110 resultados para 515 Psykologia
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分析了斜生栅藻(Scenedesmus obliquus)在光温(30℃,180μmol/m2·s)胁迫条件下积累虾青素的过程,观察了该过程中细胞形态及细胞光合生理的变化。胁迫条件下,细胞在48h内生成并积累了包括海胆酮、角黄素、金盏花黄素和金盏花红素在内的多种次生类胡萝卜素,并合成了虾青素及其酯。该过程中,细胞形态由两端尖细变得不规则、膨大,原来由4、8个细胞组成的定形群体变为游离的单个细胞或2个细胞组成的群体。藻细胞光合速率在24h内先下降后上升,而后又呈现下降趋势,从34.29μmolO2/mg C
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以致病性嗜水气单胞菌(Aeromonas hydrophila)人工感染的中华鳖(Trionyx sinensis)肝、脾、肾组织为材料,应用抑制性差减杂交(SSH)技术,构建了嗜水气单胞菌感染组织的差减cDNA文库。以中华鳖管家基因-βactin作为差减指标检测该文库差减效率达210倍,表明感染细菌后某些差异表达基因得到了相应倍数的富集。将获得的cDNA片段连接到pMD18-T载体并转化大肠杆菌DH5α感受态细胞。PCR阳性检测显示差减片段在150—800bp之间。该差减cDNA文库的构建为快速分离和鉴
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中国科学院重大项目A(KE951-A1-202)
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The relationship between chlorophyll a and fractionation of sediment phosphorus, inorganic phosphate-solubilizing bacteria (IPB), and organic phosphate-mineralizing bacteria (OPB) was evaluated in a large Chinese shallow eutrophic lake (Lake Taihu) and its embayment (Wuli Bay). At the three study sites, the increase of chlorophyll a concentrations in April paralleled those of the iron bound phosphate accounting for major portion of sediment inorganic phosphate, and in June significantly higher OPB and IPB numbers (especially OPB) in sediment were main contributors to the peaks of chlorophyll a concentration. Even though IPB peaked from February to June, it should serve as an unimportant P source due to the irrelevancy with chlorophyll a and soluble reactive phosphorus (SRP). By contrast, at the other site in the embayment, the calcium-bound phosphate was predominant and solid, which was difficult to be released, and neither IPB nor OPB were detectable in the sediment, indicating weak potential for phosphorus release from the sediment, which was reflected in the small seasonal variation in SRP concentration in water column. Hence, the extents to which the three general mechanisms behind phosphate release from sediment (desorption of iron bound phosphate, solubilization by IPB and enzymatic hydrolysis by OPB) operated were different depending on seasons and sites in Lake Taihu, they may jointly drive phosphate release and accelerate the eutrophication processes.
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In previous studies of nuclear transplantation, most cloned animals were obtained by intraspecies nuclear transfer and are phenotypically identical to their nuclear donors; furthermore, there was no further report on successful fish cloning since the report of cloned zebrafish. Here we report the production of seven cross-genus cloned fish by transferring nuclei from transgenic common carp into enucleated eggs of goldfish. Nuclear genomes of the cloned fish were exclusively derived from the nuclear donor species, common carp, whereas the mitochondrial DNA from the donor carp gradually disappeared during the development of nuclear transfer (NT) embryos. The somite development process and somite number of nuclear transplants were consistent with the recipient species, goldfish, rather than the nuclear donor species, common carp. This resulted in a long-lasting effect on the vertebral numbers of the cloned fish, which belonged to the range of goldfish. These demonstrate that fish egg cytoplasm not only can support the development driven by transplanted nuclei from a distantly related species at the genus scale but also can modulate development of the nuclear transplants.
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In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed. (c) 2007 Elsevier B.V. All rights reserved.
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Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. (c) 2006 Elsevier B.V. All rights reserved.
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High-quality AlInGaN quaternary layers were grown on c-Al2O3 using a thick GaN template. A full width at half maximum of 0.075 degrees from AlInGaN(0004) rocking curve and a minimum yield of 5.6% from Rutherford backscattering/channelling spectrometry (RBS) prove the AlInGaN layer of a comparable crystalline quality with GaN layers. The chemical compositions (both of Al and In contents) of AlInGaN layers are directly obtained from RBS and elastic recoil detection analysis. The lattice parameters both in perpendicular and parallel directions are deduced from X-ray diffraction. The AlInGaN layer is found to process a compressive strain in parallel direction and a tensile strain in perpendicular direction. (c) 2006 Elsevier B.V. All rights reserved.
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Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.
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A new finite difference wide-angle beam propagation method is developed by introducing the least-squares expansion approximant in the propagator expansion. In this new method it is not necessary to select the reference index point because of the whole region approaching the lease-square expansion. This method avoids the problems induced by error selection of the reference index in the old methods based on Taylor or Pade expansion. Several typical structures are simulated by the new method and the results prove the validity of it.
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Single-electron devices (SEDs) have ultra-low power dissipation and high integration density, which make them promising candidates as basic circuit elements of the next generation VLSI circuits. In this paper, we propose two novel circuit single-electron architectures: the single-electron simulated annealing algorithm (SAA) circuit and the single-electron cellular neural network (CNN). We used the MOSFET-based single-electron turnstile [1] as the basic circuit element. The SAA circuit consists of the voltage-controlled single-electron random number generator [2] and the single-electron multiple-valued memories (SEMVs) [3]. The random-number generation and variable variations in SAA are easily achieved by transferring electrons using the single-electron turnstile. The CNN circuit used the floating-gate single-electron turnstile as the neural synapses, and the number of electrons is used to represent the cells states. These novel circuits are promising in future nanoscale integrated circuits.
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Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.
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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-04T06:57:43Z No. of bitstreams: 1 71.pdf: 92858 bytes, checksum: 2a0a4972af8e56b0fced818042dd6dbd (MD5)
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敏捷供应链是企业适应市场环境的变化而演化出的动作模式,是属于开放的复杂巨系统范畴。而处理开放的复杂巨系统的有效方法是综合集成研讨厅体系。论文首先介绍了复杂性、复杂系统;分析了敏捷供应链的复杂性,指出敏捷供应链是一个开放的复杂巨系统;提出用综合集成研讨厅体系的思想研究敏捷供应链管理问题,给出了一个敏捷供应链管理的研讨框架,为敏捷供应链管理问题的研究提供了一个新的思路;提出将ARIS(集成信息系统体系结构)引入到综合集成研讨厅中,对供应链进行建模仿真,以支持核心企业实施敏捷供应链管理。