A study on the minority carrier diffusion length in n-type GaN films

The minority carrier diffusion length of n-type GaN films grown by metalorganic chemical vapor deposition (MOCVD) has been studied by measuring the surface photovoltaic (PV) spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.

Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length

In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. (c) 2006 Optical Society of America.

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

We investigate the effects of lightly Si doping on the minority carrier diffusion length in n-type GaN films by analyzing photovoltaic spectra and positron annihilation measurements. We find that the minority carrier diffusion length in undoped n-type GaN is much larger than in lightly Si-doped GaN. Positron annihilation analysis demonstrates that the concentration of Ga vacancies is much higher in lightly Si-doped GaN and suggests that the Ga vacancies instead of dislocations are responsible for the smaller minority carrier diffusion length in the investigated Si-doped GaN samples due to the effects of deep level defects. (c) 2006 American Institute of Physics.

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.

A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation

Compared with the ordinary adaptive filter, the variable-length adaptive filter is more efficient (including smaller., lower power consumption and higher computational complexity output SNR) because of its tap-length learning algorithm, which is able to dynamically adapt its tap-length to the optimal tap-length that best balances the complexity and the performance of the adaptive filter. Among existing tap-length algorithms, the LMS-style Variable Tap-Length Algorithm (also called Fractional Tap-Length Algorithm or FT Algorithm) proposed by Y.Gong has the best performance because it has the fastest convergence rates and best stability. However, in some cases its performance deteriorates dramatically. To solve this problem, we first analyze the FT algorithm and point out some of its defects. Second, we propose a new FT algorithm called 'VSLMS' (Variable Step-size LMS) Style Tap-Length Learning Algorithm, which not only uses the concept of FT but also introduces a new concept of adaptive convergence slope. With this improvement the new FT algorithm has even faster convergence rates and better stability. Finally, we offer computer simulations to verify this improvement.

EFFECTIVE CAVITY LENGTH IN VERTICAL-CAVITY SURFACE-EMITTING LASER

Effective cavity length method is introduced to vertical cavity surface emitting laser for characterizing some properties, including reflectivity FWHM, mode wavelength and threshold gain. Some experiment results are demonstrated, showing the agreement of theoretical analysis with experiment.

金黄色葡萄球菌肠毒素C2的结构特征与生物学功能研究

通过PCR技术对Staphylococcal enterotoxin C2(SEC2)的氨基端和羧基端部位进行删除突变。研究结果显示删除羧基端77个氨基酸对SEC2超抗原和致热活性没有显著影响，但更进一步的删除导致SEC2活性显著降低。而少量氨基端残基删除则可导致SEC2超抗原活性显著降低，说明SEC2超抗原活性主要集中于其氨基端部位。以上研究结果也表明SEC2分子的完整性并不是其超抗原活性所必需的。 对二硫环及Zn结合位点配位组氨酸残基在SEC2分子中的生物学功能进行研究。以定点突变技术构建SEC2二硫环突变蛋白，从而干扰二硫键的形成。研究结果表明干扰二硫环形成对SEC2的超抗原、催吐和致热等活性均有显著影响，说明二硫环在维持SEC2生物学活性方面具有重要作用。此外，针对Zn结合位点配位组氨酸残基的研究结果显示突变118位和122位组氨酸后对SEC2的超抗原活性没有有显著影响，而47位组氨酸的突变导致SEC2分子的超抗原活性显著降低。动物实验结果显示分别突变118位和122位组氨酸残基后均导致SEC2分子催吐及热源活性显著降低，而47位组氨酸突变仍具有较高的催吐和致热活性。说明Zn结合位点配位组氨酸残基在SEC2的催吐、致热和超抗原活性中扮演了重要的作用，并进一步揭示肠毒素诱导的超抗原和致热活性之间没有明显的相关性。 以Leu及Glu分别替代20和22位氨基酸残基后SEC2超抗原活性有显著提高，并将具有减毒作用的组氨酸位点突变引入上述活性增强的SEC2突变，从而构建减毒突变蛋白。结果显示引入118和122位组氨酸双突变后突变蛋白保留了与SEC2相当的超抗原和抗肿瘤活性，但与SEC2相比致热活性有显著下降，为减毒SEC2超抗原药物的开发提供了可能性。 为探索金黄色葡萄球菌的体内基因突变方法，本研究对金黄色葡萄球菌基因组中的α-溶血毒素基因进行敲除。首先构建同源重组质粒pMHL-α，经金黄色葡萄球菌RN4220修饰后再通过原生质体转入金黄色葡萄球菌SM-01。含重组质粒pMHL-α的金黄色葡萄球菌SM-01在42℃诱导条件下培养多代，最终筛选出α-溶血毒素基因缺失菌株。经序列分析和血平板溶血实验结果证实最终获得产SEB金黄色葡萄球菌α-HL缺失菌株。为构建产减毒肠毒素的金黄色葡萄球菌基因工程菌株提供了一定的理论基础和方法。