Raman investigation of ion-implanted ZnO films

ZnO thin films were implanted at room temperature with 80 keV N+ or 400 keV Xe+ ions. The implantation fluences of N+ and Xe+ ranged from 5.0 x 10(14) to 1.0 x 10(17)/cm(2), and from 2.0 x 10(14) to 5.0 x 10(15)/cm(2), respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm(-1) appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm(-1) was found only in N-ion implanted samples, and Raman band at 470 cm(-1) was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations.

离子注入ZnO薄膜的拉曼光谱研究；Raman investigation of ion-implanted ZnO films

室温下,用80keVN+和400keVXe+离子注入ZnO薄膜,注入剂量分别为5.0×1014—1.0×1017/cm2和2.0×1014—5.0×1015/cm2.利用拉曼散射技术对注入前后的ZnO薄膜进行光谱测量和分析,研究了样品的拉曼光谱随离子注入剂量的变化规律.实验结果发现,未进行离子注入的样品在99,435cm-1处出现两个ZnO六方纤锌相的特征峰E2low和E2high;N+和Xe+注入样品在130和578cm-1附近均出现新峰(包),N+注入样品还在274cm-1出现新峰,而Xe+注入样品在470cm-1附近出现另一新峰包,且这些新峰(包)的相对面积随注入剂量的增大而增大.通过N+和Xe+注入样品拉曼光谱的对比分析,并考虑到注入离子在样品中产生的原子位移损伤,对新峰(包)对应的振动模来源进行了分析,探索了离子注入在ZnO薄膜中引起的结构变化.