Shape evolution of Ge/Si(001) islands induced by strain-driven alloying

The shape evolution of Ge/Si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. We find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. While at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. The presence of the atomic intermixing between the Ge islands and Si substrate at high deposition rate is responsible for the reverse evolution. (C) 2001 American Institute of Physics.

Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells

The optical properties of above- and below-band-edge transitions have been investigated by incorporating In atoms into GaNAs/GaAs single quantum wells. The experimental results show that with increasing In concentration the interband luminescence is improved and the luminescence intensity below the band edge in GaInNAs/GaAs decreases significantly. An interpretation is given that N atoms are preferable to form a covalent bond with In than with Ga atoms in a GaInNAs alloy, due to the compensation of the atomic-size difference between In and N atoms on the GaAs substrate. The photoreflectance spectra of the GaInNAs/GaAs single quantum well support the assignment of an intrinsic mechanism to the high-energy luminescence peak. (C) 2000 American Institute of Physics. [S0003- 6951(00)01752-6].

Domains in ferroelectric nanodots

Almost free-standing single crystal mesoscale and nanoscale dots of ferroelectric BaTiO(3) have been made by direct focused ion beam patterning of bulk single crystal material. The domain structures which appear in these single crystal dots, after cooling through the Curie temperature, were observed to form into quadrants, with each quadrant consisting of fine 90 degrees stripe domains. The reason that these rather complex domain configurations form is uncertain, but we consider and discuss three possibilities for their genesis: first, that the quadrant features initially form to facilitate field-closure, but then develop 90 degrees shape compensating stripe domains in order to accommodate disclination stresses; second, that they are the result of the impingement of domain packets which nucleate at the sidewalls of the dots forming "Forsbergh" patterns (essentially the result of phase transition kinetics); and third, that 90 degrees domains form to conserve the shape of the nanodot as it is cooled through the Curie temperature but arrange into quadrant packets in order to minimize the energy associated with uncompensated surface charges (thus representing an equilibrium state). While the third model is the preferred one, we note that the second and third models are not mutually exclusive.

MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON

The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two.

Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy

The structural properties of GaAs grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) were studied. The excess arsenic atoms in LTMBE GaAs exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and cause an increase in the lattice parameter of LTMBE GaAs. Annealing at above 300 degrees C, the arsenic interstitial couples decomposed, and As precipitates formed, resulting in a decrease in the lattice parameter.

Transition to Film Boiling in Microgravity: Influence of Subcooling

The transition process to film pool boiling in microgravity is studied experimentally aboard the Chinese recoverable satellite SJ-8. A quasi-steady heating method is adopted, in which the heating voltage is controlled to increase exponentially with time. Small, primary bubbles are formed and slid on the surface, which coalesce with each other to form a large coalesced bubble. Two ways are observed for the transition from nucleate to film boiling at different subcoolings. At high subcooling, the coalesced bubble with a smooth surface grows slowly. It is then difficult for the coalesced bubble to cover the whole heater surface, resulting in a special region of transition boiling in which nucleate boiling and local dry areas can coexist. In contrast, strong oscillation of the coalesced bubble surface at low subcooling may cause rewetting of local dry areas and activation of more nucleate sites, resulting in an abrupt transition to film boiling.

Dynamics of Vortex-Wave under a Travelling-Wave Modulation

The mecha nism of destabilization is studied for the rotating vortices (scroll waves and spiral waves) in excitable media induced by a parameter modulation in the form of a travelling-wave. It is found that a rigid rotating spiral in the two-dimensional (2D) system undergoes asynchronized drift along a straightline, and a 3D scrolling with its filament closed into a circle can be reoriented only if the direction of wavenumber of a travelling-wave perturbation is parallel to the ring plane. Then, in order to describe the behaviour of the synchronized drift of spiral wave and the reorientation of scrollring, the approximate formulas are given to exhibit qualitative agreements with the observed results.

Isospin-symmetry breaking effects on the strange electric and magnetic form factors of the nucleon

We examine the electric and magnetic strange form factors of the nucleon in the pseudoscalar-vector SU(3) Skyrme model, with special emphasis on the effects of isospin symmetry breaking (ISB). It is found that ISB has a nontrivial effect on the strange vector form factors of the nucleon and its contribution to the nucleon strangeness is significantly larger than one might naively expect. Our calculations and discussions may be of some significance for the experimental extraction of the authentic strangeness.