Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.

Plasmons in vertically coupled InAs/GaAs quantum dots

We investigate plasmon excitations in a quantum wire that consists of an infinite one-dimensional array of vertically coupled InAs/GaAs strained quantum dots (QDs). The research is carried out in the framework of random-phase approximation using effective-mass theory. Our formalism is capable of studying plasmons with strong tunneling among QDs, which frustrate the conventionally adopted tight-binding approximation. Based on this formalism, a systematic study on the intraminiband or intrasubband plasmon in vertically coupled InAs/GaAs strained QDs is presented. It is found that an increase of the dot spacing will inevitably reduce the plasmon energy. In contrast, the role of dot height is relatively complex and depends on the dot spacing. The results demonstrate the possibility to engineer collective excitations in low dimensional systems by simply changing their geometric configuration.

Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure

We investigated the temperature dependence (10-250 K) of the photoluminescence (PL) emission spectrum of self-organized Ge/Si(001) islands in a multilayer structure. With elevated temperature, we find that the thermally activated holes and electrons are gathered by the Ge islands in different ways. The holes drift from the wetting layer into the islands, while the electrons, confined in Si due to type-II band alignment, leak into the Ge islands by the electrostatic interaction with the holes accumulated there. It results in an increase of the integrated intensity of island-related PL at a certain temperature range and a reduction of the phonon energy in the phonon-assisted PL of the islands by involving a type-I transition into a type-II transition. (C) 2001 American Institute of Physics.

Optical properties of nanocrystalline silicon embedded in SiO2

Nanocrystalline silicon embedded SiO2 matrix has been formed by annealing the a-SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption and photoluminescence spectra of, the films have been studied in conjunction with micro-Raman scattering spectra. It is found that absorption presents an exponential dependence of absorption coefficient to photon energy in the range of 1.5-3.0 eV, and a sub-band appears in the range of 1.0-1.5 eV. The exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between surfaces and/or defect states of the silicon nanocrystallites. The existence of Stokes shift between absorption and photoluminescence suggests that the phonon-assisted luminescence would he enhanced due to the quantum confinement effects.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Exciton states in isolated quantum wires

The exciton states in isolated and semi-isolated quantum wires are studied. It is found that the image charges have a large effect on the effective Coulomb potential in wires. For the isolated wire the effective potential approaches the Coulomb potential in vacuum at large z distance. For the semi-isolated wire the effective potential is intermediate between the Coulomb potential in vacuum and the screened Coulomb potential at large distance. The exciton binding energy in the isolated wire is about ten times larger than that in the quantum well, and that in the semi-isolated wire is also intermediate between those in the isolated wire and in the quantum well. When the lateral width increases the binding energy decreases further, and approaches that in the quantum well. The real valence-band structure is taken into account, the exciton wave functions of the ground state in the zero-order approximation are given, and the reduced mass is calculated. The effect of the coupling between the ground and excited states are considered by the degenerate perturbation method, and it is found the coupling effect is small compared to the binding energy.

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs

The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Modeling study on the flow, heat transfer and energy conversion characteristics of low-power arc-heated hydrogen/nitrogen thrusters

A modeling study is conducted to investigate the effect of hydrogen content in propellants on the plasma flow, heat transfer and energy conversion characteristics of low-power (kW class) arc-heated hydrogen/nitrogen thrusters (arcjets). 1:0 (pure hydrogen), 3:1 (to simulate decomposed ammonia), 2:1 (to simulate decomposed hydrazine) and 0:1 (pure nitrogen) hydrogen/nitrogen mixtures are chosen as the propellants. Both the gas flow region inside the thruster nozzle and the anode-nozzle wall are included in the computational domain in order to better treat the conjugate heat transfer between the gas flow region and the solid wall region. The axial variations of the enthalpy flux, kinetic energy flux, directed kinetic-energy flux, and momentum flux, all normalized to the mass flow rate of the propellant, are used to investigate the energy conversion process inside the thruster nozzle. The modeling results show that the values of the arc voltage, the gas axial-velocity at the thruster exit, and the specific impulse of the arcjet thruster all increase with increasing hydrogen content in the propellant, but the gas temperature at the nitrogen thruster exit is significantly higher than that for other three propellants. The flow, heat transfer, and energy conversion processes taking place in the thruster nozzle have some common features for all the four propellants. The propellant is heated mainly in the near-cathode and constrictor region, accompanied with a rapid increase of the enthalpy flux, and after achieving its maximum value, the enthalpy flux decreases appreciably due to the conversion of gas internal energy into its kinetic energy in the divergent segment of the thruster nozzle. The kinetic energy flux, directed kinetic energy flux and momentum flux also increase at first due to the arc heating and the thermodynamic expansion, assume their maximum inside the nozzle and then decrease gradually as the propellant flows toward the thruster exit. It is found that a large energy loss (31-52%) occurs in the thruster nozzle due to the heat transfer to the nozzle wall and too long nozzle is not necessary. Modeling results for the NASA 1-kW class arcjet thruster with hydrogen or decomposed hydrazine as the propellant are found to compare favorably with available experimental data.

DETERMINING THE DENSITY DEPENDENCE OF THE NUCLEAR SYMMETRY ENERGY USING HEAVY-ION REACTIONS

We review recent progress in the determination of the subsaturation density behavior of the nuclear symmetry energy from heavy-ion collisions as well as the theoretical progress in probing the high density behavior of the symmetry energy in heavy-ion reactions induced by high energy radioactive beams. We further discuss the implications of these results for the nuclear effective interactions and the neutron skin thickness of heavy nuclei.

Nuclear stopping and compression in heavy-ion collisions at intermediate energies

The nuclear stopping and the radial flow are investigated with an isospin-dependent quantum molecular dynamics (IQMD) model for Ni + Ni and Pb + Pb from 0.4 to and 1.2 GeV/u. The expansion velocity as well as the degree of nuclear stopping are higher in the heavier system at all energies. The ratio between the flow energy and the total available energy in center of mass of the colliding systems exhibits a positive correlation to the degree of nuclear stopping. The maximum density (rho(max)) achieved in the compression is comparable to the hydrodynamics prediction only if the non-zero collision time effect is taken into account in the later. Due to the partial transparency, the growing of the maximum density achieved in the central region of the fireball with the increase of beam energy becomes gradually flat in the 1 GeV/u energy regime. (C) 2008 Elsevier B.V. All rights reserved.

Shell model study of single-particle and collective structure in neutron-rich Cr isotopes

The structure of neutron-rich Cr isotopes is systematically investigated by using the spherical shell model. The calculations reproduce well the known energy levels for the even-even Cr52-62 and odd-mass Cr53-59 nuclei, and predict a lowering of excitation energies around neutron number N = 40. The calculated B(E2; 2(1)(+) -> 0(1)(+)) systematics shows a pronounced collectivity around N = 40; a similar characteristic behavior has been suggested for Zn and Ge isotopes. Causes for the sudden drop of the 9/2(1)(+) energy in Cr-59 and the appearance of very low 0(2)(+) states around N = 40 are discussed. We also predict a new band with strong collectivity built on the 0(2)(+) state in the N = 40 isotope Cr-64.

Effect of entrance-channel asymmetry on the isospin dependence of nucleon emission in heavy ion collisions

Using the isospin- and momentum-dependent hadronic transport model 1BUU04, we have investigated the influence of the entrance-channel isospin asymmetry on the sensitivity of the pre-equilibrium neutron/proton ratio to symmetry energy in central heavy-ion collisions induced by high-energy radioactive beams. Our analysis and discussion are based on the dynamical simulations of the three isotopic reaction Systems Sn-132+Sn-124, Sn-124+Sn-112 and Sn-112+(112)Su which are of the same total proton number but, different isospin asymmetry. We find that, the kinetic-energy distributions of the pre-equilibrium neutron/proton ratio are quite sensitive to the density-dependence of symmetry energy at incident beam energy E/A = 400 MeV, and the sensitivity increases as the isospin asymmetry of the reaction system increases.

Probing the high density behavior of the symmetry energy by using proton elliptic flow

Based on the isospin- and momentum-dependent transport model IBUU04, we calculated the reaction of the Sn-132+Sn-124 systems in semi-central collisions at beam energies of 400/A MeV, 600/A MeV and 800/A MeV by adopting two different density dependent symmetry energies. It was found that the proton differential elliptic flow as a function of transverse momentum is quite sensitive to the density dependence of symmetry energy, especially for the considered beam energy range. Therefore the proton differential elliptic flow may be considered as a robust probe for investigating the high density behavior of symmetry energy in intermediate energy heavy ion collisions.

Multi-electron processes in 4.15-11.08 keV/u(13)C(6+) on argon collisions

The relative partial cross sections for C-13(6+)-Ar collisions at 4.15-11.08 keV/u incident energy are measured. The cross-section ratios sigma(2E)/sigma(SC), sigma(3E)/sigma(SC), sigma(4E)/sigma(SC) and sigma(5E)/sigma(SC) are approximately the constants of 0.51 +/- 0.05, 0.20 +/- 0.03, 0.06 +/- 0.03 and 0.02 +/- 0.01 in this region. The significance of the multi-electron process in highly charged ions (HCIs) with argon collisions is demonstrated (sigma(ME)/sigma(SC) as high as 0.79 +/- 0.06). In multi-electron processes, it is shown that transfer ionization is dominant while pure electron capture is weak and negligible. For all reaction channels, the cross-sections are independent of the incident energy in the present energy region, which is in agreement with the static characteristic of classic models, i.e. the molecular Coulomb over-the-barrier model (MCBM), the extended classical over-the-barrier (ECBM) and the semiempirical scaling laws (SL). The result is compared with these classical models and with our previous work of C-13(6+)-Ne collisions