盐胁迫下杜氏盐藻(Dunaliella salina)cDNA文库的构建与新表达序列标签(EST)的获取、分析

在成功养殖杜氏盐藻(Dunaliella salina)的基础上,采用Takara cDNA文库构建试剂盒,构建盐胁迫下(1.5 mol/L NaCl)杜氏盐藻的cDNA文库.经鉴定,原始文库的滴度达1.2×106cfu/mL,重组率高达95%,且多数插入片段均在500 bp以上.对表达序列标签(expressed sequence tag,EST)分析发现,杜氏盐藻基因组中包含大量未鉴定的新基因.随机挑取60个单克隆进行序列测定,将所测序列经Blast比对等生物信息学方法分析后,发现其中三分之一,即20

武汉东湖底栖藻类对磷的滞留作用

测定了底栖藻类在武汉东湖沿岸带人工基质上建群时的生物量和藻垫中不同组分的磷含量,结果显示,建群期间底栖藻类的生物量(叶绿素a和无灰干质)与总磷(total phosphorus,TP)含量显著相关.建群早期藻垫中总磷的含量随底栖藻类生物量的缓慢增加而增加,随着以绿藻占优势的底栖藻类群落的发展,生物量呈指数级增加,藻垫的总磷含量也快速增加,两者同时在第28d达到最高峰值(Chl a=54.5μg.cm-2;TP=96.7μg.cm-2).单位生物量的藻垫对磷的滞留作用(TP/Chl a)随着底栖藻类生物量的

中国东部武夷山风景区苔藓中的缓步动物

记述了采自中国东部福建省武夷山风景区苔藓中的缓步动物11种,包括:日本棘影熊虫Echiniscus japonicus Morikawa,1951中国东部新纪录种;结痂棘影熊虫Echiniscus scabrospinesus Fontoura,1982中国东部新纪录种;华美假棘影熊虫Pseudechiniscus facettalis Petersen,1951中国东部新纪录种;迟缓小斑熊虫Milnesium tardigradum(Doyère,1840);埃卡门大生熊虫Macrobiotus ari

猪囊尾蚴铜/锌超氧化物歧化酶(Cu/ZnSOD)基因的克隆和表达

目的克隆猪囊尾蚴胞质含铜/锌的超氧化物歧化酶基因(Cu/ZnSOD),并比较其与其它寄生蠕虫相应基因结构的相似性。方法通过获取其它生物Cu/ZnSOD基因的保守区域,设计保守引物,用于扩增该寄生虫的Cu/ZnSOD基因。结果Cu/ZnSOD基因编码一15.6kDa的蛋白,该蛋白的推导序列中含有这类酶的活性和二级结构所需要的所有保守的氨基酸残基,并且与其它寄生虫的相应序列有高达70.6%的相似度。抑制剂研究试验表明所克隆的SOD属于Cu/ZnSOD,该蛋白在大肠杆菌中得以成功表达,表达产物具有SOD活性。免

转反义sGnRH基因败育鲤鱼的性成熟诱导

采用反义转基因技术已成功获得整合CAsGnRHpc-antisense基因的转基因鲤鱼,简称AS-sGnRH F0鲤鱼。通过挤压1年龄AS-sGnRH F0鲤鱼的腹部,发现该群体中有精液/无精液个体比例为33/69,与对照组鲤鱼中有精液/无精液个体比例接近1:1相比存在显著差异。通过注射鲤鱼垂体抽提物诱导无精液AS-sGnRH F0鲤鱼恢复繁殖功能,获得3尾育性被恢复的AS-sGnRH F0鲤鱼。进一步的解剖观察发现,在无精液AS-sGnRH F0鲤鱼群体中,完全无性腺的AS-sGnRH F0鲤鱼比例约3

Molecular cloning and expression characterization of ApoC-I in the orange-spotted grouper

Endogenous yolk nutrients are crucial for embryo and larval development in fish, but developmental behavior of the genes that control yolk utilization remains unknown. Apolipoproteins have been shown to play important roles in lipid transport and uptake through the circulation system. In this study, EcApoC-I, the first cloned ApoC-I in teleosts, has been screened from pituitary cDNA library of female orange-spotted grouper (Epinephelus coioides), and the deduced amino acid sequence shows 43.5% identity to one zebrafish (Danio rerio) hypothetical protein similar to ApoC-I, and 21.2%, 21.7%, 22.5%, 20%, and 22.5% identities to Apo C-I of human (Homo sapiens), house mouse (Mus musculus), common tree shrew (Tupaia glis), dog (Canis lupus familiaris) and hamadryas baboon (Papio hamadryas), respectively. Although the sequence identity is low, amphipathic alpha-helices with the potential to bind to lipid were predicted to exist in the EcApoC-I. RT-PCR analysis revealed that it was first transcribed in gastrula embryos and maintained a relatively stable expression level during the following embryogenesis. During embryonic and early larval development, a very high level of EcApoC-I expression was in the yolk syncytial layer, indicating that it plays a significant role in yolk degradation and transfers nutrition to the embryo and early larva. By the day 7 after hatching, EcApoC-I transcripts were observed in brain. In adult, EcApoC-I mRNA was detected abundantly in brain and gonad. In transitional gonads, the EcApoC-I expression is restricted to the germ cells. The data suggested that EcApoC-I might play an important role in brain and gonad morphogenesis and growth.

An ELISA-like time-resolved fluorescence immunoassay for microcystin detection

Background: A time-resolved fluorescence immunoassay (TRFIA), based on anti-microcystin-LR (MCLR) monoclonal antibodies (MAbs) and europium-labeled antimouse IgG conjugate, was first developed for microcystin detection. Methods: Anti-MCLR MAbs were prepared by a standard method, and the attained MAbs showed a good cross reactivity with MCLR, MCRR and MCYR. The TRFIA was performed in an indirect competitive mode. The detection method of TRFIA was compared with indirect competitive enzyme-linked immunosorbent assay (ELISA) and high-performance liquid chromatography (HPLC). Results: The TRFIA exhibited a typical sigmoidal response for MCLR at concentrations of 0.005-50 ng/ml, with a wide quantitative range between 0.01 and 10 ng/ml, indicating the broadest detective range and the most sensitive of all the methods for microcystins (MCs) detection. Additionally, the TRFIA maintained good reliability through its quantitative range, as evidenced by low coefficients of variation (1.6-12.2%). The toxin data of algal samples assayed from TRFIA were in the same range as those with ELISA and HPLC, implying that the method was reliable and practical for the detection of MCs. Conclusions: The TRFIA may offer a valuable alternative or a substitute for conventional ELISA for microcystin detection. (C) 2004 Elsevier B.V. All rights reserved.

Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from a mixture of SiH4 diluted in H, The effect of hydrogen dilution ratios R-H = [H-2]/[SiH4] on microstructure of the films was investigated. Photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that more the crystalline volume fraction in the silicon films, the higher mobility life-time product (mu tau), better the stability and lower the photosensitivity. Those diphasic films contained 8%-31% crystalline volume fraction can gain both the fine photoelectronic properties and high stability. in the diphasic (contained 12% crystalline volume fraction) solar cell, we obtained a much lower light-induced degradation of similar to 2.9%, with a high initial efficiency of 10.01% and a stabilized efficiency of 9.72% (AM1.5, 100 mW/cm(2)). (c) 2005 Elsevier B.V. All rights reserved.

Characterization of silicon carbide thin films and their use in colour sensor

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by plasma-enhanced chemical vapour deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source. The previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-Si1-xCx:H film, widen the valence controllability. The data show that films with optical gaps ranging from about 1.9 to 3.6 eV could be produced. In this work the influence of the hydrogen dilution ratio of the reactive gases on the a-Si1-xCx:H film properties was investigated. The microstuctural and photoelectronic properties of the silicon carbide films were characterized by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), and FT-IR spectrometry. The results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-Si1-xCx:H films. One pin structure was prepared by using the a-Si1-xCx:H film as the intrinsic layer. The light spectral response shows that this structure fits the requirement for the top junction of colour sensor. (c) 2004 Elsevier B.V. All rights reserved.

Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon-on-insulator nMOSFET have been studied. The experimental results show that the channel electron mobilities of the devices fabricated on the SIMON (separation by implanted oxygen and nitrogen) wafers are lower than those of the devices made on the SIMOX (separation by implanted oxygen) wafers. The devices corresponding to the lowest implantation dose have the lowest mobility within the range of the implantation dose given in this paper. The value of the channel electron mobility rises slightly and tends to a limit when the implantation dose becomes greater. This is explained in terms of the rough Si/SiO2 interface due to the process of implantation of nitrogen. The increasing negative shifts of the threshold voltages for the devices fabricated on the SIMON wafers are also observed with the increase of implanting dose of nitrogen. However, for the devices fabricated on the SIMON wafers with the lowest dose of implanted nitrogen in this paper, their threshold voltages are slightly larger on the average than those prepared on the SIMOX wafers. The shifts are considered to be due to the increment of the fixed oxide charge in SiO2 layer and the change of the density of the interface-trapped charge with the value and distribution included. In particular, the devices fabricated on the SIMON wafers show a weakened kink effect, compared to the ones made on the SIMOX wafers.

Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique

Using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 eV above the bandgap of GaAs (E-0). By analyzing its optical characteristics, we assigned this peak to the nonequilibrium luminescence emission from the E-0 + Delta(0) bandgap in semi-insulated GaAs, which was further verified by Raman results. The observed polarization, excitation power dependence and temperature dependence of the photoluminescence spectra from the E-0 + Delta(0) energy level were very similar to those from the E-0 of GaAs. This mainly resulted from the common conduction band around Gamma(6) that was involved in the two optical transition processes, and indicated that the optical properties of bulk GaAs were mainly determined by the intrinsic properties of the conduction band. Our results demonstrated that the micro-photoluminescence technique is a powerful tool to investigate the high energy states above the fundamental bandgap in semiconductor materials.

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

The influence of reactor pressure on GaN nucleation layer (NL) and the quality of subsequent GaN on sapphire is studied. The layers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire substrates and investigated by in situ laser reflectometry, atomic force microscope, scanning electron microscope, X-ray diffraction and photoluminescence. With the increase of reactor pressure prior to high-temperature GaN growth, the size of GaN nuclei formed after annealing decreases, the spacing between nucleation sites increases and the coalescence of GaN nuclei is deferred. The optical and crystalline qualities of GaN epilayer were improved when NLs were deposited at high pressure. The elongated lateral overgrowth of GaN islands is responsible for the quality improvement. (C) 2003 Elsevier Science B.V. All rights reserved.

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

An extended technique derived from triple-axis diffraction setup was proposed to measure lattice parameters of cubic GaN(c-GaN) films. The fully relaxed lattice parameters of c-GaN are determined to be 4.5036+0.0004 Angstrom, which is closer to the values of a hypothetical perfect crystal. The speculated zero setting correction (Deltatheta) is very slight and within the range of the accuracy of measurement. Additionally, we applied this method to analyze strain of four different kinds of c-GaN samples. It is found that in-plane strain caused by large lattice mismatch and thermal expansion coefficients mismatch directly influence the epilayer growth at high temperatures, indicating that the relaxation of tensile strain after thermal annealing helps to improve the crystalline quality of c-GaN films and optical properties. (C) 2003 Elsevier Science B.V. All rights reserved.

一种基于Agent的自适应软件过程模型

传统的软件过程模型大多是静态的、机械的、被动的,它们要求软件工程人员在描述软件过程时预期所有可能发生的情况,并且显式地定义这些问题的解决方案.当软件过程所处的环境发生变化时,软件过程无法自适应地对这些变更作出相应的调整.提出了一种基于Agent的自适应软件过程模型.在这种软件过程模型中,软件过程被描述为一组相互独立而对等的实体——软件过程Agent.这些软件过程Agent能够对软件过程环境的变化主动地、自治地作出反应,动态地确定和变更其行为以实现软件开发的目标.