Experimental study on heavy ion single event effects in SOI SRAMs

Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and space applications. The use of SOI has been motivated by the full dielectric isolation of individual transistors, which prevents latch-up. The sensitive region for charge collection in SOI technologies is much smaller than for bulk-silicon devices potentially making SOI devices much harder to single event upset (SEU). In this study, 64 kB SOI SRAMs were exposed to different heavy ions, such as Cu, Br, I, Kr. Experimental results show that the heavy ion SEU threshold linear energy transfer (LET) in the 64 kB SOI SRAMs is about 71.8 MeV cm(2)/mg. Accorded to the experimental results, the single event upset rate (SEUR) in space orbits were calculated and they are at the order of 10(-13) upset/(day bit).

An outlook of heavy ion driven plasma research at IMP-Lanzhou

Since the successful completion of the cooling storage ring (CSR) project in China at the end of 2007, high qualitative heavy ion beams with energy ranging from keV to GeV/u have been available at the Heavy Ion Research Facility at Lanzhou (HIRFL). More than 10(9) 1 GeVlu C6+ particles or 10(8) 235 MeV/u Xe particles can be stored in the CSR main-ring and extracted within hundred nano-seconds during the test running, the beam parameters will be improved in the coming years so that high energy density (HED) conditions could be achieved and investigated there. Recent scientific results from the experiments relevant to plasma research on HIRFL are summarized. Dense plasma research with intense heavy ion beams of CSR is proposed here.