65 resultados para CHANGE OPTICAL DISK
Resumo:
Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
Resumo:
NiOx thin films were deposited by reactive DC-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content of 5%. Thermal annealing effects on optical properties and surface morphology of NiOx, films were investigated by X-ray photoelectron spectroscopy, thermogravimetric analysis, scanning electron microscope and optical measurement. The results showed that the changes in optical properties and surface morphology depended on the temperature. The surface morphology of the films changed obviously as the annealing temperature increased due to the reaction NiOx -> NiO + O-2 releasing O-2. The surface morphology change was responsible for the variation of the optical properties of the films. The optical contrast between the as-deposited films and 400 degrees C annealed films was about 52%. In addition, the relationship of the optical energy band gap with the variation of annealing temperature was studied. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
In a configuration of optical far-field scanning microscopy, super-resolution achieved by inserting a third-order optical nonlinear thin film is demonstrated and analyzed in terms of the frequency response function. Without the thin film the microscopy is diffraction limited; thus, subwavelength features cannot be resolved. With the nonlinear thin film inserted, the resolution is dramatically improved and thus the microscopy resolves features significantly smaller than the smallest spacing allowed by the diffraction limit. A theoretical model is established and the device is analyzed for the frequency response function. The results show that the frequency response function exceeds the cutoff spatial frequency of the microscopy defined by the laser wavelength and the numerical aperture of the convergent lens. The main contribution to the improvement of the cutoff spatial frequency is from the phase change induced by the complex transmission of the nonlinear thin film. Experimental results are presented and are shown to be consistent with the results of theoretical simulations.
Resumo:
Characteristics essential for the readout durability of a superresolution near-field structure (super-RENS) disk are studied experimentally by using a home-built optical measuring setup and atomic force microscope, based on a simplified PtOx super-RENS disk. The experimental results show that for a super-RENS disk with constant structure and materials, readout signals including transmittance and reflectance vary with changes in bubble shape and size, indicating that the readout durability of the disk has a strong dependence on bubble stability, which is closely related to the thickness of the cover layer, the recording power and readout power, and the mechanical properties of the dielectric layer. Based on our experimental results, the main direction for improving readout durability is also proposed. (c) 2008 Optical Society of America.
Resumo:
The heat generation in a flashlamp-pumped Nd:glass disk amplifier is studied by the simulation of the whole pumping process, which is based on the ray-tracing method. The results of temperature rise distribution as well as gain distribution are presented. The evolution of heat generation in disk during the pumping process is discussed in detail. Some main factors related with the thermal effect, such as the quantum efficiency, fluorescence lifetime, and pulse duration, are investigated through studying the ratio of the heat generation to energy storage in the gain medium. The influence of each parameter on heat generation is studied carefully, and the results provide ways to decrease the heat generation during the pumping process. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
Resumo:
Novel GeS2-Ga2S3-AgCl chalcohalide glasses had been prepared by melt-quenching technique, and the glass-forming region was determined by XRD, which indicated that the maximum of dissolvable AgCl was up to 65 mol%. Thermal and optical properties of the glasses were studied by differential scanning calorimetry (DSC) and Visible-IR transmission, which showed that most of GeS2-Ga2S3-AgCl glasses had strong glass-forming ability and broad region of transmission (about 0.45-12.5 mu m). With the addition of AgCl, the glass transition temperature, Tg decreases distinctly, and the short-wavelength cut-off edge (lambda(vis)) of the glasses also shifts to the long wavelength gradually. However, the glass-forming ability of the glass has a complicated evolutional trend depended on the compositional change. In addition, the values of the Vickers microhardness, H (v) , which decrease with the addition of AgCl, are high enough for the practical applications. These excellent properties of GeS2-Ga2S3-AgCl glasses make them potentially applied in the optoelectronic field, such as all-optical switch, etc.
Resumo:
We report on the optical property changes for Ce3+-doped Gd2SiO5 crystal irradiated by a femtosecond (fs) laser. Absorption spectra showed that Ce-related color centers were formed in this crystal after an 800 nm fs laser irradiation. The annealing temperature-dependence of the refractive index and absorption intensity changes have been investigated. Furthermore, a new way of writing overlapped gratings inside the crystal by use of birefringence of fs laser beam in this crystal was proposed. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
We report the space selective precipitation of Pd nanoparticles in Pd2+ -doped silicate glass by ultrashort laser pulses irradiation and further annealing. Absorption spectra, transmission electron microscopy, refractive index measurement and Z-scan technique demonstrated that metallic Pd nanoparticles were precipitated in the glass sample after irradiation by an 800-nm femtosecond laser and subsequent annealing at 600 degrees C. We discuss a refractive index change and nonlinear absorption that combines the precipitation of Pd nanoparticles. Crown Copyright (c) 2005 Published by Elsevier B.V. All rights reserved.
Resumo:
A simple and practical model is used to analyse the influence of substrate surface defect on the optical characteristics of a single-layer coating. A single-layer coating is prepared and its optical properties are fitted. Some explanations for the origin of the transition layer are presented. It is concluded that there is a transition layer forming between the substrate and coating, which is attributed to substrate surface defects, and its refractive index change is nearly of linearity.
Resumo:
A model for refractive index of stratified dielectric substrate was put forward according to theories of inhomogeneous coatings. The substrate was divided into surface layer, subsurface layer and bulk layer along the normal direction of its surface. Both the surface layer (separated into N-1 sublayers of uniform thickness) and subsurface layer (separated into N-2 sublayers of uniform thickness), whose refractive indices have different statistical distributions, are equivalent to inhomogeneous coatings, respectively. And theoretical deduction was carried Out by employing characteristic matrix method of optical coatings. An example of mathematical calculation for optical properties of dielectric coatings had been presented. The computing results indicate that substrate subsurface defects can bring about additional bulk scattering and change propagation characteristic in thin film and Substrate. Therefore, reflectance, reflective phase shift and phase difference of an assembly of coatings and substrate deviate from ideal conditions. The model will provide some beneficial theory directions for improving optical properties of dielectric coatings via substrate surface modification. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
As a technique to improve the ability of optical films to resist laser-induced damage (ARLID), laser preconditioning has been investigated broadly. In this paper, the laser preconditioning effect has been analyzed based on the defect-initialized damage mechanism that the author had put forward previously. Theoretical results show that an energy density scope (PEDS) exists in which the preconditioning laser can effectively improve the ARLID of optical films. In addition, when the energy density of the testing laser pulse is altered, the boundary of PEDS will change accordingly. Experimental results have verified these theoretical assumptions. PEDS will also become wider if the critical energy density of the preconditioning laser that can induce films' micro-damage increases, or the critical energy density of the preconditioning laser that can cause laser annealing decreases. In these cases, it is relatively easy to improve the ARLID of optical films. Results of the current work show great significance in enhancing the ARLID of optical films through the laser preconditioning technique. (C) 2008 Elsevier B.V. All rights reserved.
Resumo:
The electronic structure and optical gain of wurtzite ZnO nanowires are investigated in the framework of effective-mass envelope-function theory. We found that as the elliptical aspect ratio e increases to be larger than a critical value, the hole ground states may change from optically dark to optically bright. The optical gain of ZnO nanowires increases as the hole density increases. For elliptical wire with large e, the y-polarized mode gain can be several thousand cm(-1), while the x-poiarized mode gain may be 26 times smaller than the former, so they can be used as ultraviolet linearly polarized lasers. (C) 2008 American Institute of Physics.
Resumo:
We have studied the single-electron and two-electron vertically assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six energy levels of the single-electron quantum disks and the two lowest energy levels of the two-electron quantum disks in an axial magnetic field. The change of the magnetic field strongly modifies the electronic structures as an effective potential, leading to the splitting of the levels and the crossings between the levels. The effect of the vertical alignment on the electronic structures is discussed. It is demonstrated that the switching of the ground-state spin exists between S=0 and S=1. The energy difference DeltaE between the lowest S=0 and S=1 states is shown as a function of the axial magnetic field. It is also found that the variation of the energy difference between the lowest S=0 and S=1 states in the strong-B S=0 state is fairly linear. Our results provide a possible realization for a qubit to be fabricated by current growth techniques. (C) 2004 American Institute of Physics.