Debonding and cracking energy release rate of the fiber/matrix interface

An investigation of fiber/matrix interfacial fracture energy is presented in this paper. Several existing theoretical expressions for the fracture energy of interfacial debonding are reviewed. For the single-fiber/matrix debonding and pull-out experimental model, a study is carried out on the effect of interfacial residual compressive stress and friction on interface cracking energy release rate.

Characteristics Of Energy Dissipation In Hyperconcentrated Flows

An equilibrium equation for the turbulence energy in sediment-laden flows was derived on the basis of solid-liquid two-phase flow theory. The equation was simplified for two-dimensional, uniform, steady and fully developed turbulent hyperconcentrated flows. An energy efficiency coefficient of suspended-load motion was obtained from the turbulence energy equation, which is defined as the ratio of the sediment suspension energy to the turbulence energy of the sediment-laden flows. Laboratory experiments were conducted to investigate the characteristics of energy dissipation in hyperconcentrated flows. A total of 115 experimental runs were carried out, comprising 70 runs with natural sediments and 45 runs with cinder powder. Effects of sediment concentration on sediment suspension energy and flow resistance were analyzed and the relation between the energy efficiency coefficient of suspended-load motion and sediment concentration was established on the basis of experimental data. Furthermore, the characteristics of energy dissipation in hyperconcentrated flows were identified and described. It was found that the high sediment concentration does not increase the energy dissipation; on the contrary, it decreases flow resistance.

Effect of body size on growth and energy budget of Nile tilapia, Oreochromis niloticus

A growth trial was conducted at 30 degrees C to investigate the effect of body size on growth and energy budget of Nile tilapia. The average initial body weights of the four size groups tested were 9.3, 34.1, 80.3 and 172.4 g, respectively. Fish were fed to satiation twice a day with a diet containing 35.6% crude protein. Food consumption (C-max: kJ/day) increased with body size (W: g) according to the relationship: Ln C-max = 1.45 + 0.42 LnW. The final body contents of dry matter, crude protein and ash per unit body weight increased with increasing body size while contents of fat and energy were independent of body size. Specific growth rates of wet weight, dry weight, protein and energy decreased as the fish increased in size. Feed efficiencies in wet weigh, dry weight and crude protein decreased with increasing body size, while that of energy remained unchanged. The proportions of energy intake allocated to the various components (faecal energy, excretory energy, heat production and recovered energy) of the energy budget were not significantly affected by body size, and the average budget was: 100IE-18.5(+/- 1.33)FE + 5.9 (+/- 3.09)(ZE + UE) + 49.3(+/- 3.77)HE + 26.3(+/- 6.23)RE, where IE, FE, (ZE + UE), HE and RE represent gross energy intake, faecal energy, excretory (non-faecal) energy loss, heat production and recovered energy (growth), respectively. It is suggested that the decrease in growth rate in larger fish is mainly due to the decrease in relative food intake. (C) 1997 Elsevier Science B.V.

Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy

Anisotropic exchange splitting (AES) is induced by the joint effects of the electron-hole exchange interaction and the symmetry reduction in quantum wells and quantum dots. A model has been developed to quantitatively obtain the electron-hole exchange energy and the hole-mixing energy of quantum wells and superlattices. In this model, the AES and the degree of polarization can both be obtained from the reflectance difference spectroscopy. Thus the electron-hole exchange energy and the hole-mixing energy can be completely separated and quantitatively deduced. By using this model, a (001)5 nm GaAs/7 nm Al0.3Ga0.7As superlattice sample subjected to [110] uniaxial strains has been investigated in detail. The n=1 heavy-hole (1H1E) exciton can be analyzed by this model. We find that the AES of quantum wells can be linearly tuned by the [110] uniaxial strains. The small uniaxial strains can only influence the hole-mixing interaction of quantum wells, but have almost no contribution to the electron-hole exchange interaction. (c) 2008 American Institute of Physics.

Investigation of Mn-implanted n-Si by low-energy ion beam deposition

Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5 x 10(17) cm(-2). The samples were held at room temperature and at 300degreesC during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300degreesC than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300degreesC is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300degreesC has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300degreesC shows ferromagnetic behavior at room temperature. (C) 2004 Elsevier BN. All rights reserved.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

Energy bands and acceptor binding energies of GaN

The energy bands of zinc-blende and wurtzite GaN are calculated with the empirical pseudopotential method, and the pseudopotential parameters for Ga and N atoms are-given. The calculated energy bands are in agreement with those obtained by the ab initio method. The effective-mass theory for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN for both structures are given The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor are 24 and 142 meV for the zinc-blende structure, 20 and 131, and 97 meV for the wurtzite structure, respectively, which are consistent with recent experimental results. It is proposed that there are two kinds of acceptor in wurtzite GaN. One kind is the general acceptor such as C, which substitutes N, which satisfies the effective-mass theory. The other kind of acceptor includes Mg, Zn, Cd, etc., the binding energy of these accepters is deviated from that given by the effective mass theory. In this report, wurtzite GaN is grown by the molecular-beam epitaxy method, and the photoluminescence spectra were measured. Three main peaks are assigned to the donor-acceptor transitions from two kinds of accepters. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. [S0163-1829(99)15915-0].

Electronic structures of InAs self-assembled quantum dots in an axial magnetic field

The electronic structure of an InAs self-assembled quantum dot in the presence of a perpendicular magnetic field is investigated theoretically. The effect of finite offset, valence-band mixing, and strain are taken into account. The hole levels show strong anticrossings. The large strain and strong magnetic field decrease the effect of mixing between heavy hole and light hole. The hole energy levels have in general a weaker field dependence compared with the corresponding uncoupled levels.

The effects of electric field on the electronic structure of a semiconductor quantum dot

The effect of electric field on the electronic structure of a spherical quantum dot is studied in the framework of the effective-mass envelope-function theory. The dependence of the energy of electron states and hole states on the applied electric field and on the quantum dot size is investigated; the mixing of heavy holes and light holes is taken into account. The selection rule for the optical transition between the conduction band and valence band states is obtained. The exciton binding energies are calculated as functions of the quantum dot radius and the strength of the electric field. (C) 1998 American Institute of Physics.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

Experimental and theoretical analysis of nondegenerate ultrabroadband chirped pulse optical parametric amplification

Experimental investigations of nondegenerate ultrabroadband chirped pulse optical parametric amplification have been carried out. The general mathematical expressions for evaluating parametric bandwidth, gain and gain bandwidth for arbitrary three-wave mixing parametric amplifiers are presented. In our experiments, a type-I noncollinear phase-matched optical parametric amplifier based on lithium triborate, which was pumped by a 5-ns second harmonic pulses from a Q-switched Nd:YAG operating at 10 Hz, seeded by a 14-fs Ti:sapphire laser at 800 nm, was presented. The 0.85 nJ energy of input chirped signal pulse with 57-FWHM has been amplified to 3.1 muJ at pump intensity 3 GW/cm(2), the corresponding parametric gain reached 3.6 x 10(3), the 53 nm-FWHM gain spectrum bandwidth of output signal has been obtained. The large gain and broad gain bandwidth, which have been confirmed experimentally, provide great potentials to amplify efficiently the broad bandwidth femtosecond light pulses to generate new extremes in power, intensity, and pulse duration using optical parametric chirped pulse amplifiers pumped by powerful nanosecond systems.

Nano-size Effect of Interface Energy and Its Effect on Interface Fracture

An analytical model about size-dependent interface energy of metal/ceramic interfaces in nanoscale is developed by introducing both the chemical energy and the structure stain energy contributions. The dependence of interface energy on the interface thickness is determined by the melting enthalpy, the molar volume, and the shear modulus of two materials composing the interfaces, etc. The analytic prediction of the interface energy and the atomic scale simulation of the interface fracture strength are compared with each other for Ag/MgO and Ni/Al2O3 interfaces, the fracture strength of the interface with the lower chemical interface energy is found to be larger. The potential of Ag/MgO interface related to the interface energy is calculated, and the interface stress and the interface fracture strength are estimated further. The effect of the interface energy on the interface strength and the behind mechanism are discussed.

Size modification of Au nanoparticles induced by slow highly charged ions Ar-40(q+) irradiation

Size modification of Au nanoparticles (NPs), deposited on the Au-thick film surface and irradiated by slow highly charged ions (SHCI) 40Arq+ (3 6 q 6 12) with fixed low dose of 4.3 1011 ions/cm2 and various energy ranging from 74.64 to 290.64 keV at room temperature (293.15 K), was investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The effect of projectile kinetic energy on the modified size of NPs was explored by an appropriate choice of the fixed process parameters such as ion flux, irradiation temperature, incident angle, irradiation time, etc. The morphological changes of NPs were interpreted by models involving collisional mixing, Ostwald ripening (OR) and inverse Ostwald ripening (IOR) of spherical NPs on a substrate. A critical kinetic energy as well as a critical potential energy of the projectile in the Au NPs size modification process were observed.

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

Triton-He-3 relative and differential flows as probes of the nuclear symmetry energy at supra-saturation densities

Using a transport model coupled with a phase-space coalescence afterburner, we study the triton-He-3 (t-He-3) ratio with both relative and differential transverse flows in semicentral Sn-132 + Sn-124 reactions at a beam energy of 400 MeV/nucleon. The neutron-proton ratios with relative and differential flows are also discussed as a reference. We find that similar to the neutron-proton pairs, the t-He-3 pairs also carry interesting information regarding the density dependence of the nuclear symmetry energy. Moreover, the nuclear symmetry energy affects more strongly the t-He-3 relative and differential flows than the pi(-)/pi(+) ratio in the same reaction. The t-He-3 relative flow can be used as a particularly powerful probe of the high-density behavior of the nuclear symmetry energy.