水热法ZnO晶体特征研究

ZnO具有优良的综合性能使其成为极有前途的下一代光电材料，水热法是一种重要的生长ZnO晶体的方法。本文对水热法生长的面积约150mm^2的ZnO晶体进行了报道，研究了晶体不同方向的生长速度、形貌特征和光学性能。X射线摇摆曲线表明晶体的质量较好。对于光学性质的分析表明晶体生长时加入H2O2能显著提高晶体的质量。494nm附近的发光带可能与氧空位有关。520nm的发光可能与Na或者Si所形成的杂质能级跃迁有关。

Al2O3衬底上生长ZnO薄膜的结构和光学特性

用脉冲激光沉积法在Al2O3（0001）衬底上沉积了ZnO薄膜。衬底温度分别为300℃、400℃、500℃、600℃和700℃。利用X射线衍射（XRD）和光致发光谱（PL）对薄膜的结构和光学性能进行研究。X射线衍射的结果表明在不同温度下生长的ZnO薄膜均具有高度c轴择优取向，衬底温度400℃时，膜的应力较小质量较高。ZnO薄膜有很强的紫外发光峰，紫外发光峰的强度与衬底温度密切相关，并发现当衬底温度从300℃增到400℃时，紫外发射峰出现6nm的蓝移。

退火对Si（111）衬底上ZnO薄膜的结构和发光特性的影响

采用磁控溅射法在硅（111）衬底上制备了C轴高度取向的ZnO薄膜，并研究了退火温度和氧气气氛对ZnO薄膜晶体质量、晶粒度大小和光致发光谱的影响。X射线衍射表明，所有薄膜均为高度C轴择优取向，当退火温度低于900℃时，随着退火温度的升高，薄膜的取向性和结晶度都明显提高。室温下对ZnO薄膜进行了光谱分析，退火后的样品均可观测到明显的紫光发射。在一定的退火温度范围内，还可以观测到明显的紫外双峰。空气中退火的样品，当退火温度达到或高于600℃还可观测到绿光发射。实验结果表明，发光峰强度随退火温度和氧气气氛不同而不

Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire (alpha-Al2O3) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 degrees C for 1 h in air.

Nonpolar a-plane ZnO films fabricated on (302)gamma-LiAlO2 by pulsed laser deposition

Nonpolar a-plane (1 1 2 0) ZnO films are fabricated on (3 0 2)gamma-LiAlO2 substrate by pulsed laser deposition. When substrate temperature is low, c-plane ZnO is dominant. As growth temperature increases to similar to 500 degrees C, pure (1 1 2 0)-oriented ZnO film can be obtained. The X-ray rocking curve of a-plane ZnO film broadens sharply when growth temperature is up to similar to 650 degrees C; such a broadening may be related to the anisotropic lateral growth rate of (1 12 0)-oriented ZnO grains. Atomic force microscopy reveals the surface morphology changes of ZnO films deposited at different temperatures. Raman spectra reveal that a compressive stress exists in the a-plane ZnO film. (C) 2007 Published by Elsevier B.V.

Synthesis and characterization of room-temperature ferromagnetism in Fe- and Ni-co-doped In2O3

Observation of room-temperature ferromagnetisin in Fe- and Ni-co-doped In2O3 samples (In0.9Fe0.1-xNix)(2)O-3 (0 <= x <= 0.1) prepared by citric acid sol-gel auto-igniting method is reported. All of the samples with intermediate x values are ferromagnetic at roomtemperature. The highest saturation magnetization (0.453 mu B/Fe + Ni ions) moment is reached in the sample with x = 0.04. The highest solubility of Fe and Ni ions in the In2O3 lattice is around 10 and 4 at%, respectively. The 10 at% Fe-doped sample is found to be weakly ferromagnetic, while the 10at% Ni-doped sample is paramagnetic. Extensive structure including Extended X-ray absorption fine structure (EXAFS), magnetic and magneto-transport including Hall effects studies on the samples indicate the observed ferromagnetism is intrinsic rather than from the secondary impurity phases. (c) 2007 Elsevier Ltd. All rights reserved.

Raman spectroscopic investigation of pure and ytterbium-doped rare earth silicate crystals

Raman spectroscopy was used to study the molecular structure of a series of selected rare earth (RE) silicate crystals including Y2SiO5 (YSO), LU2SiO5 (LSO), (Lu0.5Y0.5)(2)SiO5 (LYSO) and their ytterbium-doped samples. Raman spectra show resolved bands below 500 cm(-1) region assigned to the modes of SiO4 and oxygen vibrations. Multiple bands indicate the nonequivalence of the RE-O bonds and the lifting of the degeneracy of the RE ion vibration. Low intensity bands below 500 cm(-1) are an indication of impurities. The (SiO4)(4-) tetrahedra are characterized by bands near 200 cm(-1) which show a separation of the components of nu(4) and nu(2), in the 500-700 cm(-1) region which are attributed to the distorting bending vibration and in the 880-1000 cm(-1) region which are attributed to the symmetric and antisymmetric stretching vibrational modes. The majority of the bands in the 300-610 cm(-1) region of Re2SiO5 were found to arise from vibrations involving both Si and RE ions, indicating that there is considerable mixing of Si displacements with Si-O bending modes and RE-0 stretching modes. The Raman spectra of RE silicate crystals were analyzed in terms of the molecular structure of the crystals, which enabled separation of the bands attributed to distinct vibrational units. Copyright (C) 2007 John Wiley & Sons, Ltd.

Low-temperature hydrothermal growth of oriented [0001] ZnO film

Well-aligned ZnO films have been successfully prepared by using low-temperature hydrothermal approach on (0001) sapphire substrates that were pre-coated with a ZnO nano-layer by dip-coating. The characterizations of scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate that the ZnO films consist of hexagonal rods that grow along the c axis based on the sapphire substrates. It is found that the size of ZnO rods can be adjusted by an aqueous solution with some methenamine. (c) 2006 Elsevier B.V. All rights reserved.

Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.

Fabrication of beta-BaB2O4 layers on (001) Sr2+-doped alpha-BaB2O4 by vapor transport equilibration (VTE)

Crystalline beta-BBO layers have been successfully prepared on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates using vapor transport equilibration technique. The layers were characterized by X-ray diffraction, X-ray rocking curve and transmission spectra. The present results manifest that the VTE treatment time and powder ratio are important factors on the preparation of beta-BBO layers. beta-BBO layers with a highly (0 0 l) preferred orientation were obtained according to XRD profiles. The full width at half-maximum of the rocking curve for the layer is as low as about 1000 in., which shows the high crystallinity of the layer. These results reveal the possibility of fabricating beta-BBO (0 0 1) layers on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates by VTE. (C) 2006 Elsevier Ltd. All rights reserved.

Visible luminescence in Yb3+-doped gadolinium gallium garnets

In this paper, some results on visible luminescence performed on Yb3+-doped gadolinium gallium garnets under 165 and 940 nm excitation were presented. The upconversion luminescence was ascribed to Yb3+ cooperative luminescence and the presence of rare earth impurity ions. The gain cross-sections of Yb:GGG crystal as a function of excited-state population fraction P were studied. Emission spectra under 165 nm at 20 K showed there was no charge transfer luminescence in Yb:GGG. (c) 2006 Elsevier B.V. All rights reserved.

Investigation of the spectroscopic properties of Yb3+-doped yttrium lanthanum oxide transparent ceramic

Spectroscopic properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic were studied. Two main absorption peaks of the specimen are centered at 940 and 970 nm, which are suitable for InGaAs laser diode pumping. The main emission peaks were located at 1032 and 1075 nm with larger emission cross-section and longer fluorescence lifetime than those of Yb:Y2O3. These properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic are favorable to achieve high efficiency and high power laser output. (c) 2007 Elsevier B.V. All rights reserved.

Passively Q-switched Yb3+ laser with Yb3+-doped CaF2 crystal as saturable absorber

Passive Q-switching of a diode-pumped Yb:LYSO laser at 1060 nm with a Yb3+ ions-doped CaF2 crystal without the excited-state absorption (ESA) was demonstrated. An average output power of 174 mW with pulse duration of 5.6 mu s and repetition rate of 27 kHz have been obtained under the unoptimized conditions. And the Q-switching conversion efficiency was as high as 51.7%. (c) 2007 Optical Society of America.

Gamma-irradiation effects on Ce-doped YAG crystals grown by Cz and TGT method

Gamma-rays radiation effects on Ce:YAG crystals grown by Czochralski (Cz) and temperature gradient techniques (TGT) have been studied by means of optical absorption and luminescence spectra. Valence of Ce3+ ion changes during the gamma-ray irradiation process and this result indicates Ce4+ ion may exist in both Cz-Ce:YAG and TGT-Ce:YAG crystals. Thermally stimulated luminescence measurements reveal intense thermoluminescence peaks in gamma-irradiated Ce:YAG crystals and trap parameters were calculated by general-order kinetics expression. (C) 2006 Elsevier B.V. All rights reserved.

在钛酸锶衬底上外延生长ZnO薄膜及其性能研究

用脉冲激光淀积法（PLD）在（111）面SrTiO3衬底上外延生长ZnO单晶薄膜。样品分别在衬底温度为350℃、500℃、600℃下外延生长。X射线衍射（XRD）的结果表明,所得的ZnO单晶薄膜结晶性能好,只出现（002）和（004）两个衍射峰,（002）峰的半高宽度（FWHM）为0.23°。在荧光光谱中我们只观察到来源于带边激子跃迁的强UV发射,并且随着生长温度的升高,紫外峰的强度逐渐增强。样品的SEM图像表明所得ZnO薄膜表面平整,晶粒均匀。衬底温度为600℃时,所得到的ZnO薄膜结构完整,晶粒尺寸最