Novel Oligo-9,9 '-spirobifluorenes through ortho-Linkage as Full Hydrocarbon Host for Highly Efficient Phosphorescent OLEDs

4-Bromo-9,9'-spirobifluorene is facilely synthesized, and from this precursor, two ortho-linked oligo-9,9'-spirobifluorenes, 44BSF and 24TSF, are constructed. Devices with 24TSF as the full-hydrocarbon host material and Ir(ppy)(3) or (ppq)(2)Ir(acac) as the triplet emitter show maximum external quantum efficiencies of 12.6 and 10.5% for green and red electrophosphorescence, respectively.

A Fully Diarylmethylene-Bridged Triphenylamine Derivative as Novel Host for Highly Efficient Green Phosphorescent OLEDs

A fully diarylmethylene-bridged triphenylamine derivative is efficiently synthesized. It has an almost planar triphenylamine (TPA) skeleton and exhibits excellent thermal and morphological stability. Devices with the novel TPA derivative as host material and Ir(ppy)(3) as triplet emitter show a maximum current efficiency of 83.5 cd/A and a maximum power efficiency of 71.4 Im/W for green electrophosphorescence.

Photoluminescence and electroluminescence properties of a samarium complex Sm(TTA)(3)phen

The photoluminescence (PL) and electroluminescence (EL) properties of a samarium complex Sm(TTA)(3)phen (TTA = 2-thenoyltri-fluoroacetonate, phen = 1, 10-phenanthroline) were investigated. The results show that Sm(TTA)3phen could be used as promising luminescent and electron transporting material in the electroluminescent devices. The difference between PL and EL spectra was noticed and discussed. Besides, it is noteworthy that the choice of the hole transporting layer (HTL) showed significant effect on the device performance, which was explained by the low-lying highest occupied molecular orbit (HOMO) level of Sm(TTA)3phen and the different hole injection barrier at the HTL/EML (emitting material layer) interface.

Metal printing with modified polymer bonding lithography

SOFT CONTACT LAMINATION; LIGHT-EMITTING DEVICES; LIFT-OFF; FABRICATION; TRANSISTORS; DIODES; FILMS; STAMP

Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes

Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.

Well defined carbazole-based hole-transporting amorphous molecular materials

Monodisperse carbazole-based oligomers have been synthesized via C-N bonds formation by the modified Ullmann reaction. The full characterization of their structure is presented. These derivatives are highly thermally stable amorphous compounds with glass transition temperatures of 167-171 degrees C and thermal decomposition temperatures of ca. 400 degrees C. Amorphous films of the materials were fabricated and their hole-transporting properties were tested in a light emitting device with Alq(3) as an electroluminescent and electron-transporting material.

Organic integrated pixels fabricated by a full evaporation method

An organic integrated pixel consisting of an organic light-emitting diode driven by an organic thin-film field-effect transistor (OTFT) was fabricated by a full evaporation method oil a transparent glass substrate. The OTFT was designed as a top-gate Structure, and the insulator is composed of a double-layer polymer of Nylon 6 and Teflon to lower the operation voltage and the gate-leakage current, and improve the device stability. The field-effect mobility of the OTFT is more than 0.5 cm(2) V-1 s(-1), and the on/off ratio is larger than 10(3). The brightness of the pixel reached as large as 300 cd m(-2) at a driving current of 50 mu A.

A novel way to enhance electroluminescence performance based on soluble binary and ternary europium 1,1,1-trifluoroacetylacetonate

Five rare earth complexes (Gd(acae)(3), Gd(TFacaC)(3), Eu(acaC)(3), Eu(TFacaC)(3) and Eu(TFacaC)(3)bipy; acac, acetylacetone; TFacac, 1,1,1-trifluoroacetylacetone; bipy, 2,2'-bipyridyl) were synthesized. By comparing the phosphorescence spectra of Gd(acac)(3) and Gd(TFacac)(3) the effect of the replacement of hydrogen by fluorine was examined. Organic light-emitting devices (OLEDs) based on the corresponding europium complexes as emissive layers were also fabricated by the spin-coating method. The triple-layer-type device with the structure glass substrate/ITO (indium-tin oxide)/PVK [poly(N-vinylcarbazole)]/(PVKEu)-Eu-.(TFacac)(3)bipy:PBD[2-(4-bibipyyl)-5-(4-t-butylbipyl-1,3,4-oxadiazole)]/PBD/Al (aluminum) exhibits a brighter red luminescence than those devices with Eu(acac)(3) and Eu(TFacac)(3) complexes as emissive centers upon applying a d.c. voltage.

High PL quantum efficiency of poly(phenylene vinylene) systems through exciton confinement

Photoluminescence (PL) quantum efficiency is a key issue in designing successful light-emitting polymer systems. Exciton relaxation is strongly affected by exciton quenching at nonradiative trapping centers and the formation of excimers. These factors reduce the PL quantum yield of light-emitting polymers. In this work, we have systematically investigated the effects of exciton confinement on the PL quantum yield of an oligomer, polymer, and alternating block copolymer (ABC) PPV system. Time-resolved and temperature-dependent luminescence studies have been performed. The ABC design effectively confine photoexcitations within the chromophores, preventing exciton migration and excimer formation. An unusually high (PL) quantum yield (above 90%) in the solid state is reported for the alternating block copolymer PPV, as compared to that of similar to 30% of the polymer and oligomer model compounds. (C) 2000 Elsevier Science S.A. All rights reserved.

A comparative study on the electroluminescence properties of some terbium beta-diketonate complexes

By comparing the phosphorescence spectra of Gd(acac)(3) (acac=acetylacetone), Gd(TFacac)3 (TFacac=1,1,1-trifluoroacetylacetone), the effects of fluorine replacement of hydrogen on the triplet state energy of the ligands were revealed. Fluorine can lower the triplet state energy of Hacac and make it more suitable for energy transfer towards the D-5(4) state of terbium. Organic electroluminescent devices (OELDs) with the corresponding trivalent terbium complexes as emissive layers were fabricated. Triple-layer-type devices with a structure of glass substrate/ITO (indium tin oxide)/PVK [poly(N-vinylcarbazole)]/PVK : Tb complex: PBD [2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole]/PBD/Al exhibit bright green luminescence upon applying a dc voltage. The luminance of a device with Tb(TFacac)(3)phen (1,10-phenanthroline) and Tb( TFacac) 3 as emissive layer is higher than that of the corresponding devices with Tb(acac)(3)(phen) and Tb(acac)(3) as emissive layers. The EL device with Tb(TFacac)(3)(phen) as emitter exhibits characteristic emission of Tb3+ ions with a maximum luminance of 58 cd m(-2) at 25 V.

光纤光栅滤波的瓦斯传感系统的研究

差分吸收法是进行瓦斯远距离监测的重要方法，根据瓦斯在近红外波段的吸收特性，报道了一种新型的远距离光纤瓦斯传感系统。采用1．3μm超辐射发光二极管为光源，利用光纤布拉格光栅(FBG)优良的窄带滤波特性实现了对瓦斯的差分吸收测量。和传统的干涉滤光片相比，光纤光栅滤波器插入损耗低、制备简单。系统具有全光纤化、结构简单、工作距离远、稳定性好的特点。工作距离10km，测量灵敏度为0．1％，是瓦斯爆炸极限的2％。

Multicolor luminescence in oxygen-deficient Tb3+;doped calcium aluminogermanate glasses

In this paper, we report on the multicolor luminescence in oxygen-deficient Tb3+-doped calcium aluminogermanate glasses. A simple method was proposed to control oxygen-deficient defects in glasses by adding metal Al instead of the corresponding oxide (Al2O3), resulting in efficient blue and red emissions from Tb3+-undoped glasses with 300 and 380 nm excitation wavelengths, respectively. Moreover, in Tb3+-doped oxygen-deficient glasses, bright three-color (sky-blue, green or yellow, and red) luminescence was observed with 300, 380, and 395 nm excitation wavelengths, respectively. These glasses are useful for the fabrication of white light-emitting diode (LED) lighting.

用于研究快速扫视对瞳孔光反射调制作用的新方法

瞳孔与光反射系统和快速扫视系统在解剖学和功能上都有着紧密联系，但是快速扫视系统对瞳孔的光反射系统是否有调制作用尚无报道。研究这两个系统间的调制作用，必须了解光刺激不均匀和近反应对瞳孔直径变化是否有影响。该研究以人为被试，设计了一种全新的实验方法，研究光刺激不均匀和近反应对瞳孔直径变化的影响。实验方法：将被试的一只眼用密闭的眼罩罩住给予脉冲光刺激，刺激由位于眼罩内全视野范围水平排列的一排发光二极(lightemitting diodes，LEDs)给出，被试的另一只眼用来记录眼动和瞳孔直径的变化，研究水平方向的快速扫视对瞳孔对光反射时瞳孔直径变化的影响。实验结果：比较被试注视视野内不同位置的瞳孔对光反射相对收缩率无显著差异（P=0.148, 非配对样本t 检验）。结论：该方法消除了光刺激不均匀和近反应对瞳孔直径变化的影响，可用于研究快速扫视系统对瞳孔光反射系统间的调制作用。

Spin injection in the multiple quantum-well LED structure with the Fe/AlO (x) injector

A spin-injection/-detection device has been fabricated based on the multiple quantum well light emitting diode (LED) structure. It is found that only a broad electroluminescence (EL) peak of a full width at half maximum of 8.6 nm appears at the wavelength of 801 nm in EL spectra with a circular luminescence polarization degree of 18%, despite PL spectra always show three well resolved peaks. The kinetic energy gained by injected electrons and holes in their drift along opposite directions broadens the EL peak, and makes three EL peaks converge together. The same process also destroys the injected spin polarization of electrons mainly dominated by the Bir-Aronov-Pikus spin relaxing mechanism.

Band-tail shape and transport near the metal-insulator transition in Si-doped

In the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown Si: Al0.3Ga0.7As, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si [1 x 10(19) cm(-3) for sample 1 (S1) and 9 x 10(17) cm(-3) for sample 2 (S2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). The metal-insulator transition for S1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band tail of the density of states in Al0.3Ga0.7As is found electrically through transport measurements. It is determined to have a power-law dependence, with an exponent of -1.25 for S1 and -1.38 for S2.