182 resultados para Electrochemistry, Titanium Compounds, Nanotubes, Association, Calcination, Current Density, Electrochemical Electrodes


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The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

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In a laser ion source, plasma drift distance is one of the most important design parameters. Ion current density and beam pulse width are defined by plasma drift distance between a laser target and beam extraction position. In direct plasma injection scheme, which uses a laser ion source and a radio frequency quadrupole linac, we can apply relatively higher electric field at beam extraction due to the unique shape of a positively biased electrode. However, when we aim at very high current acceleration such as several tens of milliamperes, we observed mismatched beam extraction conditions. We tested three different ion current at ion extraction region by changing plasma drift distance to study better extraction condition. In this experiment, C6+ beam was accelerated. We confirmed that matching condition can be improved by controlling plasma drift distance.

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A modified subcell approach was adopted to evaluate the current density distributions of proton exchange membrane fuel cells (PEMFCs) with different electrodes. Conventional hydrophobic electrodes showed better performance under flooding conditions compared to hydrophilic electrodes. The thin-film hydrophilic electrode performed better in the absence of liquid water, but it was more readily flooded. A composite catalyst layer was designed with 2/3 of the area from the inlet prepared hydrophilic and the remaining 1/3 area hydrophobic. The composite catalyst layer with commercial scale dimension showed notable enhanced performance in the concentration polarization region. (C) 2004 The Electrochemical Society.

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In this work, a new promoter, tetrasulfophthalocyanine (FeTSPc), one kind of environmental friendly material, was found to be very effective in both inhibiting self-poisoning and improving the intrinsic catalysis activity, consequently enhancing the electro-oxidation current during the electro-oxidation of formic acid. The cyclic voltammograms test showed that the formic acid oxidation peak current density has been increased about 10 times compared with that of the Pt electrode without FeTSPc. The electrochemical double potential step chronoamperometry measurements revealed that the apparent activity energy decreases from 20.64 kJ mol(-1) to 17.38 kJ mol(-1) after Pt electrode promoted by FeTSPc. The promoting effect of FeTSPc may be owed to the specific structure and abundant electrons of FeTSPc resulting in both the steric hindrance of the formation of poisoning species (CO) and intrinsic kinetic enhancement. In the single cell test, the performance of DFAFC increased from 80 mW cm(-2) mg(-1) (Pt) to 130 mW cm(-2) mg(-1) after the anode electrode adsorbed FeTSPc.

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Three new iridium (III) complexes with two cyclometalated (CN)-N-boolean AND ligands (imidazole, oxazole and thiazole-based, respectively) and one acetylacetone (acac) ancillary ligand have been synthesized and fully characterized. The structure of the thiazole-based complex has been determined by single crystal X-ray diffraction analysis. The Ir center was located in a distorted octahedral environment by three chelating ligands with the N-N in the trans and C-C in the cis configuration. By changing the hetero-atom of (CN)-N-boolean AND ligands the order S, O and N, a marked and systematic hypsochromic shift of the maximum emission peak of the complexes was realized. The imidazole-based complex emits at a wavelength of 500 nm, which is in the blue to green region. The tuning of emission wavelengths is consistent with the variation of the energy gap estimated front electrochemistry results. An electroluminescent device using the thiazole-based complex as a dopant in the emitting layer has been fabricated. A highly efficient yellow emission with a maximum luminous efficiency of 9.8 cd/A at a current density of 24.2 mA/cm(2) and a maximum brightness of 7985 cd/m(2) at 19.6 V has been achieved.

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The electrochemical properties of the Ti0.17Zr0.08V0.35Cr0.10Ni0.30 alloy electrode were investigated. This alloy has good cycle life at 303 K, 313 K, and even at 323 K, but the discharge capacity decreases gradually at 333 K with increasing cycle number. Both the charge-discharge efficiency and the charge-discharge voltage reduce. The electrochemical impendence spectra indicate that the charge-transfer resistance decreases while the exchange current density increases as temperature increases. The apparent activation energy of the charge-transfer reaction is about 50 kJ mol(-1), which is higher than that on the AB(5) type alloy electrode.

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This paper presents results concerning structure and electrochemical characteristics of the La0.67Mg0.33 (Ni0.8Co0.1Mn0.1) (x) (x=2.5-5.0) alloy. It can be found from the result of the Rietveld analyses that the structures of the alloys change obviously with increasing x from 2.5 to 5.0. The main phase of the alloys with x=2.5-3.5 is LaMg2Ni9 phase with a PuNi3-type rhombohedral structure, but the main phase of the alloys with x=4.0-5.0 is LaNi(5)phase with a CaCu5-type hexagonal structure. Furthermore, the phase ratio, lattice parameter and cell volume of the LaMg2Ni9 phase and the LaNi5 phase change with increasing x. The electrochemical studies show that the maximum discharge capacity increases from 214.7 mAh/g (x=2.5) to 391.1 mAh/g (x=3.5) and then decreases to 238.5 mAh/g (x=5.0). As the discharge current density is 1,200 mA/g, the high rate dischargeability (HRD) increases from 51.1% (x=2.5) to 83.7% (x=3.5) and then decreases to 71.6% (x=5.0). Moreover, the exchange current density (I-0) of the alloy electrodes first increases and then decrease with increasing x from 2.5 to 5.0, which is consistent with the variation of the HRD. The cell volume reduces with increasing x in the alloys, which is detrimental to hydrogen diffusion and accordingly decreases the low-temperature dischargeability of the alloy electrodes.

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In the present paper, a 60 h life-time test of a direct ethanol fuel cell (DEFC) at a current density of 20 mA cm(-2) (the beginning 38 h) and 40 mA cm(-2) (the last 22 h) was carried out. After the life-time test, the MEA could not achieve the former performance. X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDX) were employed to characterize the anode and cathode catalyst before and after the life-time test. The XRD and TEM results showed that the particle size of the anode catalyst increased from 2.3 to 3.3 nm and the cathode from 3.0 to 4.6 nm. The EDX results of PtSn/C anode catalysts before and after the life-time test indicated that the content of the oxygen and tin, especially the content of the platinum, decreased prominently after the life-time test. The results suggest that the agglomeration of electrocatalysts, the destruction of the anode catalyst together with the fuel/water crossover from anode to cathode concurrently contribute to the performance degradation of the DEFC. (C) 2005 Elsevier B.V. All rights reserved.

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Using a refined two-dimensional hybrid-model with self-consistent microwave absorption, we have investigated the change of plasma parameters such as plasma density and ionization rate with the operating conditions. The dependence of the ion current density and ion energy and angle distribution function at the substrate surface vs. the radial position, pressure and microwave power were discussed. Results of our simulation can be compared qualitatively with many experimental measurements.

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The voltage-current properties during plasma electrolytic discharge were determined by measuring the current density and cell voltage as functions of processing time and then by mathematical transformation. Correlation between discharge I-V property and the coatings microstructure on aluminum alloy during plasma electrolfic oxidation was determined by comparing the voltage-current properties at different process stages with SEM results of the corresponding coatings. The results show that the uniform passive film corresponds to a I-V property with one critical voltage, and a compound of porous layer and shred ceramic particles corresponds to a I-Vproperty with two critical voltages. The growth regularity of PEO cermet coatings was also studied.

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定量分析电流密度在含裂纹载流薄板内的分布是当前利用电流热效应止裂技术中一个首先要解决的问题.由于裂纹的存在,电流密度在裂尖形成带奇异性分布的高度密集.现有的分析方法往往比较复杂或局限于特殊布置形式的裂纹.通过电流密度分布与弹性力学里反平面剪切问题的比拟,把分析含裂纹载流薄板内电流密度的分布等效于考虑相应的Ⅲ型裂纹问题,并比照Ⅲ型裂纹的应力强度因子来定义电流密度因子.而对于裂纹问题的处理可采用分布位错法这一断裂力学里便利有效的分析手段.由给出的算例可见,所提出的比拟解法可以方便精确地求解电流密度在裂尖附近的奇异分布,并有助于对这一奇异性在概念上的直观理解.

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Amorphous [Al-Si-O] coatings were deposited on aluminum alloy by plasma electrolytic oxidation (PEO). The process parameters, composition, micrograph, and mechanical property of PEO amorphous coatings were investigated. It is found that the growth rate of PEO coatings reaches 4.44 mu m/min if the current density is 0.9 mA/mm(2). XRD results show that the PEO coatings are amorphous in the current density range of 0.3-0.9 mA/mm(2). EDS results show that the coatings are composed of O, Si and At elements. SEM results show that the coatings are porous. Nano indentation results show that the hardness of the coatings is about 3 - 4 times of that of the substrate, while the elastic modulus is about the same with the substrate. Furthermore, a formation mechanism of amorphous PEO coatings was proposed.

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The temperature and stress field in a thin plate with collinear cracks interrupting an electric current field are determined. This is accomplished by using a complex function method that allows a direct means of finding the distribution of the electric current, the temperature and stress field. Temperature dependency for the heat-transfer coefficient, coefficient of linear expansion and the elastic modulus are considered. As an example, temperature distribution is calculated for an alloy (No. GH2132) plate with two collinear cracks under high temperature. Relationships between the stress, temperature, electric density and crack length are obtained. Crack trajectories emanating from existing crack are predicted by application of the strain energy density criterion which can also be used for finding the load carrying capacity of the cracked plate. (C) 2003 Elsevier Ltd. All rights reserved.

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给出了具有裂纹的无限大导电薄板通入电流时,裂纹尖端电流密度因子的表达式,由电流密度与温度场的关系式进一步导出了电流密度因子与温度场的表达式.通过算例,描述了电流密度因子在裂尖附近的分布规律,为电磁热效应裂纹止裂方法的应用打下了理论基础.

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GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.