Phase shift caused by microwave field based on light storage

We have theoretically investigated the phase shift of a probe field for a four-level atomic system interacting successively with two fields tuned near an EIT resonance of an atom, a microwave field, and a coupling field. It has been found that the phase of retrieved signal has been shifted due to the cross-phase modulation when the stored spin wave was disturbed by a microwave. Because of the low relaxation rates of the ground hyperfine state, our proposed technique can impart a large phase rotation onto the probe field with low absorption of retrieved field and very low intensity of the microwave field.

Ultranarrow absorptive spectral line induced by microwave field

This paper investigates the absorptive spectral lines of four-level atomic system driven by a coupling, probe and microwave fields. Due to the perturbation of the microwave field, the original electromagnetically induced transparency is changed to electromagnetically induced absorption and the absorptive spectral line can be very narrow. This ultranarrow spectral line has potential applications to the microwave atomic frequency standard and the measurement of very weak magnetic field.

Routing scheme, permutation properties, and optical implementation of a four-shuffle-exchange-based Omega network

The routing scheme and some permutation properties of a four-shuffle-exchange-based Omega network are discussed. The corresponding optical setup, which is composed of 2-D phase spatial light modulators and calcite plates, is proposed and demonstrated through mapping the inputs to a 2-D array. Instead of one shuffle-exchange followed by one switching operation as in ordinary Omega networks, in our presented system, the shuffle interconnection embraced in the switches is accomplished simply by varying the switching structure of each stage. For the proposed polarization-optical modules, the system is compact in structure, efficient in performance, and insensitive to the environment. (C) 1997 Society of Photo-Optical Instrumentation Engineers.

A four-frame phase shift method insensitive to phase shifter nonlinearity

A four-frame phase shift method and an associated algorithm using unequal phase steps are presented. The unique advantage of this method is that it becomes insensitive to phase shifter nonlinearity because of the performance of a special procedure, in which the phase shifts are shared out between the reference beam and the object beam. By this means, any phase shifter can work as long as one phase shift is accurately known. On the basis of the technique, a simple calibration method for the linear phase shifter is suggested. The influences of phase shifter miscalibration, detector nonlinearity and random noise on the algorithm are investigated, and the optimal phase shifts are given.

Influence of the second cladding on the properties of four-layer large flattened mode fibers

A theoretical method to analyze four-layer large flattened mode (LFM) fibers is presented. The influence of the second cladding on the properties of four-layer LFM fiber, including the fundamental and higher-order modal fields, effective area, bending loss, and dispersion, are studied by comparison. At the same time, the reasons for the different characteristics are considered. The obtained results indicate that the effective area of the four-layer LFM fiber is about 1.6 times larger than that of the conventional standard step-index fiber and the fibers have better bend-induced filtering ability than three-layer LFM fibers. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Influence of the second cladding on the properties of four-layer large flattened mode fibers

A theoretical method to analyze four-layer large flattened mode (LFM) fibers is presented. The influence of the second cladding on the properties of four-layer LFM fiber, including the fundamental and higher-order modal fields, effective area, bending loss, and dispersion, are studied by comparison. At the same time, the reasons for the different characteristics are considered. The obtained results indicate that the effective area of the four-layer LFM fiber is about 1.6 times larger than that of the conventional standard step-index fiber and the fibers have better bend-induced filtering ability than three-layer LFM fibers. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Design guidelines and characteristics for a kind of four-layer large flattened mode fibers

A theoretical method to analyze a kind of four-layer large flattened mode (LFM) fibers is presented. The properties of the fiber, including the fundamental and higher-order modal fields, effective area and bending loss are discussed by comparison. At the same time, the reasons for the different characteristics are considered. The obtained results indicate that the effective area of the four-layer LFM fiber is about 1.3 times larger than that of the conventional standard step-index fiber and the fiber can suppress the higher-order modes via bending effectively. The four-layer LFM fiber has less efficient bend-induced filtering ability than the conventional step-index fiber; however, it has more efficient filtering ability than the three-layer LFM fiber. (C) 2007 Elsevier GmbH. All rights reserved.

激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化

研究了激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化,当激光功率为580mW时薄膜的方块电阻有四个数量级（10^7～10^3Ω/□）的突变;对电阻发生突变前、中、后的三个样品进行了XRD测试,结果表明,随着激光功率的增大,薄膜由非晶态向晶态转变,用椭偏仪测试了结构转变前、中、后三个样品的光学常数,在可见光范围内薄膜的光学常数在波长相同情况下有：n（非晶态）〉n（中间态）〉n（晶态）,k（晶态）〉k（中间态）〉k（非晶态）,α（晶态）〉α（中间态）〉α（非晶态）,结合电阻变化曲线和XRD图谱讨论了激光辐照Ge2Sb2Te5非晶态薄膜的电/光性质变化同激光功率和结构转变之间的关系.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

A four-passed ytterbium-doped fiber amplifier

In this paper, a four-passed ytterbium-doped fiber amplifier (YDFA) is discussed. The gain and the pump and the signal light propagation characteristics of the four-passed YDFA are described. It is found that, while using a shorter length of the fiber, a four-passed fiber amplifier can realize the same output power as a single-pass fiber amplifier, and, for the same fiber lengths, a four-passed fiber amplifier offers a significantly higher power than its single-pass counterpart. (C) 2006 Elsevier Ltd. All rights reserved.

Y2O3 stabilized ZrO2 thin films deposited by electron beam evaporation: Structural, morphological characterization and laser induced damage threshold

Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 content have been prepared on BK7 substrates by electron-beam evaporation method. Structural properties and surface morphology of thin films were investigated by X-ray diffraction (XRD) spectra and scanning probe microscope. Laser induced damage threshold (LIDT) was determined. It was found that crystalline phase and microstructure of YSZ thin films was dependent on Y2O3 molar content. YSZ thin films changed from monoclinic phase to high temperature phase (tetragonal and cubic) with the increase of Y2O3 content. The LIDT of stabilized thin film is more than that of unstabilized thin films. The reason is that ZrO2 material undergoes phase transition during the course of e-beam evaporation resulting in more numbers of defects compared to that of YSZ thin films. These defects act as absorptive center and the original breakdown points. (c) 2006 Elsevier B.V. All rights reserved.

基底温度对直流磁控溅射ITO透明导电薄膜性能的影响

用直流磁控溅射法制备透明导电锡掺杂氧化铟(ITO)薄膜,靶材为ITO陶瓷靶,组分为m(In2O3):m(SnO2)=9∶1。运用分光光度计、四探针测试仪研究了基底温度对薄膜透过率、电阻率的影响,并用X射线衍射(XRD)仪对薄膜进行结构分析。计算了晶面间距和晶粒尺寸,分析了薄膜的力学性质。实验结果表明,在实验设备条件下,直流磁控溅射ITO陶瓷靶制备ITO薄膜时,适当的基底温度(200℃)能在保证薄膜85%以上高可见光透过率下,获得最低的电阻率,即基底温度有个最佳值。薄膜的结晶度随着基底温度的提高而提高。