骨固定用聚乳酸/无机纳米粒子复合材料

本论文针对目前用于骨固定和骨修复的聚乳酸／无机纳米粒子复合材料的界面强度低、粒子分散不均匀以及所采用生物活性无机填料粒径较大等缺点，对轻基磷灰石及生物活性玻璃无机纳米粒子的制备、界面改性、粒子的分散、以及复合材料的制备进行了较详细的论述。另外，对材料的力学性能、结晶性能和生物相容性进行了较细统的测试和研究。（1）以磷酸和氢氧化钙为原料在40-80℃的反应条件下制备出了米粒状和棒状的HAP粒子，然后在-50℃的冷冻干燥机中干燥48h，得到白色的HAP粉末。用TEM、SEM、WAXD、FTIR等对所得产物进行了表征。研究结果表明，提高反应温度有利于生成高结晶度的长棒状HAP颗粒。此外，锻烧温度对粒子的形貌和结晶度也有很大的影响，锻烧温度越高，粒子的结晶度就越高，并且，当锻烧温度提高到900℃以上时，HAP粒子的形貌会由长棒形逐渐变成球形。（2）在高纯氢气气氛中，以辛酸亚锡为催化剂的反应条件下使左旋丙交酷开环聚合，直接接枝到HAP的表面，使HAP的粒子表面覆盖一层聚乳酸分子，使HAP的亲油性能得到提高。对表面接枝的轻基磷灰石（g-HAP）用31PMAS-NMR、FTIR、TGA、TEM、SEM和GPC进行了表征。结果表明，用此方法可在HAP表面接枝6％的PLLA。（3）用溶剂法制备了PLLA/g-HAP复合材料，并对其机械性能、结晶性能和生物相容性进行了表征。试验结果表明：与纯HAP相比，g-HAP粒子更容易均匀分散到PLLA基体中，当填料含量达到4％时，PLLAg-HAP复合材料的力学性能达到最好。由Dsc和PoM的实验结果表明，g-HAP粒子在聚合物基体中可以起到异相成核剂的作用。细胞实验结果表明，PLL刀g-HAP复合材料的细胞相容性明显优于纯的PLLA和PLLA/HAP复合材料。（4）以正硅酸乙酷（TEOS）、硝酸钙（Ca(NO3）2）和磷酸氢二按（（NH4）ZHPO4）为原料，利用在酸性溶液中水解，碱性溶液中缩聚沉淀，然后将反应液离心分离，冷冻干燥，最后在马弗炉中锻烧的方法，得到白色的5102-coo-PZos三元生物活性玻璃粉末。SEM和TEM分析结果表明，所得到生物活性玻璃是粒径在40nln左右的球形颗粒，且粒径分布非常均匀。（5）以正硅酸乙酷（TEoS）和硝酸钙（Ca（NO3）2）为原料，利用在酸性溶液中水解，碱性溶液中缩聚沉淀，然后将反应液离心分离，冷冻干燥，最后在马弗炉中锻烧的方法，得到粒径为200nm左右的球形SiO2-CaO二元生物活性玻璃粉末。

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.

THE MATRIX ANALYSIS FOR AN OPTICAL FREE-SPACE SWITCHING NETWORK AND AN OPTICAL CROSSOVER NETWORK WITH 4-FUNCTION INTERCHANGE NODES

A matrix analysis for free-space switching networks, such as perfect shuffle-exchange omega, crossover and Banyan is presented. On the basis of matrix analysis, the equivalence of these three switching networks and the route selection between input and output ports are simply explained. Furthermore, an optical crossover switching network, where MQW SEED arrays are used as electrically addressed four-function interchange nodes, is described and the optical crossover interconnection of 64 x 64, and high-speed four-function, interchange nodes is demonstrated in the experiment.

EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM

The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.

35-PERCENT EFFICIENT NONCONCENTRATING NOVEL SILICON SOLAR-CELL

An energy conversion efficiency of 35% was obtained at 1-sun, air mass 1.5 for a novel silicon cell having an area of 2.3 X 2.3 mm2 . cell. The critical feature of the cell structure is the inclusion of local defect layers near a p-n junction. The local defect layers were proven to hold the key to achieving the exceptionally high efficiency of the novel cell fabricated via noncomplex processing.

PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

THIN-FILM BIPBSRCACUO DIRECT-CURRENT SUPERCONDUCTING QUANTUM INTERFERING DEVICES OPERATING AT 78-K

Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7 x 10(-3) PHI-0/ square-root Hz and 3.6 x 10(-26) J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.

NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

The Ni/Au contact was treated with oxalic acid after annealing in O_2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

A Compact Direct Digital Frequency Synthesizer for the Rubidium Atomic Frequency Standard

A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.