藻作用有一定影响;不同pH条件下,溶藻作用的强弱依次为:pH4>pH9>pH7>pH5.5.发展利用该菌进行水华控制的技术具有

10 Gb/s 光模块的设计与测试

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.

10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE

A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s(-1) optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s(-1) non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

　

A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multi-quantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30 mu m). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19 mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at bit-error-rate of 10(-1)0 is confirmed. (c) 2005 Elsevier B.V. All rights reserved.