Research Progress On Thermal Protection Materials And Structures Of Hypersonic Vehicles

Hypersonic vehicles represent future trends of military equipments and play an important role in future war. Thermal protection materials and structures, which relate to the safety of hypersonic vehicles, are one of the most key techniques in design and manufacture of hypersonic vehicles. Among these materials and structures, such as metallic temperature protection structure, the temperature ceramics and carbon/carbon composites are usually adopted in design. The recent progresses of research and application of ultra-high temperature materials in preparation, oxidation resistance, mechanical and physical characterization are summarized.

以慢原子束方式进行原子转移的双磁光阱系统

建立了一套用于玻色．爱因斯坦凝聚实验的铷原子双磁光阱装置．从低速强源中获得慢原子柬，向超高真空磁光阱进行原子转移．低速强源磁光阱与超高真空磁光阱之间可维持3个量级的压强差，超高真空磁光阱的真空度最高可达1×10^-9Pa．慢原子束的束流通量达1×10^9／s．约4×10^8个^17Rb原子被装载到超高真空磁光阱中．还讨论了两种典型情况下磁光阱中装载的最大原子数．

超大功率二维半导体激光列阵并路自适应稳模技术

半导体列阵量子效率高,输出波长范围涵盖570～1600nm,工作寿命可达数百万小时,叠层列阵可提供超高功率激光输出,在工业、医学等很多领域具有非常广阔的应用前景。但列阵在自由运行时,各发光单元发出的光是不相干的,输出质量差,采用1/4Talbot外腔镜耦合技术,列阵实现了空间锁相最高阶超模,然而唯有基超模远场分布是中心单瓣结构,输出接近衍射极限。为得到最小谱宽、最小发散角、最大功率密度输出,必须将外腔镜倾斜β=λ/2d(λ为工作波长,d为列阵周期),这使得仅有基超模光能成像于发光单元内而被允许振荡。应用此

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.

Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Si doping effect on self-organized InAs/GaAs quantum dots

In situ ultra high vacuum scanning probe microscopy (SPM) and low-temperature :photoluminescence (PL) studies have been performed on Si-doped self-organized InAs/GaAs quantum dots samples to investigate the Si doping effects. Remarkably, when Si is doped in the sample, according to the SPM images, more small dots are formed when compared with images from undoped samples. On the PL spectra, high-energy band tail which correspond to the small dots appear, with increasing doping concentration, the integral intensity of the high-energy band tail account for the whole peak increase too. We relate this phenomenon to a model that takes the Si atom as the nucleation center for QDs formation. (C) 1999 Elsevier Science B.V. All rights reserved.

The whispering gallery mode in photonic crystal ring cavity - art. no. 698438

Whispering gallery modes (WGMs) in microcavities possess ultra-high cavity Q factor. Such microcavity are easy to be fabricated, so WGMs have attracted much attention in the area of photonics and integrated photonic circuits. It is well known that the effect of total internal reflection restricts the size of this mirocavity. Such drawback goes against the integration of photon. However, the photonic crystal microcavities (PCMC) make a breakthrough recently. The WGMs in the PCMC are possible to gain both ultra-high Q and ultra-small mode volume. In this paper, the property of the mode in photonic crystal ring cavity is analyzed by FDTD and PWE. By modifying the airholes in the corners of the ring cavity, we can obtain the WGM. Also the Q factor of WGM in photonic crystal ring cavity is calculated. This favors the design of the photonic crystal microcavity components.

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Ultrasensitive Detection of Infrared Photon Using Microcantilever: Theoretical Analysis

We present a new method for detecting near-infrared, mid-infrared, and far-infrared photons with an ultra-high sensitivity. The infrared photon detection was carried out by monitoring the displacement change of a vibrating microcantilever under light pressure using a laser Doppler vibrometer. Ultrathin silicon cantilevers with high sensitivity were produced using micro/nano-fabrication technology. The photon detection system was set up. The response of the microcantilever to the photon illumination is theoretically estimated, and a nanowatt resolution for the infrared photon detection is expected at room temperature with this method.

CSR超高真空排气系统的研究

兰州重离子加速器冷却储存环（HIRfL-CSR）属于国家“九·五”重大科学工程，全长约500m，超高真空系统贯穿整个装置。CSR真空排气系统是超高真空系统的重要组成部分。本论文从CSR真空系统排气系统的选择，排气系统的性能测试以及配置优化，压力分布计算，残余气体分析等多个方面对兰州重离子加速器冷却储存环（HIRFL-CSR）超高真空排气系统做了研究。计算和实验结果均表明CSR真空系统排气系统的选择配置完全满足3．5X10-gPa的真空度要求。

Wear mechanism map of uncoated HSS tools during drilling die-cast magnesium alloy

A wear mechanism map of uncoated high-speed steel (HSS) tools was constructed under the conditions of dry-drilling die-cast magnesium alloys. Three wear mechanisms appear in the map based on the microanalysis of drilled HSS tools by SEM, including adhesive wear, abrasive wear and diffusion wear. In the map, there exists a minor wear region which is called "safety zone". This wear mechanism map will be a good reference for choosing suitable drilling parameters when drilling die-cast magnesium alloys.

激光诱导等离子体光谱法检测合金钢组分的实验研究

激光诱导击穿光谱技术(LIBS)具有无需样品制备,原位快速分析,可进行实时控制的特点使其在钢铁冶炼控制中具有巨大的实际应用价值。本文以波长为1 064 nm的Nd∶YAG调Q固体激光器为激发光源,CCD为探测器,高合金钢GBW01605—01609系列为样品,在建立的LIBS实验装置上研究激光与合金钢之间的相互作用。系统地研究了观测距离、激光能量对高合金钢样品中激光诱导击穿谱特性的影响,并分析了LIBS信号的时间分辨特性,确定了将LIBS用于合金钢微量元素定量分析时的最佳实验条件。

UHF RFID 射频前端及其编解码设计

射频识别（Radio Frequency Identification，RFID）技术，是一种利用射频通信实现的非接触式的数据采集和自动识别技术（以下通称RFID技术）。而超高频射频识别技术（Ultra High Frequency RFID，UHF RFID）具有识别距离远、识别准确率高、识别速度快、抗干扰能力强等特点而成为当前研发的热点。UHF RFID读写器的难点就在于射频前端电路和基带编解码的设计，它们设计的好坏直接决定了读写器的性能好坏。 本文首先通过介绍UHF RFID读写器射频前端设计的基本原理，采用射频通用收发模块进行射频前端设计的方法，给出了以ADF7020收发芯片为核心的UHF RFID读写器的射频前端的整体设计和具体的实现电路，设计了包括射频收发电路、射频前端匹配电路、滤波电路、环行器电路、功率放大电路等。 其次根据EPC Gen-2的协议标准进行了UHF RFID读写器的基带编码解码的仿真设计，然后开发了以FPGA为核心的完整的数字基带硬件电路，实际调试表明整个基带编解码软件在硬件基带PCB板上运行状况良好，并能对EPC Gen-2的协议标准的命令进行正确的编码解码。 最后通过研究学习软件无线电的理论和开发方法，把UHF　RFID读写器的射频前端分成射频模拟前端和射频数字前端，给出了一种基于软件无线电思想的UHF RFID射频数字前端设计模型，并借助于SIMULINK中的信号处理工具箱对构建的数字前端的进行仿真验证，仿真结果验证了用软件无线电实现UHF RFID数字前端的可行性。