Nonpolarizing beam splitter designed by frustrated total internal reflection inside a glass cube

A method for the design of an all-dielectric nonpolarizing prism beam splitter utilizing the principle of frustrated total internal reflection is reported. The nonpolarizing condition for a prism beam splitter is discussed, and some single layer design examples are elaborated. The concept can be applied to a wide range of wavelengths and arbitrary transmittance values, and with the help of a computer design program examples of 400-700 nm, T-p = T-p = 0.5 +/- 0.01, with incident angles of 45 degrees and 62 degrees are given. In addition, the sensitivity and application of the design are also discussed. (c) 2006 Optical Society of America.

云南18 个民族Y染色体双等位基因单倍型频率的主成分分析

世居云南的少数民族中,壮、傣、水、布依、布朗、德昂、佤、彝、白、怒、哈尼、傈僳、拉祜、纳西、景颇、阿昌、基 诺和独龙18 个民族是由“羌”、“濮”、“越”3 大部落群体演化而来,是云南的土著居民。利用PCR2RFL P 方法对这18 个土著民族进行Y染色体上13 个双等位基因位点进行基因分型。结果显示,不同历史族源的民族群体在Y染 色体双等位基因单倍型分布上具有一定的差异:在百越后裔民族群体中以单倍型H11 、H12 为主要分布;在氐羌后 裔民族中以单倍型H5 、H6 和H8 为主要分布;在百濮后裔民族群体中主要单倍型分布为H6 、H8 和H11 。进一步 主成分分析表明,百越后裔民族群体和氐羌后裔民族在主成分图上聚为两组,提示父系基因库有不同的来源,与历 史记载相印证。

南极中山站、长城站附近18个湖泊生态学特征的逐步判别分析

南极中山站、长城站附近１８个湖泊生态学特征的逐步判别分析蔡庆华，王洪铸，梁彦龄（中国科学院水生生物研究所，武汉４３００７２）关键词南极，湖泊，生态学特征，逐步判别分析，拉斯曼丘陵，乔治王岛ＳＴＥＰＷＩＳＥＤＩＳＣＲＩＭＩＮＡＮＴＡＮＡＬＹＳＩＳＦＯＲ...

无机阴离子在涂敷十六烷基吡啶的C_(18)键合相柱上的分离和测定

<正> 近年来,离子相互作用色谱法得到了迅速发展,使用这种方法,不仅可用有机树脂作固定相,同样可使用高效的键合固定相,并且可以通过改变离子相互作用,试剂在流动相中的浓度或涂敷在固定相上的量来改变柱的交换容量。实验使用常规的液相色谱仪,易于方法的广泛应用。在无机阴离子的分离中,这一方法显示了优越的分离效率。 本文研究了在涂敷十六烷基吡啶的C_8键合固定相上分离无机阴离子,并利用一些无机阴离子在

Isolation and characterization of 18 polymorphic microsatellite markers in Chinese mandarin fish Siniperca chuatsi (Basilewsky)

Eighteen microsatellite markers were isolated and characterized using an enrichment protocol in the Chinese mandarin fish Siniperca chuatsi (Basilewsky), a commercially important piscivorous fish in China. Out of 48 pairs of primers designed, 18 loci exhibited polymorphism with three to six alleles (mean 4.4 alleles/locus) and average observed heterozygosity ranged from 0.633 to 0.833 (mean 0.748) in a test population from Dongting Lake of China. Except for two loci, all other 16 loci were in the Hardy-Weinberg equilibrium. These markers would be useful for such studies as population genetics, ecology and selective breeding of the Chinese mandarin fish in future.

Enhancement of quality factor for TE whispering-gallery modes in microcylinder resonators

The enhancement of quality factor for TE whispering-gallery modes is analyzed for three-dimensional microcylinder resonators based on the destructive interference between vertical leakage modes. In the microcylinder resonator, the TE whispering-gallery modes can couple with vertical propagation modes, which results in vertical radiation loss and low quality factors. However, the vertical loss can be canceled by choosing appropriate thickness of the upper cladding layer or radius of the microcylinder. A mode quality factor increase by three orders of magnitude is predicted by finite-difference time-domain simulation. Furthermore, the condition of vertical leakage cancellation is analyzed.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

A photonic wire-based directional coupler based on SOI

A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 mu m x 0.34 mu m, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 mu m, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 +/- 0.4 dB coupling loss between the taper fibers and the polished sides of the device. (c) 2008 Elsevier B.V. All rights reserved.

Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions

We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V.cm for a 3V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0V bias, due to free carrier absorption. (C) 2009 Optical Society of America

Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at bit-error-rate of 10(-1)0 is confirmed. (c) 2005 Elsevier B.V. All rights reserved.

Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:18:15Z No. of bitstreams: 1 Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide.pdf: 564778 bytes, checksum: 1eb1246461d4a3fcc99e870bda90f9b4 (MD5)

Broadband external cavity tunable quantum dot lasers with low injection current density

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.