坛紫菜光合作用对重碳酸盐的利用

为了探讨坛紫菜（POrphyra haitanensis）在海水中进行光合作用时的无机碳源,对其叶状体的碳酸酥酶（CA）和光合放氧特性进行了测定.CA在坛紫菜的细胞外和细胞内都有酶活性.在 pH 8.2或川刀的海水中,CA抑制剂乙酞吐磺胺（acetazolandde,AZ）或已氧苯并喷吐磺胺（6-ethoxyzolandde,EZ）对坛紫菜光合放氧速率有强烈的抑制作用,且 EZ比 AZ抑制作用更大.在 pH 8二海水中观测的光合放氧速率远大于海水中HCO。一离子的理论脱水速率.另外,坛紫菜具有很高的PH补

盐泽螺旋藻(Spirulina subsalsa)藻胆体的分离和特性

采用一种简便而快速的方法分离了盐泽螺旋藻的藻胆体。藻胆体的最大吸收波长位于618 nm,室温下荧光反射峰位于677～678 nm。利用7～15％SDS—聚丙烯酸胺梯度凝胶板状电泳,可分出三条有色多肽,其中藻蓝蛋白的α亚单位与别藻蓝蛋白的α亚单位几乎重叠,不易区分;另有分子量为117,99,53,49,27,24.5和14kD的七条无色多肽。117和 99kD多肽可能联结藻胆体和类囊体,并作为末端能量受体,而14kD多肽多为“核”亚结构的组分,其余的可能为“棒”亚结构内和“核”“棒”亚结构间的联结蛋白。

Feasibility of cyanobacterial inoculation for biological soil crusts formation in desert area

Practical testing of the feasibility of cyanobacterial inoculation to speed up the recovery of biological soil crusts in the field was conducted in this experiment. Results showed that cyanobacterial and algal cover climbed up to 48.5% and a total of 14 cyanobacterial and algal species were identified at the termination of inoculation experiment; biological crusts' thickness, compressive and chlorophyll a content increased with inoculation time among 3 years; moss species appeared in the second year; cyanobacterial inoculation increased organic carbon and total nitrogen of the soil; total salt, calcium carbonate and electrical conductivity in the soil also increased after inoculation. Diverse vascular plant communities composed of 10 and 9 species are established by cyanobacterial inoculation on the windward and leeward surface of the dunes, respectively, after 3 years. The Simpson index for the above two communities are 0.842 and 0.852, while the Shannon-Weiner index are 2.097 and 2.053, respectively. In conclusion, we suggest that cyanobacterial inoculation would be a suitable and effective technique to recover biological soil crusts, and may further restore the ecological system. (C) 2008 Published by Elsevier Ltd.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser

We have demonstrated passive mode-locking in a diode-end-pumped Nd:YVO4 laser using two kinds of semiconductor absorbers whose relaxation region comes from In0.25Ga0.75As grown at low temperature (LT) and GaAs/air interface respectively Mode-locking, using absorbers of the GaAs/air interface relaxation region, has the characteristics of less Q-switching tendency and higher average output power than that using absorbers of LT In0.25Ga0.75As relaxation region, but is not as stable as the latter.

MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

Semiconducting manganese silicide, Mn27Si47 and Mn15Si26, were obtained using mass-analyzed low energy dual ion beam epitaxy technique, Auger electron spectroscopy depth profiles showed that some of the Mn ions were deposited on single-crystal silicon substrate and formed a 37.5 nm thick Mn film, and the other Mn ions were successfully implanted into the Si substrate with the implantation depth of 618 nm. Some samples were annealed in the atmosphere of flowing N-2 at 840 degreesC. X-ray diffraction measurements showed that the annealing was beneficial to the formation of Mn27Si47 and Mn15Si26 (C) 2001 Published by Elsevier Science B.V.

Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate

Photoluminescence measurements have been performed on cubic GaN films with carrier concentration as low as 3 x 10(13) cm(-3). From the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 eV were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively Additionally, we observed two additional emission lines at 2.926 and 2.821 eV, and suggested that they belong to donor-acceptor pair transitions. Furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 eV) are from a common shallow donor to three different accepters. The excitonic emission at 3.216 eV has a full-width-at-half-maximum value of 41 meV at room temperature, which indicates a good optical quality of our sample.

Surface states induced photoluminescence from Mn2+ doped CdS nanoparticles

Manganese doped CdS nanoparticles were synthesized in basic aqueous solution by using mercapto acetate as capping reagents. The nanoparticles were characterized by HRTEM, EPR, photoluminescence and optical absorption measurements. Out of our expectation, doping of Mn2+ ions altered the recombination paths in CdS nanoparticles markedly. The surface stares facilitated PL from Mn2+ doped CdS nanoparticles is reported. A complete suppression of the emission from surface states at room temperature when doping with Mn2+ ions has been observed for the first time. (C) 2000 Elsevier Science Ltd. All rights reserved.

Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition

The optical properties of cubic GaN films have been investigated in the temperature range of 10-300 K. Five peaks were observed at 10 K. From the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 eV) to donor-acceptor pair (DAP) transitions. Furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 eV. The intensities of DAP transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. (C) 2000 American Institute of Physics. [S0003-6951(00)00921-9].

RAM(h)模型下SpMV存储访问复杂度的分析

稀疏矩阵向量乘(SpMV)采取压缩行存储格式的算法性能非常差,而寄存器分块算法可以使得数据尽量在靠近处理器的存储层次中访问而提高性能.利用RAM(h)模型进行分析和比较不同算法形式的存储访问复杂度,可以比较两种算法的优劣.通过RAM(h)分析SpMV两种实现形式的存储访问复杂度,同时在奔腾四平台上,测试了7个稀疏矩阵的SpMV性能,并统计了这两种算法中L1,L2,和TLB的缺失率,实验结果与模型分析的数据一致.

基于核方法的敏感信息过滤的研究

在深入分析敏感信息过滤任务的特点和难点的基础上,针对现有一般的信息过滤方法的不足,提出了一种利用敏感词的组合信息来改进过滤效果的思想.进而,研究了在核方法的框架下特征共现行为建模的原则并提出了复合ANOVA核来刻画特征组合行为.通过真实信息过滤环境中的测试评估,显示了此敏感信息过滤方法的有效性.