Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy

Self-assembled InAs nanostructures on (0 0 1) InP substrate have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). It is found that the morphologies and PL properties of InAs nanostructures depend strongly on the growth condition. For the same buffer layer, elongated InAs quantum wires (QWRs) and no isotropic InAs quantum dots (QDs) can be obtained using different growth conditions. At the same time, for InAs quantum dots, PL spectra also show several emission peaks related to different islands size. Theoretical calculation indicated that there are size quantization effects in InAs islands. (C) 2001 Elsevier Science B.V. All rights reserved.

Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

Cubic GaN was grown on GaAs(100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 mu m were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.

Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser

The scattering matrix method is used to analyze the multiple reflection effect between the laser diode facet and the fiber grating facet by considering the fiber grating external cavity laser diode (FGECL) as a four-mirror cavity laser. When neglecting other important parameters such as butt-coupling distance between the diode and the fiber facets, coupling efficiency, external cavity length, it is shown that low reflectivity is not a crucial factor for the laser characteristics such as SMSR. Experimentally high SMSR fiber grating external cavity laser is fabricated with a relatively large residual facet reflectivity (about 1%), which is coincident with our simulation results.

基于信息流的可信操作系统度量架构

将信息流和可信计算技术结合,可以更好地保护操作系统完整性.但现有的可信计算度量机制存在动态性和效率方面的不足,而描述信息流的Biba完整性模型在应用时又存在单调性缺陷.本文将两者结合起来,基于Biba模型,以可信计算平台模块TPM为硬件信任根,引入信息流完整性,并提出了可信操作系统度量架构:BIFI.实验表明,BIFI不仅能很好地保护信息流完整性,而且对现有系统的改动很少,保证了效率.

掺Er3+玻璃上转换发光特性研究

采用高温熔制工艺制备了掺Er3+硅酸盐玻璃，应用Judd-Ofelt 理论计算了Er3+光谱参数， 发现玻璃中含有0.15 mol%Er2O3 时各参数取得最大值；分析了玻璃的吸收光谱随Er3+离子浓度的变 化关系；上转换光谱分析表明在522 nm、544 nm、658 nm 处有较强的绿光和红光，分别对应于 2H11/2→4I15/2、4 S3/2→4I15/2、4 F9/2→4I15/2 的跃迁，且522 nm 绿光强度和658nm 红光强度要远大于544 nm 绿光强度. 分析了上转换发光强度随泵浦功率和Er3+离子浓度的变化关系，揭示了上转换发光机制 主要是激发态吸收和能量转换，且均为双光子吸收过程.

低压条件下滴灌灌水均匀度试验研究

低压滴灌毛管进口工作压力、铺设长度、地面坡度及毛管管径是影响滴灌灌水均匀度的重要参数。试验研究结果表明,低压条件下毛管进口压力的变化对灌水均匀度的影响并不明显;灌水均匀度随着毛管铺设长度的增大呈降低趋势,管径越小,降低越显著,但在一定管长范围内,毛管铺设长度对灌水均匀度的影响并不明显;逆坡情况下,灌水均匀度随着坡度的增大而减小,顺坡情况下,灌水均匀度随着坡度的增大呈先增大而后减小的趋势,在2‰的坡度时达到峰值;灌水均匀度随着管径的增大而增大,当管径增大到一定程度后,灌水均匀度随管径增大的幅度减缓。

固斑蝰蛇毒C-型凝集素样蛋白Dabocetin及L-氨基酸氧化酶DRS-LAO的研究

本论文研究了从圆斑蛙蛇泰国亚种（Daboia russellii siamensis）蛇毒中纯化的C一型凝集素样蛋白Dabocetin和L一氨基酸氧化酶DRS一AO的理化性质、生物学活性和分子克隆。Dabocetin是分子量约为28扔。的异二聚体蛋白，它由分子量约为15.0kDa和14．5kDa的两个同源亚基以和p共价结合形成。N－末端氨基酸序列比较显示，Dabocetin与目前已知的蛇毒c一型凝集素样蛋白有很高的同源性。即使在终浓度达50．0。叫而时，Dabocetin也不能直接诱导血小板聚集。此外，在终浓度为40.00μg/ml时，Dabocetin几乎不能抑制由AdP，TMVA和stejnulxin诱导的血小板聚集。但是，Dabocetin呈剂量依赖地抑制瑞斯托霉素诱导的血小板凝集，其半数抑制率ICS。值为10.80ug/ml。流式细胞仪分析表明，Dabocetin显著抑制单克隆抗体522与GPIba的结合，提示Dabocetin很可能是一个GPIb结合蛋白。从圆斑蛙蛇的毒腺中克隆到了7个编码不同蛇毒C一型凝集素样蛋白亚基的七DNA（命名为DRs一1至DRs一7）。其中，DRsLS编码Dabocetin的a亚基，DRS一6编码Dabocetin的p亚基。DRs一1和DRS一2很可能是圆斑蛙蛇毒腺中表达的X因子激活剂的两条轻链LCZ和LCI的山NA。DRS一3，DRS毛4和DRSL7可能是圆斑蛙蛇毒腺中表达的C一型凝集素样蛋白p亚基的。NA。DRsLAO是一个新的L一氨基酸氧化酶，比活力为1．98U加噶。十二烷基磺酸钠一聚丙烯酞氨凝胶电泳（SDs-PAGE）分析显示，该酶在还原和非还原条件下均呈现一条蛋白带，表观分子量约为58kDa。N-末端氨基酸序列比较显示，DRS一AO与目前已知的蛇毒L一氨基酸氧化酶有很高的同源性。该酶的最适底物为L一亮氨酸，最适pH为8．8。DRs一Ao呈剂量依赖地抑制扔P和仆IvA诱导的血小板聚集，其半数抑制率ICS。值分别为32.8μg/ml和32.3μg/ml。DRS-LAO对金黄色葡萄球菌（灯Cc25923）和耐甲氧西林金黄色葡萄球菌有较强的抗菌作用。DRs一AO对金黄色葡萄球菌必Tcc25923）的最低抑菌浓度卿C）和最低杀菌浓度耐甲氧西林金黄色葡萄球菌的孤CS。和呱Cg。值分别为18．。林留时和36.0μg/ml；DRSLAo对耐甲氧西林金黄色葡萄球菌的MBC50和MBCg。值分别为36.0μg/ml和72.0μg/ml。通过对DRS一AO的分子克隆，得到了编码DRS-AO的部分cDNA序列。

PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF INP ON GAAS SUBSTRATE GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

A high-energy shift of the band-band recombination has been observed in photoluminescence spectra of the strained InP layer grown on GaAs substrate. The InP layer is under biaxial compressive strain at temperatures below the growth temperature, because the thermal expansion coefficient of InP is smaller than that of GaAs. The strain value determined by the energy shift of the band-edge peak is in good agreement with the calculated thermal strain. A band to carbon acceptor recombination is also identified.