A two-step backoff scheme for improving the performance of the IEEE 802.11 distributed coordination function

This paper describes the binary exponential backoff mechanism of 802.11 distributed coordination function (DCF), and introduces some methods of modifying the backoff scheme. Then a novel backoff scheme, called Two-step Backoff scheme, is presented and illustrated. The simulation process in OPNET environment has been described also. At last, the analysis and simulation results show that the Two-step backoff scheme can enhance the performance of the IEEE 802.11 DCF.

A power-saving scheme for IEEE 802.11 Ad hoc networks

In the Wireless Local Area Networks (WLANs), the terminals are often powered by battery, so the power-saving performance of the wireless network card is a very important issue. For IEEE 802.11 Ad hoc networks, a power-saving scheme is presented in Medium Access Control (MAC) layer to reduce the power consumption by allowing the nodes enter into the sleep mode, but the scheme is based on Time-Drive Scheme (TDS) whose power-saving efficiency becomes lower and lower with the network load increasing. This paper presented a novel energy-saving mechanism, called as Hybrid-Drive Scheme (HDS), which introduces into a Message.-Drive Scheme (MDS) and combines MDS with the conventional TDS. The MDS, could obtain high efficiency when the load is heavy; meanwhile the TDS has high efficiency when the network load is small. The analysis shows that the proposed HDS could obtain high energy-efficiency whether the network load is light or heavy and have higher energy-saving efficiency than conventional scheme in the IEEE 802.11 standard.

微过氧化酶-11电化学行为的研究

生物分子的电化学行为与生命过程直接相关,通过对生物大分子电子传递反应机理的研究,可获得有关生理过程的重要信息.该论文主要研究内容和结论如下:1.研究了用共价键合法、Nafion膜法、自组装法和吸附法制备的MP-11修饰电极,发现用吸附法来制备MP-11修饰电极有方法简单,稳定性较好的优点.2.首次利用电化学方法研究了赖氨酸和精氨酸与MP-11配位后对MP-11的电化学性能的影响.3.研究了MP-11对NO还原的电催化作用.4.首次用傅立叶变换表面增强拉曼光谱研究了粗糙银电极表面MP-11的结构和吸附方式.5.首次研究了细胞色素c在尼龙膜修饰金电极上的电化学行为.

A面(11-20)ZnO薄膜中杂质的偏振PL谱研究

本文通过分析A面(11-20)ZnO薄膜的低温PL(光致发光)光谱偏振特性来研究ZnO光致发光谱中杂质峰的来源.低温(4 K)下观察到476、479 nm两处新的杂质峰以及390 nm处激子峰,根据两个杂质峰的偏振特性,初步判定476nm峰来源于氧空位能级到价带轻空穴的跃迁,479 nm峰来源于氧空位价带重空穴的跃迁.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode