First description of a novel Weissella species as an opportunistic pathogen for rainbow trout Oncorhynchus mykiss (Walbaum) in China

Six strains of Gram-positive, catalase-negative, non-motile, irregular short rod-shaped Weissella bacteria, with width and length of 0.5-0.6 and 1.2-2.7 mu m were isolated from diseased rainbow trout Oncorhynchus mykiss (Walbaum) in winter of 2007 at a commercial fishery in Jingmen, Hubei province, China. The diseased rainbow trout exhibited hemorrhage in eyes, anal region, intestine and abdomen wall, petechia of liver, some fish with hydrocele in stomach. Six isolates had identical biochemical reactions, phylogenetic analysis of 16S rDNA sequences, amplified ribosomal DNA restriction analysis (ARDRA), enzymatic profile analysis and antimicrobial susceptibility results, indicating as a single clonal outbreak. But all were different from any other validated twelve Weissella species in the term of physiological and biochemical characters. It is indicated that isolates are phylogenetically closer to Weissella halotolerans, Weissella viridescens and Weissella minor on 16S rDNA phylogenetic analysis result, than to W halotolerans and W viridescens on the result of ARDRA study and enzymatic profile analysis. Antimicrobial susceptibility testing was used to scan effective drugs for the therapy of this disease. Experimental infection assays with one isolate were conducted and pathogenicity (by intraperitoneal injection) was demonstrated in rainbow trout O. mykiss (Walbaum) and crucian carp (Carassius auratus gibelio) fingerlings. Because no Weissella was detected in fish feedstuffs and pond water, the source of this pathogen remains unknown, and Weissella isolates were regarded as an opportunistic pathogen for rainbow trout. This is the first report of Weissella strains which can cause disease of cultured fish in the world. (C) 2009 Elsevier B.V. All rights reserved.

12路并行10Gb/s甚短距离传输系统

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Enhancement of stimulated emission in 12-fold symmetric quasi-crystals

In this paper, we investigate the stimulated emission in a 12-fold symmetric quasiperiodic photonic crystal. The stimulated emission peaks in the quasiperiodic photonic crystal are more abundant and stronger than those in a periodic crystal. Also, more stimulated emission peaks appear as the crystal size and the gain increase, and some frequencies of the peaks are independent of the incident direction. These phenomena may be due to wave localization in the quasiperiodic photonic crystal.

Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors

High-quality InAsxSb1-x (0 < x <= 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2x10(4) cm(2) V-1 s(-1) and cutoff wavelengths longer than 10 mu m at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 mu m are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 mu m with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1-x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors. (c) 2006 American Institute of Physics.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Normal-incident infrared absorption in the 8-12-mu m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 mu m is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. (C) 1998 American Institute of Physics. [S0003-6951(98)01151-6].

Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity

High-quality InGaAs/InAlAs/InP high-electron-mobility transistor (HEMT) structures with lattice-matched or pseudomorphic channels have been grown by molecular-beam epitaxy (MBE). The purpose of this work is to enhance the channel conductivity by changing the epitaxial structure and growth process. With the use of pseudomorphic step quantum-well channel, the highest channel conductivity is achieved at x = 0.7, the corresponding electron mobilities are as high as 12300 (300 K) and 61000 cm(2)/V.s (77 K) with two-dimensional electron gas (2DEG) density of 3.3 x 10(12) cm(-2). These structures are comprehensively characterized by Hall measurements, photoluminescence, double crystal X-ray diffraction and transmission electron microscopy. Strong room-temperature luminescence is observed, demonstrating the high optical quality of the samples. We also show that decreasing the In composition in the InyAl1-yAs spacer is very effective to increase the 2DEG density of PHEMT structures. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

A 12-bit 300 MHz CMOS DAC for high-speed system applications

This paper describes a 12-bit 300 MHz CMOS DAC for high-speed system applications. The proposed DAC consists of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs. In order to ensure the linearity of DAC, a double Centro symmetric current matrix is designed by using the Q(2) random walk strategy. To minimize the feedthrough and improve the dynamic performance, the drain of the switching transistors is isolated from the output lines by adding two cascoded transistors.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

12 W high efficiency single frequency ring laser

Single-frequency output power of 12 W at 1064 nm is demonstrated. Pumped by a fiber-coupled diode laser, the Nd:YVO4 produces 58.6% of the slope efficiency with respect to absorbed pump power, and 52.7% of the optical-optical efficiency and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.11. To the best of our knowledge, this is the highest slope efficiency and optical-optical efficiency in single-frequency Nd:YVO4 ring laser. The slope efficiency of the single frequency laser is close to the limit of the efficiency. [GRAPHICS] output spectrum of the single-frequency Nd:YVO4 ring laser

假单胞菌P_(12)对菲的降解

从武汉石油化工厂的活性污泥中，分离到一株可以以菲为唯一碳源和能源的假单胞菌P_(12)该菌经靛蓝产生法测定有双加氧酶，在菲无机盐培养基中生长时，有3-菲酚物质积累，经检测有一条质粒带。用丝裂霉素C消除质粒后的菌落，失去了降解菲的能力，说明P_(12)对菲的降解功能是由质粒控制的。

Pulse-front matched ultra-broadband optical parametric chirped pulse amplifier for sub-12 fs pulse generation

We propose a LBO-based ultra-broadband chirped pulse optical parametric amplifier employing pulse-front-matching to yield transform-limited sub-12-fs pulses. Measurement of the maximum possible gain bandwidth for the LBO-based OPCPA demonstrates more than 60nm gain bandwidth FWHM. For the generation of TL pulses by the use of this OPCPA, a suitable combination of OPCPA and PFM is first presented. The PFM pump geometry realizes tilt-free signal amplification, and permits this OPCPA to generate TL sub-12-fs pulses.

有机/无机纳米杂化发光材料的制备与性质

近年来，纳米杂化技术，尤其是溶胶-凝胶技术为发光材料的发展开辟了一个崭新的途径，但目前这些工作尚处于研究的初始阶段，还有许多问题有待克服，例如：有机染料的热稳定性差，稀土有机配合物在溶胶体系中的溶解性、分散性差，以及发光基质在杂化体系中具有浓度淬灭效应、渗出效应等。为此，我们从分子设计角度去有目的的合成一类新型Sol-gel前体，以此制备出系列有机／无机杂化发光材料，取得了一批有意义的结果。1．经γ-射线辐照原位制备有机／无机纳米杂化材料基于Sol-gel方法及γ-射线辐照技术发明了一种制备有机／无机杂化材料的新方法，并制备了两类有机／无机杂化材料，一类是有机／无机两相间无强相互作用（共价键）的杂化材料，一类是两相间有弱相互作用（氢键）的杂化材料。从材料制备上看，反应条件温和，易控制，解决了长期困扰的样品开裂问题，制备工艺简单，易操作，易于工业化。从材料的结构表征上看，经γ-射线辐照聚合的样品的聚合比较完全，紫外-可见光谱及透射电子显微镜观察结果表明杂化样品中有机相、无 机相分散性良好，杂化是在分了水平上进行的。无机网络的限制不仅提高了杂化样品中聚合物的热稳定性和相转蛮温度，还提高了杂化样品中聚合物的机械力学性能。所发明γ-射线辐照原位制备有机／无机纳米杂化材料技术可以作为相关材料制备的通用方法。2．含有机染料有机／无机纳米杂化发光材料 设计并合成了一种官能化有机染料（可作Sol-gel前体），采用所发明的γ-射线辐照技术制备了两类有机／无机杂化发光材料，一类是相间有强相互作用(共价键)有机／无机的杂化发光材料（HEMA/KH570），一类是两相间只有弱相互作用（氢键）有机／无机杂化发光材料（HEMMTEOS）。所得杂化发光样品透明性良好，在可见光范围内透光率在90％以上，在紫外光下能发射出较强的蓝色（偏紫）荧光。在所研究体系中，随着有机染料浓度的增加，样品的发光强度在逐渐增大，有机／无机组分、组成的变化对杂化材料的荧光行为：荧光发射、荧光激发、荧光寿命影响不大；同有机溶液相比，杂化基体的限制使得有机染料的荧光发射波长发生红移，纯无机基体使之红移位置更大。杂化材料的最强荧光发射波长较染料本体杂化材料的短，表明了有机染料是均匀分散在杂化基体中的。3．含稀土有机／无机纳米杂化发光材料通过所合成的含酰亚胺键的有机芳香羧酸化合物(NP)的稀土配合物的紫外-可见、荧光、磷光光谱探讨了稀土配合物中有机配体与稀土衷心离子的能量传递与能级匹配的关系。钆配合物的低温磷光光谱结果表明，所合成的酰亚胺类芳香羧酸化合物(NP)的最低三重态能级为24690cm~(-1)，与稀土铕和铽的能级差分别为7426cm~(-1)和4190cm~(-1)。荧光光谱表明所合成芳香羧酸配体与稀土离子铽的能级匹配性好，与铕离子则较差，即铽的二元配合物的相对荧光效率比铕的高，荧光寿命则几乎相同在2ms左右。在芳香羧酸化合物（NP)的三元稀土配合物中，第二配体1,10-邻菲罗啉(Phen)是能量吸收，传递的主体。同相应二元配合物相比，铕的三元配合物的相对荧光效率提高了三倍，而铽的则降低了一半，三元配合物的荧光寿命为4ms，比二元的长近一倍。所研究稀土配合物的表现的均是基于中心稀土离子的特征跃迁的特征发光，即：Eu~(3+)的5D_0→7F_j (j = 0, 1, 2, 3, 4)跃迁，Tb~(3+)的~5D_4 → ~7F_j (j = 6, 5, 4, 3)跃迁。基于小分子模型配合物的研究，设计并合成了一种新型有机芳香羧酸Sol-gel前体(TAT)，从而原位合成了含稀土有机／无机纳米杂化发光材料。荧光光谱表明所制得的有机／无机杂化膜的发光谱带较窄，色纯度较高。在含稀土有机／无机杂化膜中，随着稀土离子浓度的增加，样品相对荧光强度增大，浓度淬灭效应及发光基质的渗出效应在所研究体系中未出现。同小分子稀土配合物相比，含稀土杂化膜的荧光发射谱带窄化、不劈裂、对称性好，而且荧光寿命普遍变小，发光中心趋于单一．透射电镜结果表明所制备含稀土有机／无机杂化膜，不仅有机／无机基体杂化在分子水平上，稀土离子在杂化基体中的聚集结构也在纳米层次上，一般在50～100nm，随着稀土离子浓度的增加，这种聚集结构尺寸略有增大，但小于100nm。通过三基色原理成功地制备了发白色荧光有机／无机杂化材料，该杂化材料在紫外光的激发下可同时发出红、绿、蓝三种荧光，色坐标测试结果为：X = 0.314，Y = 0.316，该位置已接近等能量白光色坐标的理论值X = 0.33，Y = 0.33，又接近实际显示的需要，有一定的理论及实践意义。

Cyanex302及CA-12萃取稀土动力学的研究

随着萃取技术的不断发展，人们日益要求更加深入的了解萃取过程的机制及其动力学特性。以便有效地控制和强化萃取过程，提高萃取效率，或者利用萃取动力学的差异来实现某些分离嘴过程。尽管许多萃取过程进行得很快，但是人们也发现不少的金属鳌合物萃取体系，其萃取过程相当缓慢。因而这类体系的萃取机制和萃取动力学问题已日益引人注目。除此而外，在设计，放大或改进萃取设备时，研究和掌握有关萃取过程的动力学规律也有十分重要意义。在本文中主要对稀土萃取动力学进行了研究，得到主要结果如下：1．研究了硫代有机磷酸Cyan.ex302萃取饵的动力学。通过测定各种萃取条件对萃取速率的影响，获得了萃取速率方程，并讨论了萃取的控制过程。实验发现萃取剂中的杂质对萃取具有较大的加速作用，这对工业生产具有一定的实际意义。2.用两相滴定法测定了两种新合成的J梭酸萃取剂CA-12和CA-100的某些重要的物理常数。这将有助于深入研究它们的萃取性质及机理。3．用层流恒界面池研究了CA-12萃取La, Gd,Er, Yb和Y的动力学。考察了各种因素对萃取速率的影响，获得了它们的萃取速率方程，实验发现了它们的萃取控速步骤并推测了其萃取机理。4．研究了HEHEHP对CA-12萃取Yb和Y的动力学的影响。实验发现在CA一12中加入少量的HEHEHP后，萃取活化能显著降低，萃取速率明显加快。由于加入HEHEHP后，萃取Yb的活化能的降低要比萃取Y的活化能降低的程度大'，所以使Yb和Y的萃取分离因素加大。5．用两相滴定法研究了HEHEHP萃取铭的机理，CA-12萃取稀土及其相关离子的机理。并计算了它们相应的平衡常数。