1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

12 W high efficiency single frequency ring laser

Single-frequency output power of 12 W at 1064 nm is demonstrated. Pumped by a fiber-coupled diode laser, the Nd:YVO4 produces 58.6% of the slope efficiency with respect to absorbed pump power, and 52.7% of the optical-optical efficiency and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.11. To the best of our knowledge, this is the highest slope efficiency and optical-optical efficiency in single-frequency Nd:YVO4 ring laser. The slope efficiency of the single frequency laser is close to the limit of the efficiency. [GRAPHICS] output spectrum of the single-frequency Nd:YVO4 ring laser

A 20.1 W Solid-State Laser Pumped by 887 nm with High Efficiency and TEM00 Mode

High efficiency, TEM00 mode, high repetition rate laser pumped by 887 nm is reported. 20.1 W output laser emitting at 1064 nm is achieved in a 0.3 at % Nd-doped Nd:YVO4, which absorbs pumping light of 30.7 W at 887 nm. The opto-optic efficiency and the slope efficiency are 65.5 and 88.5%, respectively. The stable Q-switching operation worked well at 100 kHz and the beam quality is near diffraction-limit with M-2 factor measured as M-2 approximate to 1.2. And the pulse waveform is analyzed in this paper.

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 +/- A 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 +/- A 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.

808-nm fiber coupled module with a CW output power up to 130 W

A fiber coupled module is fabricated with integrating the emitting light from four laser diode bars into multimode fiber bundle. The continuous wave (CW) output power of the module is about 130 W with a coupling efficiency of around 80%. The output power is very stable after the temperature cycling and vibration test. No apparent power decrease has been observed as the device working continuously for 500 h.

5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.

4-W single transverse mode Yb3+-doped fiber laser pumped by 915-nm laser diode array

A cladding-pumped ytterbium-doped fiber laser is described in this letter. Using unusual pumping source with 915-nm wavelength, slope efficiency up to 75% with respect to absorbed input power and output power is obtained, a maximum output power of 4.006 W with fundamental mode is measured.

连续波500 W全固态Nd∶YAG激光器研究

研制了全国产化全固态半导体激光器(LD)抽运模块，Nd∶YAG激光输出功率达500 W。介绍了优化抽运模块结构参数的程度。从增益分布特性等方面，介绍了研究其输入-输出功率特性的实验装置，随着抽运功率的增加，Nd∶YAG激光输出以斜率效率47%线性增加，最大输出功率达到575 W，光-光转换效率达26.1%。采用He-Ne激光探测法实验测量了该抽运模块中的热透镜效应。通过测量热焦距，分析了其热透镜效应

W/Si,WSi2/Si和W/TiN纳米多层膜的成膜特性和热稳定性

国家自然科学基金

Total-internal-reflection fluorescence microscopy with W-shaped axicon mirrors

A scheme based on a W-shaped axicon mirror device for total-internal-reflection fluorescence microscopy (TIRFM) is presented. This approach combines the advantages of higher efficiency compared with traditional TIRFM, adjustable illumination area, and simple switching between wide-field and TIRF imaging modes. TIRF images obtained with this approach are free of shadow artifacts and of interference fringes. Example micrographs of fluorescently labeled polystyrene beads, of Convallaria majalis tissue, and of Propidium-iodide-labeled Chinese hamster ovary cells are shown, and the capabilities of the scheme are discussed. (C) 2010 Optical Society of America

低速多电荷态离子He~(2+)、O~(2+)和Ne~(2+)与W靶表面相互作用的动能电子发射研究

本文报道了He2+,O2+和Ne2+与W靶表面相互作用中的动能电子产额随离子入射速度变化的实验测量结果.结果表明:在本实验的入射速度范围内,对同一入射离子,动能电子产额随入射离子的速度增大而线性增加.基于动能电子发射的机理,我们分析了影响动能电子产额的因素,理论上得出动能电子产额与入射速度增长呈线性增加的关系,取得了实验上和理论上一致的结果.

~(189)W衰变纲图

用14.8 MeV中子同天然锇反应, 取道192O(n, α) 反应产生189W。通过放射化学分离流程, 从反应产物中分出W。用高纯Ge探测器完成放射性W样品γ射线单谱的测量。在189Re激发能级文献值的基础上并依据衰变和能级的关系以及189W衰变的γ射线能量和相对强度的实验数据, 给出了建议的189W衰变纲图。

~(189)W的衰变

给出了迄今为止实验中测得的新发现的189W的衰变数据——射线能量、半衰期和相对强度等,作为文献值;并将实验结果同文献值进行了比较。丰富了已测得的189W半衰期的文献值