White electroluminescence from polyfluorene chemically doped with 1,8-napthalimide moieties

An efficient white light-emitting polymer was developed with blue polyfluorene (PFO) chemically doped with orange fluorescent 1, 8-naphthalimide moieties. The emission spectrum can be easily tuned by varying the content of 1, 8-naphthalimide moieties. A white polymeric light-emitting diode (WPLED) with a structure of indium tin oxide (ITO)/the complex of (3,4-ethylenedioxythiophene) and polystyrene sulfonic acid (PEDOT)/polymer/Ca/Al showed a current efficiency of 5.3 cd/A and a power efficiency of 2.8 Lm/W at 6 V with the Commission Internationale de L'Eclairage (CIE) coordinates at (0.25,0.35). Moreover, the WPLED from the copolymer showed a very stable white light emission at different driving voltage and brightness. The CIE coordinates of the WPLED were (0.25, 0.35), (0.26, O.36), and (0.26, 0.36) under driving voltages of 6, 8, and 10 V, corresponding to the brightness of 82, 3555, and 7530 cd/m(2), respectively. This approach for realization of white light emission is promising over the polymer blending system in terms of both efficiency and color stability.

Highly efficient pure-white-light-emitting diodes from a single polymer: Polyfluorene with naphthalimide moieties

Light-emitting diodes exhibiting efficient pure-white-light electroluminescence have been successfully developed by using a single polymer: polyfluorene derivatives with 1,8-naphthalimide chromophores chemically doped onto the polyfluorene backbones. By adjusting the emission wavelength of the 1,8-naphthalimide components and optimizing the relative content of 1,8-naphthalimide derivatives in the resulting polymers, white-light electroluminescence from a single polymer, as opposed to a polymer blend, has been obtained in a device with a configuration of indium tin oxide/poly(3,4-ethyleiledioxythiophene)(50 nm)/polymer(80 nm)/Ca(10 nm)/Al(100 nm). The device exhibits Commission Internationale de I'Eclairage coordinates of (0.32,0.36), a maximum brightness of 11900 cd m(-2), a current efficiency of 3.8 cd A(-1), a power efficiency of 2.0 lm W-1. an external quantum efficiency of 1.50 %, and quite stable color coordinates at different driving voltages, even at high luminances of over 5000 cd m(-2).

Green electroluminescent polyfluorenes containing 1,8-naphthalimide moieties as color tuner

A series of copolymers (CNPFs) containing low-band-gap 1,8-naphthalimide moieties as color tuner was prepared by a Yamamoto coupling reaction of 2,7-dibromo-9,9-dioctylfluorene (DBF) and different amount of 4-(3,6-dibromocarbazol-9-yl)-N-(4'-tert-butyl-phenyl)-1,8-naphthalimide (Br-CN) (0.05-1 mol% feed ratio). The light emitting properties of the resulting copolymers showed a heavy dependence on the feed ratio. In photoluminescence (PL) studies, an efficient color tuning through the Forster energy transfer mechanism was revealed from blue to green as the increase of Br-CN content, while in electroluminescence (EL) studies, the color tuning was found to go through a charge trapping mechanism. It was found that by introduction of a very small amount of Br-CN (0.1-0.5 mol%) into polyfluorene, the emission color can be tuned from blue to pure green with Commission International de l'Echairage (CIE) coordinates being (0.21, 0.42) and (0.21, 0.48). A green emitting EL single-layer device based on CNPF containing 0.1 mol% of Br-CN showed good performances with a low turn-on voltage of 4.2 V, a brightness of 9104 cd/m(2), the maximum luminous efficiency of 2.74 cd/A and the maximum power efficiency of 1.51 lm/W.

Zinc-based light-emitting materials containing oxadiazole moieties

Two oxadiazole-based zinc complexes containing naphthalene moiety with different coordination site are synthesized and characterized. Their thermal stability, photoluminescent and electroluminescent properties are investigated. The resulting complexes have good thermal stability and show bright blue fluorescence in the solid state. Their electroluminscent wavelengths are dependent on the coordination site of naphthalene moieties.

A new alpha-Keggin type polyoxometalate coordinated to four silver complex moieties: {PW9V3O40[Ag(2,2 '-bipy)](2)[Ag-2(2,2 '-bipy)(3)](2)}

A new polyoxometalate derivative {PW9V3O40[Ag(2,2'-bipy)](2)[Ag-2(2,2'-bipy)(3)](2)} 1 has been hydrothermally synthesized and structurally characterized by the single crystal X-ray diffraction. X-Ray analysis showed that both [Ag(2,2'-bipy)](+) and [Ag-2(2,2'-bipy)(3)](2+) units are supported on the alpha-Keggin polyoxoanion [PW9V3O40](6-) via the surface bridging oxygen atoms. 1 represents the first alpha-Keggin type polyoxoanion coordinated with four transition metal complex moieties, which further acts as a neutral molecular units for the construction of an interesting three-dimensional supramolecular framework.

Optically active poly(amide-imide)s containing axially dissymmetric 1,1 '-binaphthyl moieties

Novel optically active aromatic poly(amide-imide)s (PAIs) were prepared from newly synthesized 2,2'-bis(3,4-dicarboxybenzamido)-1,1'-binaphyl dianhydride ((+/-)-, (S)-, and (R)-BNDADA). PAIs based on dianhydride monomers with different ee % were investigated with respect to their structures and chiroptical properties. These polymers were highly soluble in polar aprotic solvents such as N,N-dimethylacetamide, N-methyl-2-pyrrolidone, pyridine, etc., and showed high glas s transition temperatures of 287-290 degrees C and 5% weight loss temperatures of 450-465 degrees C in nitrogen. Optically active PAIs exhibited high specific rotations, excellent optical stabilities, and a dependence of optical activities on temperature. Investigations on chiroptical properties indicated that chiral conformation was possessed by optically active PAIs. (C) 1999 John Wiley & Sons, Inc.

Synthesis and properties of optically active poly(amide-imide)s containing axially dissymmetric 1,1 '-binaphthyl moieties

Novel optically active aromatic poly(amide-imide)s (PAIs) containing 1,1'-binaphthyl-2,2'-diyl units in the main chain were prepared by polycondensation reactions of newly synthesized dianhydride, 2,2'-bis(3,4-dicarboxylzenzamido)-1,1'-binaphthyl dianhydride[(S)-BN-DADA and (+/-)-BNDADA], with diamines, The properties of the resulted PAIs were fully characterized by a combination of investigations on inherent viscosity, thermal properties(DSC and TGA), specific rotation, CD and UV-Vis absorbance. These PAIs showed good solubilities, thermal properties and optical stabilities. Interesting UV-Vis absorption behavior of films casted from these PAIs was observed and analyzed.

Synthesis and characterization of poly(amide imide)s containing cyclohexylidene moieties with bulky substituents

Novel poly(amide imide)s (PAI) containing alkyl-substituted cyclohexylidene moieties were synthesized by conventional polycondensation of trimellitic anhydride chloride with novel aromatic diamines followed by chemical imidization using acetic anhydride and pyridine. The inherent viscosities of the resulting PAIs are relatively high and range from 71 to 112 mt g(-1). The prepared PAIs show excellent thermal stability and good solubility. The glass transition temperatures (T-g) measured by DSC are observed in the range of 312-342 degrees C. Furthermore, all the polymers are readily soluble in less hygroscopic organic solvents like cyclohexanone, gamma-butyrolactone as well as aprotic polar solvents.

Morphology and structure of poly(aryl ether ketone ketone) containing isophthaloyl moieties crystallized from dilute solution

Spherulites and lamellar single crystals of poly(aryl ether ketone ketone) containing isophthaloyl moieties (PEKK(I)) were obtained from dilute alpha-chloronaphthalene solution. The morphology and structure of the spherulites and single crystals were studied by electron microscopy and electron diffraction. The spherulites were found to consist of elongated lamellar branches that grow with the b crystallographic axis in the radial direction. Single crystals possess a similar habit, with b parallel to the long axis, a transverse, and c perpendicular to the lamellae plane. High-resolution images of the PEKK(I) crystals which show the perfection of and defects in the crystals, were obtained, and many defects or dislocations a,ere observed. (C) 1997 Elsevier Science Ltd.

ARYLIDENE COPOLYETHER SULFONES .2. SYNTHESIS END CHARACTERIZATION OF SOME NEW COPOLYETHER SULFONES CONTAINING DIBENZYLIDENE CYCLOHEXANONE MOIETIES

New copolyether sulfones containing 2,6-bis(p-oxo-benzylidene)cyclohexanone and 2,6-bis(o,p-dioxo-benzylidene)cyclohexanone moieties were prepared in the conventional literature manner by condensing the dipotassium salts of 2,6-bis(p-hydroxybenzylidene)cyclohexanone (III), 2,6-bis(o,p-dihydroxybenzylidene)-cyclohexanone (V), and 2,2-bis(p-hydroxyphenyl)propane (Bisphenol A, VII) with 4,4'-dichlorodiphenyl sulfone (VI), or by condensing the dipotassium salts of III and VII with a new benzylidene cyclohexanone sulfone macromer (X). Finally, the polycondensation reaction of sulfonyl bis(p-benzaldehydeoxo-p-phenylene) (IX) with cyclohexanone leads to an unsaturated copolymer (XVI). The resulting copolyether sulfones were confirmed by IR, H-1-NMR, viscometry, elemental analysis, thermooptical (TOA), x-ray, and thermogravimetric (TGA) measurements.

ARYLIDENE COPOLYETHER SULFONES .1. SYNTHESIS AND CHARACTERIZATION OF SOME NEW COPOLYETHER SULFONES CONTAINING DIBENZYLIDENE CYCLOPENTANONE MOIETIES

New copolyether sulfones containing 2,5-bis(4-oxo-benzylidene)-cyclopentanone moieties were prepared in the conventional literature manner by condensing the dipotassium salts of 2,5-bis(4-hydroxybenzylidene)cyclopentanone (I) and 2,2-bis(4-hydroxyphenyl)propane (Bisphenol A, III) with 4,4'-dichlorodiphenyl sulfone (II), or by condensing the dipotassium salts of I with chlorine-terminated Bisphenol A-4,4'-dichlorodiphenylsulfone copolymers (V). The resulting copolyether sulfones were confirmed by IR, viscometry, DSC measurements, thermooptical analysis (TOA), and thermogravimetric analysis (TGA).

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Large three-photon absorption cross-section in a novel class of bis-(N-carbazolyl) fluorene derivatives

Two novel symmetrical charge transfer fluorene derivatives (abbreviated as BCZF and BVCZF) with carbazole end-group as the donor moieties have been synthesized. Three-photon absorption cross-sections of these two compounds have been determined by using a Q-switched Nd:YAG laser pumped with 38 ps pulses at 1064 nm in DMF. The measured 3PA cross-sections are 140 x 10(-78) and 400 x 10(-78) cm(6) s(2) for BCZF and BVCZF, respectively. The geometries, electronic structures and electronic spectra of these two compounds are systematically studied by AM1 and ZINDO/S methods. On the basis of correct UV-vis spectra, the influence of different molecular structure on three-photon absorption cross-sections is discussed micromechanically. (C) 2005 Elsevier B.V. All rights reserved.

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical vapour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at similar to 3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.