固相微萃取与色谱联用方法分析水中12种有机氯化合物

运用顶空固相微萃取与色谱联用方法(HS-SPME-GC)对水中的残留有机氯化合物进行了分析.对影响HS-SPME-GC分析灵敏度的各种实验因素如涂层种类、萃取温度、平衡时间、离子浓度等进行了讨论,并将该方法与固相萃取法(SPE)、液液萃取法(LLE)作了对比;同时考察了常见环境共存污染物直链烷基苯磺酸钠(LAS)对几种方法的影响.

红球藻水生748株(Haematococcus sp.HB748)培养基的选择与对维生素B_(12)的需求

比较了红球藻HB748株在MCM，BBM及BG－11．3种培养基中的生长．结果表明：HB748在这3种培养基中前4d的平均生长速率分别为0．97d－1，0．77d－1和0．63d－1，存在显著差异；然而，在BBM和BG－11中添加MCM中所含等量VB12后，748株在3种培养基中的生长速率趋于一致，表明VB12，是HB748维持较好的前期生长的必需成分；在VB12的需求满足后．3种培养基无机组分的差异对HB748前期生长影响甚微．

12路并行10Gb/s甚短距离传输系统

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy

ZnO film of 8 mu m thickness was grown on a sapphire (0 0 1) substrate with a GaN buffer layer by a novel growth technique called metal-source vapor phase epitaxy (MVPE). The surface of ZnO film measured by scanning electron microscope (SEM) is smooth and shows many regular hexagonal features. The full width at half maximum (FWHM) of ZnO(0 0 2) and (1 0 2) omega-scan rocking curves are 119 and 202 arcsec, corresponding a high crystal quality. The status of the strain in ZnO thick film was particularly analyzed by X-ray diffraction (XRD) omega-20 scanning. The results show that the strain in ZnO film is compressive, which is also supported by Raman scattering spectroscopy. The compressive strain can solve the cracking problem in the quick growth of ZnO thick film. (c) 2008 Elsevier Ltd. All rights reserved.

Enhancement of stimulated emission in 12-fold symmetric quasi-crystals

In this paper, we investigate the stimulated emission in a 12-fold symmetric quasiperiodic photonic crystal. The stimulated emission peaks in the quasiperiodic photonic crystal are more abundant and stronger than those in a periodic crystal. Also, more stimulated emission peaks appear as the crystal size and the gain increase, and some frequencies of the peaks are independent of the incident direction. These phenomena may be due to wave localization in the quasiperiodic photonic crystal.

Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors

High-quality InAsxSb1-x (0 < x <= 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2x10(4) cm(2) V-1 s(-1) and cutoff wavelengths longer than 10 mu m at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 mu m are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 mu m with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1-x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors. (c) 2006 American Institute of Physics.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Normal-incident infrared absorption in the 8-12-mu m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 mu m is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. (C) 1998 American Institute of Physics. [S0003-6951(98)01151-6].

A 12-bit 300 MHz CMOS DAC for high-speed system applications

This paper describes a 12-bit 300 MHz CMOS DAC for high-speed system applications. The proposed DAC consists of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs. In order to ensure the linearity of DAC, a double Centro symmetric current matrix is designed by using the Q(2) random walk strategy. To minimize the feedthrough and improve the dynamic performance, the drain of the switching transistors is isolated from the output lines by adding two cascoded transistors.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

12 W high efficiency single frequency ring laser

Single-frequency output power of 12 W at 1064 nm is demonstrated. Pumped by a fiber-coupled diode laser, the Nd:YVO4 produces 58.6% of the slope efficiency with respect to absorbed pump power, and 52.7% of the optical-optical efficiency and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.11. To the best of our knowledge, this is the highest slope efficiency and optical-optical efficiency in single-frequency Nd:YVO4 ring laser. The slope efficiency of the single frequency laser is close to the limit of the efficiency. [GRAPHICS] output spectrum of the single-frequency Nd:YVO4 ring laser

SERPENT和SAFER密码算法的能量攻击

SERPENT和SAFER是AES的两个候选算法 ,本文使用能量攻击方法对它们进行了深入分析 ,结果表明 :对于 2 5 6、192和 12 8比特密钥的SERPENT算法 ,能量攻击平均需分别进行 2 159、2 119和 2 79次试验 .虽然所需的试验次数实际没法达到 ,但是此攻击方法大大地降低了SERPENT的密钥规模 ,并且发现对于能量攻击 ,SERPENT有许多弱密钥 .经过深入分析和穷尽搜索可知 :能量攻击可以获取SAFER的种子密钥 .文中还给出了两种抵抗能量攻击的SER PENT的改进密钥方案以及设计密钥方案时需注意的问题 .

假单胞菌P_(12)对菲的降解

从武汉石油化工厂的活性污泥中，分离到一株可以以菲为唯一碳源和能源的假单胞菌P_(12)该菌经靛蓝产生法测定有双加氧酶，在菲无机盐培养基中生长时，有3-菲酚物质积累，经检测有一条质粒带。用丝裂霉素C消除质粒后的菌落，失去了降解菲的能力，说明P_(12)对菲的降解功能是由质粒控制的。

Pulse-front matched ultra-broadband optical parametric chirped pulse amplifier for sub-12 fs pulse generation

We propose a LBO-based ultra-broadband chirped pulse optical parametric amplifier employing pulse-front-matching to yield transform-limited sub-12-fs pulses. Measurement of the maximum possible gain bandwidth for the LBO-based OPCPA demonstrates more than 60nm gain bandwidth FWHM. For the generation of TL pulses by the use of this OPCPA, a suitable combination of OPCPA and PFM is first presented. The PFM pump geometry realizes tilt-free signal amplification, and permits this OPCPA to generate TL sub-12-fs pulses.