砷超富集植物蜈蚣草(Pteris vittata L.)中砷解毒机制的研究

砷是一种具有致癌、致畸、致突变的有毒元素，在地表的含量本来很低。然而，随着现代社会的发展和工业活动的增加导致砷污染日趋严重。土壤和水体中的砷污染可以通过食物链进入人体，对人类的健康造成极大的危害。植物修复是一种利用植物对污染物的超富集能力来清除或减低污染的新型环境生物技术。植物修复的实际应用依赖于超富集植物的发现和超富集机制的阐明，特别是砷解毒过程(砷的吸收、还原和区域化)的研究及相关基因的克隆。砷超富集植物蜈蚣草(Pteris vittata L.)中砷解毒机制的阐明将为砷污染的植物修复及新型工程植物的研发提供理论基础。 本论文以蜈蚣草为试材，针对蜈蚣草的砷解毒机制取得了如下研究进展： 1.以砷超富集植物蜈蚣草为材料，建立了一个适于研究蜈蚣草砷吸收和解毒机制的新系统—愈伤组织悬浮培养体系。首次证明蜈蚣草愈伤组织与其孢子体及配子体一样具有对砷的抗性和砷超富集的能力。 2.以蜈蚣草愈伤组织为材料，通过比较亚砷酸盐、砷酸盐和二甲基胂酸盐对蜈蚣草和拟南芥植物毒性的差异，表明砷的还原可能是蜈蚣草对砷解毒的重要机制之一而砷的甲基化对蜈蚣草的砷解毒作用甚微。 3.以蜈蚣草愈伤组织为材料，通过对砷在蜈蚣草愈伤组织细胞中的亚细胞定位，首次直接证明植物液泡对砷具有非常明显的区隔化作用。暗示区隔化作用在蜈蚣草对砷的解毒过程中发挥着重要的作用。 4.通过测定蜈蚣草愈伤组织对不同化学态的砷处理下抗氧化物质的变化发现酸溶性巯基在蜈蚣草砷解毒中也发挥着重要作用。 5.以蜈蚣草愈伤组织为材料，发现磷和砷的吸收在高浓度范围下（﹥0.2 mM）存在明显的协同效应。对蜈蚣草高亲和磷酸盐转运蛋白基因－PvPHT基因功能的初步分析则表明PvPHT参与了蜈蚣草对磷和砷的吸收过程。

利用多基因转化技术培育重金属超富集植物的研究

植物耐受和积累重金属的细胞学基础是植物细胞内存在一些能够络合和区隔化金属离子的机制。细胞中络合重金属离子最重要的小肽分子是谷胱甘肽(GSH)和植物络合素(PCs)，而YCFⅠ基因编码的ABC-type 液泡膜转运蛋白负责将重金属离子及其与上述小肽形成的复合物转运进入细胞液泡中，即将重金属离子区隔化。植物细胞中合成GSH 和PCs 的关键酶分别是γ－谷氨酰氨半胱氨酸合成酶(GSHⅠ)和植物络合素合酶(PCS)，他们的编码基因分别为GSHⅠ 和PCS 。此外定位于细胞质中的小囊泡上且对二价阳离子的吸收和转运有重要作用的SMF2 蛋白可能也参与重金属离子的区隔化过程。 为了改良植物使之能够应用于清除土壤中的重金属污染，本研究基于植物耐受和积累重金属的细胞学机制，分别将酿酒酵母来源的GSHⅠ、YCFⅠ和SMF2 基因，以及GSHⅠ、YCFⅠ基因分别与镉抗性植物大蒜来源的AsPCSⅠ 基因构建为不同的基因组合表达载体，转化模式植物拟南芥。对不同组合转基因拟南芥的功能分析表明： 1、酵母来源的基因GHSⅠ、YCFⅠ分别在拟南芥中异源超表达可以在一定程度上提高转基因拟南芥耐受、积累重金属的能力;其中GSHⅠ基因在拟南芥超表达可以提高转基因拟南芥合成GSH 的能力，转基因拟南芥细胞中GSH 浓度比野生型增加。 2、将GSHⅠ基因和来自大蒜的AsPCSⅠ基因同时在拟南芥中超表达能够显著提高转基因拟南芥耐受和积累重金属的能力，且积累和耐受能力显著高于分别转GSHⅠ或AsPCSⅠ的单价转基因株系;将YCFⅠ基因和AsPCSⅠ基因同时在拟南芥中超表达也能够显著提高转基因拟南芥耐受和积累重金属的能力，且积累和耐受能力显著高于分别转YCFⅠ或AsPCSⅠ的单价转基因株系。两种双价转基因株系GSHⅠ＋AsPCSⅠ和YCFⅠ＋AsPCSⅠ在积累和耐受不同重金属胁迫方面没有明显差别。 3、将SMF2 基因在拟南芥中异源表达，研究了植物中囊泡转运是否参与了重金属离子的吸收和区隔化过程。研究结果表明：超表达SMF2 基因的拟南芥尽管耐受重金属胁迫的能力与野生型没有明显差异，但其积累重金属的能力显著提高。这为证明植物中小囊泡转运参与重金属转运提供了间接证据。 综上所述，同时将多个参与植物对重金属络合、转运和区隔化作用的关键基因在转基因植物中表达可以提高植物耐受和积累重金属的能力，是培育可用于植物修复的新型工程植物的值得探索的途径。本论文所设计和构建的双价基因组合及其对目标植物的转化，在环境重金属污染的清除中有潜在的应用价值。

蜈蚣草(Pteris vittata L.)对砷和铜复合污染的响应及生理机制研究

随着现代工农业的发展，环境污染日益加剧。农用土壤作为我们赖以生存的基础，大量含砷（Arsenic, As）和铜（Copper, Cu）的化肥和农药的应用造成As、Cu及其他重金属的复合污染日趋加重。蜈蚣草作为一种天然的砷超富集植物，在清除土壤砷污染的应用中备受人们关注。然而，目前的研究多集中在蜈蚣草对单一砷污染的吸收、转运和超富集等方面，几乎没有对土壤复合污染尤其是As、Cu复合污染的的响应和生理机制的研究。本文针对As、Cu复合污染的现实，研究了不同浓度砷、铜复合污染胁迫对蜈蚣草生长和发育的影响，探讨了蜈蚣草对砷、铜复合污染抗性和富集的生理生化机制，以期为蜈蚣草在植物修复复合污染的应用提供理论基础。 主要研究结果如下： 1、以砷超富集植物蜈蚣草成熟孢子为外植体材料，建立了一套成熟的蜈蚣草孢子植株再生体系，包括配子体分化和愈伤组织分化两条途径。为蜈蚣草的生理生化机制以及将来的遗传转化奠定了基础。同时证明了蜈蚣草愈伤组织与其孢子体及配子体一样具有对砷的抗性和超富集特性以及铜抗性。 2、以组培的蜈蚣草孢子体为材料，通过比较高浓度砷、低浓度砷以及高浓度铜、低浓度铜的相互组合对孢子体毒性的差异，表明适度浓度砷可以增强蜈蚣草对铜的抗性，但高、低浓度铜都不能增强砷的抗性。同时测定了不同浓度砷、铜处理对蜈蚣草体内砷和铜的吸收分配情况，探讨了蜈蚣草对砷铜复合污染土壤的植物修复的潜在可能性 。 3、以蜈蚣草组培的配子体为材料，研究了蜈蚣草对不同浓度铜砷复合处理的生理生化响应。结果表明砷的加入可以缓解铜对蜈蚣草配子体的植物毒性，而铜的加入并没有缓解砷的植物毒性。而且随着砷浓度的提高可以显著降低铜在配子体中的积累，显著提高了配子体细胞生存能力，降低了配子体细胞膜透性，且可以改变铜砷在配子体中亚细胞定位，暗示砷对铜的积累具有拮抗作用。同时观察到适度的铜也可以降低砷在孢子体根中的积累，对砷在叶柄以及羽叶中的积累有一定的降低作用，但并不显著。 4、以蜈蚣草愈伤组织为材料，研究了蜈蚣草愈伤组织对砷和铜复合污染胁迫的生理生化响应，结果表明适度的砷可以显著提高蜈蚣草愈伤组织中抗氧化酶系统，进而提高抵御铜胁迫引起的ROS胁迫的能力而显著缓解铜对蜈蚣草愈伤组织的毒性。低浓度砷加入显著诱导POD、CAT活性的升高，提高了蜈蚣草愈伤组织抵抗ROS胁迫能力，尤其是POD与生长呈显著的正相关;SOD活性在0-1.0 mM Na3AsO4条件下并没有显著增加，暗示在相对较低的砷胁迫和铜胁迫条件下POD对蜈蚣草愈伤组织解毒起到重要作用。同时在高砷或者高铜胁迫条件下GR活性和GPx活性与之的相关系数可以达到显著水平，这说明高砷或者高铜胁迫条件下GR和GPx在蜈蚣草解毒中起到重要作用。 5、首次证明NO可能参与砷缓解铜对蜈蚣草的植物毒性的过程。发现加入0.2 μM NO加入并没有显著改善蜈蚣草砷的植物毒性，清除蜈蚣草愈伤组织内的NO后，显著增强了砷胁迫条件下对蜈蚣草愈伤组织生长的抑制作用。同时加入NO后却显著改善了蜈蚣草铜胁迫条件下愈伤组织的生长。测定了As、Cu处理后蜈蚣草愈伤组织内源NO含量的变化以及CAT抗ROS能力的变化，结果表明蜈蚣草愈伤组织NO合成显著受As诱导，但不受铜的诱导，同时内源NO浓度的升高，伴随着抵抗ROS胁迫的抗氧化的CAT活性升高。暗示砷可能是通过诱导内源NO浓度升高提高蜈蚣草愈伤组织抵抗ROS胁迫能力来缓解对铜的植物毒性。

Effects of arsenate on the growth and microcystin production of Microcystis aeruginosa isolated from Taiwan as influenced by extracellular phosphate

Arsenic pollution and eutrophication are both prominent issues in the aquaculture ponds of Taiwan. It is important to study the effects of arsenic on algal growth and toxin production in order to assess the ecological risk of arsenic pollution, or at least to understand naturally occurring ponds. The sensitivity of algae to arsenate has often been linked to the structural similarities between arsenate and phosphate. Thus, in this study we examined the effects of arsenate (10(-8) to 10(-4) M) on Microcystis aeruginosa TY-1 isolated from Taiwan, under two phosphate regimes. The present study showed that M. aeruginosa TY-1 was arsenate tolerant up to 10(-4) M, and that this tolerance was not affected by extracellular phosphate. However, it seems that extracellular phosphate contributed to microcystin production and leakage by M. aeruginosa in response to arsenate. Under normal phosphate conditions, total toxin yields after arsenate treatment followed a typical inverted U-shape hormesis, with a peak value of 2.25 +/- 0.06 mg L-1 in the presence of 10(-7) M arsenate, whereas 10(-8) to 10(-6) M arsenate increased leakage of similar to 75% microcystin. Under phosphate starvation, total toxin yields were not affected by arsenate, while 10(-6) and 10(-5) M arsenate stimulated microcystin leakage. It is suggested that arsenate may play a role in the process of microcystin biosynthesis and excretion. Given the arsenic concentrations in aquaculture ponds in Taiwan, arsenate favors survival of toxic M. aeruginosa in such ponds, and arsenate-stimulated microcystin production and leakage may have an impact on the food chain.

Effects of Arsenate on Microcystin Content and Leakage of Microcystis Strain PCC7806 Under Various Phosphate Regimes

Both arsenic pollution and eutrophication are prominent environmental issues when considering the problem of global water pollution. It is important to reveal the effects of arsenic species on cyanobacterial growth and toxin yields to assess ecological risk of arsenic pollution or at least understand naturally occurring blooms. The sensitivity of cyanobacteria to arsenate has often been linked to the structural similarities of arsenate and phosphate. Thus, we approached the effect of arsenate with concentrations from 10(-8) to 10(-4) M on Microcystis strain PCC7806 under various phosphate regimes. The present study showed that Microcystis strain PCC7806 was arsenate tolerant up to 10(-4) M. And such tolerance was without reference to both content of intra- and extra-cellular phosphate. It seems that arsenate involved the regulation of microcystin synthesis and cellular polyphosphate contributed to microcystin production of Microcystis responding to arsenate, since there was a positive linear correlation of the cellular microcystin quota with the exposure concentration of arsenate when the cells were not preconditioned to phosphate starvation. It is presumed that arsenate could help to actively export microcystins from living Microcystis cells when preconditioned to phosphate starvation and incubated with the medium containing 1 mu M phosphate. This study firstly provided evidence that microcystin content and/or release of Microcystis might be impacted by arsenate if it exists in harmful algal blooms. (C) 2008 Wiley Periodicals, Inc. Environ Toxicol 24:97 94, 2009.

Environmental threats to children's health in Southeast Asia and the Western Pacific

The Southeast Asia and Western Pacific regions contain half of the world's children and are among the most rapidly industrializing regions of the globe. Environmental threats to children's health are widespread and are multiplying as nations in the area undergo industrial development and pass through the epidemiologic transition. These environmental hazards range from traditional threats such as bacterial contamination of drinking water and wood smoke in poorly ventilated dwellings to more recently introduced chemical threats such as asbestos construction materials; arsenic in groundwater; methyl isocyanate in Bhopal, India; untreated manufacturing wastes released to landfills; chlorinated hydrocarbon and organophosphorous pesticides; and atmospheric lead emissions from the combustion of leaded gasoline. To address these problems, pediatricians, environmental health scientists, and public health workers throughout Southeast Asia and the Western Pacific have begun to build local and national research and prevention programs in children's environmental health. Successes have been achieved as a result of these efforts: A cost-effective system for producing safe drinking water at the village level has been devised in India; many nations have launched aggressive antismoking campaigns; and Thailand, the Philippines, India, and Pakistan have all begun to reduce their use of lead in gasoline, with resultant declines in children's blood lead levels. The International Conference on Environmental Threats to the Health of Children, held in Bangkok, Thailand, in March 2002, brought together more than 300 representatives from 35 countries and organizations to increase awareness on environmental health hazards affecting children in these regions and throughout the world. The conference, a direct result of the Environmental Threats to the Health of Children meeting held in Manila in April 2000, provided participants with the latest scientific data on children's vulnerability to environmental hazards and models for future policy and public health discussions on ways to improve children's health. The Bangkok Statement, a pledge resulting from the conference proceedings, is an important first step in creating a global alliance committed to developing active and innovative national and international networks to promote and protect children's environmental health.

Extremely low density InAs quantum dots with no wetting layer

Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy, The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4x10(6) cm(-2)) are formed by depositing 0.65 monolayers (ML) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence line-width of about 24 meV is insensitive to cryostat temperatures from 10 K to 250 K. All measurements indicate that there is no wetting layer connecting the QDs.

Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy

Optical transient current spectroscopy (OTCS) has been used to investigate defects in the low-temperature-grown GaAs after postgrowth rapid thermal annealing (RTA). Two samples A and B were grown at 220 degreesC and 360 degreesC on (001) GaAs substrates, respectively. After growth, samples were subjected to 30s RTA in the range of 500-800 degreesC. Before annealing, X-ray diffraction measurements show that the concentrations of the excess arsenic for samples A and B are 2.5 x 10(19) and 1 x 10(19) cm(-3), respectively. It is found that there are strong negative decay signals in the optical transient current (OTC) for the annealed sample A. Due to the influence of OTC strong negative decay signals, it is impossible to identify deep levels clearly from OTCS. For a comparison, three deep levels can be identified for sample B before annealing. They are two shallower deep levels and the so-called As-Ga antisite defect. At the annealing temperature of 600 degreesC, there are still three deep levels. However, their structures are different from those in the as-grown sample. OTC strong negative decay signals are also observed for the annealed sample B. It is argued that OTC negative decay signals are related to arsenic clusters. (C) 2000 Elsevier Science B.V. All rights reserved.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

A Raman scattering study of GaAs: As films lifted off GaAs substrate

We performed Raman scattering investigations on low-temperature-grown (LTG) films of GaAs that had been lifted off the GaAs substrate. The Raman measurements unambiguously show the effects of excess arsenic on phonon scattering from LTG films of GaAs. The larger downwards shift of the LO phonon frequency for unannealed free-standing films is explained by invoking the elimination of mismatch strain. The Raman signal due to precipitates of elemental arsenic in the annealed GaAs : As films is determined. It is confirmed that the arsenic clusters formed by rapid thermal annealing are mainly amorphous, giving rise a broad Raman peak in the range 180-260 cm(-1).

Self-assembled GaAs quantum rings by MBE droplet epitaxy

Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 C to 300 C under As flux (BEP) of about 1.0 x 10(-6) Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

Stoichiometric defects in semi-insulating GaAs

The influences of arsenic interstitials and dislocations on the lattice parameters of undoped semi-insulating (SI) GaAs single crystals were analyzed. It was shown that the dislocations in such crystals serve as effective gettering sites for arsenic interstitials due to the deformation energy of dislocations. The average excess arsenic in GaAs epilayers grown by molecular-beam epitaxy (MBE) at low temperatures (LT) is about 1%, and the lattice parameters of these epilayers are larger than those of liquid-encapsulated Czochralski-grown (LEG) SI-GaAs by about 0.1%. The atomic ratio, [As]/([Ga] + [As]), in SI-GaAs grown by low-pressure (LP) LEC is the nearest to the strict stoichiometry compared with those grown by high-pressure (HP) LEC and vertical gradient freeze (VGF). After multiple wafer annealing (MWA), the crystals grown by HPLEC become closer to be strictly stoichiometric.