Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m

We report on a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/mu m(2). The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 mu m and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 mu m is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang [Appl. Phys. Lett. 67, 566 (1995)]. (C) 2000 American Institute of Physics. [S0003-6951(00)00628-8].

Quantum well controller

A quantum well controller (QWC) consisting of a direct-gap/indirect-gap quantum well and a doping interface is proposed to control the dynamic operation of the Gunn active layer. Through the Monte Carlo simulation a new relaxation mode for this new device is found. The oscillation and amplification behavior of the Gunn active layer under the control of the QWC is investigated theoretically and experimentally. All work demonstrates the great control capacity of the QWC and provides a new way to improve the performance of semiconductor devices. A new oscillation diode made of the QWC and a Gunn active layer has been designed and fabricated. In the 8 mm band the highest pulse output power of these diodes is 2.55 W and the highest conversion efficiency is 18%.

Low-threshold diode-pumped CW passively mode-locked Nd:YVO4 lase

A low-threshold passively continuous-wave (CW) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor saturable absorber mirror (SESAM). The threshold for continuous-wave mode-locked is relatively low, about 2.15 W. The maximum average output power was 2.12 W and the optical to optical conversion efficiency was about 32%. The pulse width was about 15 ps with the repetition rate of 105 MHz. (C) 2008 Elsevier GmbH. All rights reserved.

100kW太阳能制冷空调系统

我国第一座大型实用性太阳能空调热水系统在广东江门市建成投入运行。该系统采用500m 2 高效平板太阳集热器和100k W 两级吸收式制冷机。介绍了系统的一些技术参数及运行情况，分析了太阳能空调系统的经济性和应用前景，以及对节能和环境保护的意义。

有机白光电致发光器件的研究

有机电致发光显示作为最有前景的平板显示技术已经得到了越来越多的关注，而实现全色显示是其发展的必然趋势。在实现全色显示的几种方法中，利用白光电致发光器件加彩色滤光膜技术具有可实现高分辨率和简单加工的优势，而且可应用液晶显示器的彩色滤光膜技术，所以可能成为未来全彩色化的主流技术。由于白光有机电致发光器件在全色显示以及照明等方面具有的潜在应用价值，从而引起了人们越来越多的研究兴趣，近十年的研究也不断地取得新的突破。然而从目前的研究来看，白光器件距离大规模的商业化应用还有一定的距离，存在的问题突出地表现在低的发光效率和亮度以及器件的稳定性等方面。在本文中，我们系统的研究了两种类型的有机白光器件。采用染料掺杂的方法，通过多层结构对载流子的注入和传输以及激子复合区的调控实现了白光有机发光器件，这种白光有机电致发光器件具有高效率、高亮度、良好光谱稳定性的特点。制备的器件最高发光亮度为17100ed／mZ，电流效率和功率效率分别为13．1cd／A和5．51耐W。对于荧光有机小分子材料制备的白光器件来说，这是到目前为止报道的较为理想的实验结果。研究了利用叠层结构制备白光有机电致发光器件的新方法，采用电荷生成层将几个发光单元串接起来，各个发光单元之间互不影响，由几个发光单元分别发出的不同颜色的光叠加，最终形成白光发射。这种叠层结构的器件，具有高效率、光谱稳定性好的优点，制备的器件最高亮度loZooed／m2，最大电流效率10．7cd／A，最大功率效率为2．5Inm/W。这是目前首次用叠层器件结构制备出的白光有机发光器件的最好结果。

808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice

808 nm high-power laser diodes are gown by MBE. In the laser structure, the combination of Si-doped GRIN (graded-index) region adjacent to n-AlGaAs cladding layer with reduced Be doping concentration near the active region has been used to diminish Be diffusion and oxygen incorporation. As compared with the laser structure which has undoped GRIN region and uniform doping concentration for Si and Be, respectively, in the cladding layers, the slope efficiency has increased by about 8%. Typical threshold current density of 300 A/cm(2) and the minimum threshold current density of 220 A/cm(2) for lasers with 500 mu m cavity length are obtained. A high slope efficiency of 1.3 W/A for coated lasers with 1000 mu m cavity length is also demonstrated, Recorded CW output power at room temperature has reached 2.3 W.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

LD Side-Pumped Passive Mode-Locked TEM00 Nd:YAG Laser Based on SESAM

We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

Characteristics of plasma induced by interaction of a free-oscillated laser pulse with a coal target in air and combustible gas

Plasma in the air is successfully induced by a free-oscillated Nd:YAG laser pulse with a peak power of 10(2-3) W. The initial free electrons for the cascade breakdown process are from the ablated particles from the surface of a heated coal target, likewise induced by the focused laser beam. The laser field compensates the energy loss of the plasma when the corresponding temperature and the images are investigated by fitting the experimental spectra of B-2 Sigma(+) -> X-2 Sigma(+) band of CN radicals in the plasma with the simulated spectra and a 4-frame CCD camera. The electron density is estimated using a simplified Kramer formula. As this interaction occurs in a gas mixture of hydrogen and oxygen, the formation and development of the plasma are weakened or restrained due to the chaining branch reaction in which the OH radicals are accumulated and the laser energy is consumed. Moreover, this laser ignition will initiate the combustion or explosion process of combustible gas and the minimum ignition energy is measured at different initial pressures. The differences in the experimental results compared to those induced by a nanosecond Q-switched laser pulse with a peak power of 10(6-8) W are also discussed. (C) 2009 Professor T. Nejat Veziroglu. Published by Elsevier Ltd. All rights reserved.

不同种植制度土壤氧化还原酶活性和动力学特征

土壤质量与土壤的生物学性质密切相关,种植制度对土壤生物学特性的影响研究对土壤质量管理具有重要的意义。以黑龙江853农场不同种植制度土壤为研究对象,探讨种植制度对土壤理化性质,过氧化氢酶、脱氢酶活性和动力学特征的影响。主要研究结果:农作物轮作有利于提高土壤全碳含量,而大豆连作和玉米-大豆轮作使土壤有效氮和全氮含量提高,大豆连作土壤pH显著低于其它作物连作及轮作处理,全磷含量显著高于其它处理;2种轮作体系均提高土壤过氧化氢酶活性和催化能力,且催化能力的提高源于酶的Km降低(即酶-底物亲合力提高);玉米-小麦-大豆轮作提高土壤脱氢酶活性及催化能力,其催化能力的提高由2个动力学参数的变化共同决定,禾本科作物连作土壤动力学参数与豆科作物种植(大豆连作及与禾本科轮作)具有显著差异。本文的研究表明,合理的轮作方式是提高土壤生物学活性的有效手段。

Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes

We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq(3)) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resulting in a large increase in luminance and efficiency. The maximum luminance, current efficiency, and power efficiency reach 21 000 cd/cm(2), 6.5 cd/A, and 3.5 lm/W, respectively, which are 40%-50% higher in efficiency than that of IBOLEDs with cesium carbonate (Cs2CO3) doped Alq(3) as the electron injection layer, where the efficiencies are only 4.5 cd/A and 2.2 lm/W.

Investigation of facilitated ion-transfer reactions at high driving force by scanning electrochemical Microscopy

The kinetics of facilitated ion-transfer (FIT) reactions at high driving force across the water/1,2-dichloroethane (W/DCE) interface is investigated by scanning electrochemical microscopy (SECM). The transfers of lithium and sodium ions facilitated by dibenzo-18-crown-6 (DB18C6) across the polarized W/DCE interface are chosen as model systems because they have the largest potential range that can be controlled externally. By selecting the appropriate ratios of the reactant concentrations (Kr c(M)+/c(DB18C6)) and using nanopipets as the SECM tips, we obtained a series of rate constants (k(f)) at various driving forces (Delta(O)(W) phi(ML+)(0') - Es, Delta(O)(W) phi(ML+)(0') is the formal potential of facilitated ion transfer and Es is the potential applied externally at the substrate interface) based on a three-electrode system. The FIT rate constants k(f) are found to be dependent upon the driving force. When the driving force is low, the dependence of 1n k(f) on the driving force is linear with a transfer coefficient of about 0.3. It follows the classical Butler-Volmer theory and then reaches a maximum before it decreases again when we further increase the driving forces. This indicates that there exists an inverted region, and these behaviors have been explained by Marcus theory.

Facilitated ion transfer across the micro-liquid /liquid interface supported at the tip of a silanized micropipette

Glass micropipettes with silanized inner walls can be filled with an organic solvent for voltammetric measurements in an aqueous solution. This arrangement was employed to investigate systematically the mechanism of facilitated potassium ion transfer by an ionophore dibenzo-18-crown-6 (DB18C6) across a micro-water/1.2-dichloroethane(W/DCE) interface supported at the tip of a silanized micropipette. Our experimental results verify that this facilitated ion transfer across the liquid/liquid interface did occur by an interfacial complexation-dissociation process (TIC-TID mechanism). The ratio of the diffusion coefficient of DB18C6 to that of its complexed ion in the DCE phase was calculated to be 1.74 +/- 0.07.

A dinuclear aluminum 8-hydroxyquinoline complex with high electron mobility for organic light-emitting diodes

A dinuclear aluminum 8-hydroxyquinoline complex (DAlq(3)) with improved electron mobility was designed for organic light-emitting diodes. The electron mobility in DAlq(3) was determined via transient electroluminescence (EL) from bilayer devices with structure of indium tin oxide (ITO)/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidine (NPB)/DAlq(3)/Mg:Ag. It was found that the electron mobility in DAlq(3) is between 3.7-8.4x10(-6) cm(2)/Vs at electric fields ranging between 1.2x10(6) and 4.0x10(6) V/cm, which is a factor of two higher than that in Alq(3). The DAlq(3) also shows a higher EL efficiency of 2.2 cd/A (1.2 Lm/W), as compared to Alq(3) with an EL efficiency of 2.0 cd/A (1.0 Lm/W), which is attributed to more balanced electron and hole recombination due to the improved electron mobility of DAlq(3).

Half-sandwich cyclopentandienyl molybdenum and tungsten nitrosyl complexes containing bidentate sulfur ligands

Half-sandwich nitrosyl complexes Cp*M(NO)I-2 (M = Mo, or W) react with dithiocarbamates (NaS2CNMe2 and NaS2CNEt2) in THF to form of complexes: Cp*Mo(NO)I (S2CNMe2) (1), Cp*Mo(NO)I(S2CNEt2) (2), Cp*W(NO)I(S2CNMe2) (3) and Cp*W(NO)I(S2CNEt2) (4) in high yields. Treatments of Cp*M(NO)I-2 (M = Mo, W) or [CpMo(NO)I-2](2) with phosphinodithioate (NaS2PMe2) and phosphorodithioate [(NH4)S2P(OMe)(2)] result in complexes: Cp*Mo(NO)I(S2PMe2) (5a), CpMo(NO)I (S2PMe2) (5b), Cp*Mo(NO)(S2PMe2)(2) (6a), CpMo (NO) (S2PMe2)(2) (6b) and Cp*Mo(NO)I[S2P(OMe)(2)] (7), Cp*W(NO)I(S2PMe2) (8), Cp*W(NO) I[S2P(OMe)](2) (9). Treatment of (5a) and (5b) with an excess of NaS2PMe2 gives (6a) and (6b). The complexes have been characterized by their elemental analyses, i.r., H-1, C-13-n.m.r. and by EI-MS spectrometry.