A 2x2 optical switch based on plasma dispersion effect in silicon-on-insulator

Based on Mach-Zehnder interferometer (MZI) structure, a 2 x 2 optical switch is fabricated on SOI wafer. Modulation of the refractive index of MZI arms is achieved through free carriers plasma dispersion effect of silicon. The device presents an insertion loss as low as 3.44 dB and a response time as small as 300 ns. The crosstalk and extinction ratio are -15.54 and 14.9 dB, respectively. Detailed analysis and explanation of the operating behaviors are also presented. (C) 2005 Elsevier B.V. All rights reserved.

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

生物质中热值气化技术的分析及探讨

本文从生物质气化的特点出发，介绍了水蒸汽气化、氧气气化及双床气化三种生产中热值煤气技术的原理及方法，讨论了它们各自的气化结果及优缺点。并以氧气气化为例，估算了现有条件下制取中热值生物质气的投资及其生产成本，分析生物质气与常规煤气相比有较强的市场竞争力。

黄土高原坡地枣树地膜微集水造林效果研究

在黄土高原丘陵沟壑区,采用田间试验研究了地膜微集水造林技术对提高枣树成活率、土壤温度以及枣树根区土壤水分含量的影响。结果表明:地膜微集水方法提高枣树移栽期0~100cm土层土壤水分,提高0~20 cm土层地温,造林成活率较对照提高15%;在枣树生长期和发芽期,土壤0~100 cm剖面含水量比对照高30.3%;在集中降雨后48 h内,土壤水分下渗深度比对照深34 cm,达到67 cm。该方法成本低、操作简单、效率高,可以在黄土高原枣树栽植中推广应用。

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons. the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.

Si-based resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

日本、华北落叶松幼——成龄相关选择模型及早期选择

为了加速日本、华北落叶松的遗传改良进程，缩短育种周期，本文建立了用于早期选择的年遗传增益最大模型 (MAGG) 和最大未来净值模型 (MFNW)。遗传力平方根比率(g)、幼-成龄遗传相关系统(r) 和遗传预测系数等参数可用8种随时间函数来逼近，根据残差平方和与非线性回归相关指数，以二次抛物线式拟合的精度最高。不同模型利用的评价标准及参数逼近的函数不同，估算的最佳选择年龄 (tmax) 也不同。对于 MFNW模型，tmax的确定受生物学因子和经济学因子的共同影响。估算的结果表明，日本、华北落叶松的早期选择都是有效的。如果轮伐期（T）为20年，考虑改良的性状为材积，对于日本落叶松可用早期的树高作为选择指标，初选在2龄进行，第二次选择在7－8龄，早期选择的相对效率 (RSE) 分别为 14.2037 和 2.5017－1.9378；对于华北落叶松，当用树高作为早期选择指标时，第一次选择在3龄 (RSE=3.1711)，第二次选择在 9－10 (RSE=1.5492－1.4561)，当用树高年生长最作为早期选择指标时，第一次选择在4龄 (RSE=1.1276)，第二次选择在 7－8 (RSE=1.3343－1.3436)。本文对不同轮伐期的tmax和其他性状的早期选择也作了探讨。

超高温陶瓷的热震强度突变机制

<正>对采用热压烧结工艺(1950℃,40MPa,保温保压1h)制备的两种超高温陶瓷,ZrB_2+20%SiC+5%X和ZrB_2+20%SiC+15%Y(体积分数)的抗热震性能进行了实验和理论研究。首先,在对两类材料的基本热学和力学性能参数进行系统测定的基础上,对它们进行从200℃到1000℃的热震处理,热震介质(水)的温度分别从

基于现场总线技术的电气控制系统的设计

本文介绍了现场总线的概念、协议模型和相关标准,分析和总结了工业过程控制系统通信网络要求和电气控制系统的功能要求,提出基于现场总线技术实现电气系统和过程控制系统的集成的解决方案,该方案是控制系统现场网络的发展方向。

~(230)Ac β延发裂变

本文叙述了远离beta稳定线新核素合成尤其是beta延发裂变研究的重要意义,介绍了beta延发裂变先驱~(230)Ac的搜索及其延发裂变几率的测定。

RS与GIS在城市热岛效应研究中的应用

以 TM热红外波段的遥感图象数据 ,结合遥感图象处理软件和地理信息系统软件分别对各种城市用地类型及市内各城区的光谱反射值进行统计 ,同时 ,也对市区和郊区的气象数据进行统计。根据热岛效应的特征、空间分布及其变化 ,提出了相应的防治对策。

大连市城市生态系统发展趋势研究

在对大连市城市生态系统进行系统分析的基础上，用系统动力学和灰色系统等方法探讨了大连市城市生态系统在３种不同策略下的发展趋势，为大连市城市规划和发展提供了科学依据和对策．

环境变化对苔藓植物物种多样性的影响:以上海徐家汇地区为例

为了探讨区域环境变化对苔藓植物物种多样性的影响,作者通过文献查阅、实地调查、标本查检和鉴定,对20、21世纪初上海徐家汇地区苔藓植物种类组成进行了比较分析。结果表明,20世纪初该地区记载有24种苔藓植物,其中15种是以徐家汇为模式产地发表的新种,但目前仅有7种(包括6种1亚种)仍被接受;该地区现有21种苔藓植物分布。经历100年后,环境条件的改变对其苔藓植物物种多样性的影响并不显著,但却使其种类组成发生了根本性变化。20世纪初以徐家汇为模式产地的苔藓植物,目前除尖叶匍灯藓(Plagiomnium acutum)外,其余都已从其模式产地消失。而以葫芦藓科和真藓科为代表的土生苔藓植物数目明显增加。多种世界广布、抗干扰能力强的伴人苔藓植物成为主要种类。树附生苔藓植物的种类组成发生变化,种数也相对100年前明显减少。此外,作者对城市苔藓植物的保护提出了建议。