Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.

双面二维硅微条探测器的沾污失效分析及修复；Contamination failure analysis and repairing for double side two dimensional silicon microstrip detectors

硅微条探测器通过微电子工艺制作,易因沾污导致性能下降甚至失效;裸露的键合引线,也易因机械力形成隐性或显性失效。对上述现象的研究可用于修复、维护探测器并在设计和工艺流程中改进其性能。本文通过光学、电气手段分析其结构和制作工艺流程,根据沾污性质在不同条件下清洗探测器,中测后根据芯片图形、封装方式和电气要求修复探测器,最后采用同位素α能谱测试修复效果。对一块沾污后失效(无法加载偏压)的硅微条清洗后在大气环境,N面接地,P面加载负偏压条件下进行了测试,结果显示:170 V全耗尽,平均漏电流2.94μA,5.486 MeV的α峰能量分辨率约1.28%。失效键合所在条的另一面各条能谱观测到假峰,键合修复后消除。因沾污失效的硅微条探测器经过合适的清洗、修复,部分可以恢复性能,但清洗对表面和结构有损伤,须谨慎。另外,键合失效后,因信号不能引出导致的电荷积累会通过电容效应影响其它灵敏区。文章提示,探测器应存放于洁净,恒温,低湿度,避光,避强电磁干扰的环境,以提高能量和位置分辨率,并增加工作稳定性,延长使用寿命。

Segmented HPGe平面型位置灵敏探测器阵列的γ成像分析；Gamma-ray imaging analysis by using array of segmented planar HPGe detectors

探测器位置分辨能力的高低是实现γ成像的一个重要指标.Segmented HPGe平面型位置灵敏探测器能够很好地给出γ射线与探测器晶体相互作用的作用点位置信息.利用由这种探测器组成的探测器阵列对~(22)Na标准源进行了γ成像实验.结果能够区分出标准源两个不同的摆放位置的细微差别,并与实际情况符合得很好.从而检验了Segmented HPGe平面型位置灵敏探测器的位置分辨能力.

Improvements in the selectivity of electrochemical detectors for liquid chromatography and flow injection analysis using the self-assembled n-alkanethiol monolayer-modified au electrode

4-Aminophenol (4-AP), paracetamol (PRCT), norepinephrine (NE), and dopamine (DA) (all somewhat hydrophobic compounds) were HPLC electrochemically detected while the signals from uric acid (UA) and ascorbic acid (AA) (both hydrophilic compounds at the pH studied) were minimized, taking advantage of the permselectivity of the self-assembled n-alkanethiol monolayer (C-10-SAM)-modified Au electrodes based on solute polarity, The effects of various factors, such as the chain length of the n-alkanethiol modifier, modifying time, and pH value, on the permeability of C-10-SAM coatings were examined, The calibration curves, linear response ranges, detection limits, and reproducibilities of the EC detector for 4-AP, PRCT, NE, and DA were obtained, The result shows that the EC detector can be applied in the chromatographic detection of 4-AP, PRCT, NE, and DA in urine, effectively removing the influence of UA and AA in high concentrations existing in biological samples. As a result, a great improvement in the selectivity of EC detectors has been achieved by using Au electrodes coated with neutral n-alkanethiol monolayer.

Investigation on Nonequlibrium Radiation and Relaxation Phenomena in Shock Tubes

The experimental results for the excited time of the nonequlibrium radiation and the ionization behind strong shock waves are presented. Using an optical multichannel analyzer, InSb infrared detectors and near-free-molecular Langmuir probes, the infrared radiation, the electron density of air and the nonequilibrium radiation spectra at different moments of the relaxation process in nitrogen test gas behind normal shock waves were obtained, respectively, in hydrogen oxygen combustion driven shock tubes.

Beam splitter entangler for light fields

We propose an experimentally feasible scheme to generate various types of entangled states of light fields by using beam splitters and single-photon detectors. Two beams of light fields are incident on two beam splitters respectively with each beam being asymmetrically split into two parts in which one part is supposed to be so weak that it contains at most one photon. We let the two weak output modes interfere at a third beam splitter. A conditional joint measurement on both weak output modes may result in an entanglement between the other two output modes. The conditions for the maximal entanglement are discussed based on the concurrence. Several specific examples are also examined.

Entanglement purification based on photonic polarization parity measurements

We present an entanglement purification protocol for photonic mixed entangled states based on the two-mode polarization nondemolition parity detectors. Without the use of the controlled-NOT (CNOT) operations, the efficiency of our protocol can nearly approach that of the CNOT protocol. The total successful probability of our protocol can be nearly enhanced to the quantity twice as large as that of the linear-optics-based protocol. Besides, our protocol adopts common photon detectors rather than the sophisticated single-photon detectors required in the linear-optics-based protocol.

Universal Greenberger-Horne-Zeilinger-state analyzer based on two-photon polarization parity detection

We present a universal analyzer for the three-particle Greenberger-Horne-Zeilinger (GHZ) states with quantum nondemolition parity detectors and linear-optics elements. In our scheme, all of the three-photon GHZ states can be discriminated with nearly unity probability in the regime of weak nonlinearity feasible at the present state of the art experimentally. We also show that our scheme can be easily extended to the analysis of the multi-particle GHZ states.

一种基于PSD器件的改进型角度测量方法

提出一种基于平行平板干涉仪的改进型角度测量方法。为了实现较大的偏转角度测量，该平行平板干涉仪引入了一位置探测系统。平面反射镜的引入提高了角度测量的分辨率。实验验证了可在近3度的范围内实现被测偏转角度的高精度测量。并且作为一位相调制型干涉仪，其小角位移测量实验的重复精度可达5.5×10^(-8)rad。

四区域法消除偏振棱镜缺陷对波片相位延迟测量的影响

在起偏器待测波片检偏器系统基础上提出一种四区域测量波片相位延迟量的方法。调整待测波片和检偏器的方位角,获得相应的四组光强值,通过线性运算得到待测波片的相位延迟量,完全消除了起偏器和检偏器不完全消光带来的误差。由于测量系统中不存在标准波片或其他相位调制元件,允许测量波长仅受偏振棱镜和探测器的限制,因此四区域法可适用于很大波长范围内的波片测量。以λ/4波片为例,理论分析了测量系统利用四区域测量法后的仪器误差为σ≤±3.49065×10-3rad(约0.2°),精度比原算法提高约1个数量级。实验验证了四区域法能有效提高系统精度。

显微成像荧光屏用无机闪烁单晶薄膜的研究进展

随着第三代同步辐射源的出现，由荧光屏和CCD耦合组成的、具有亚微米级空间分辨率、快速在线成像功能的探测器在医疗、安检、工业、科研等领域将会得到广泛应用．本文主要综述了成像荧光屏用材料的概况和发展趋势，重点阐述了闪烁单晶薄膜的研究及发展情况．

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films

4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics.