Toward high-performance polymer solar cells: The importance of morphology control

Polymer solar cells have the potential to become a major electrical power generating tool in the 21st century. R&D endeavors are focusing on continuous roll-to-roll printing of polymeric or organic compounds from solution-like newspapers-to produce flexible and lightweight devices at low cost. It is recognized, though, that besides the functional properties of the compounds the organization of structures on the nanometer level-forced and controlled mainly by the processing conditions applied-determines the performance of state-of-the-art polymer solar cells. In such devices the photoactive layer is composed of at least two functional materials that form nanoscale interpenetrating phases with specific functionalities, a so-called bulk heterojunction. In this perspective article, our current knowledge on the main factors determining the morphology formation and evolution is introduced, and gaps of our understanding on nanoscale structure-property relations in the field of high-performance polymer solar cells are addressed. Finally, promising routes toward formation of tailored morphologies are presented.

Organic/inorganic hybrid solar cells based on SnS/SnO nanocrystals and MDMO-PPV

SnS/SnO heterojunction structured nanocrystals with zigzag rod-like connected morphology were prepared by using a simple two-step method. Bulk heterojunction solar cells were fabricated using the SnS/SnO nanocrystals blended with poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene) (MDMO-PPV) as the active layer. Compared with solar cells using SnS nanoparticles hybridized with MDMO-PPV as the active layer, the SnS/SnO devices showed better performance, with a power conversion efficiency higher by about one order in magnitude.

Efficient tandem polymer photovoltaic cells with two subcells in parallel connection

Tandem polymer photovoltaic cells with the subcells having different absorption characteristics in series connection are widely investigated to enhance absorption coverage over the solar spectrum. Herein. we demonstrate efficient tandem polymer photovoltaic cells with the two stacked subcells comprising different band-gap conjugated polymer and fullerene derivative bulk heterojunction in parallel connection. A semitransparent metal layer combined with inorganic semiconductor compounds is utilized as the intermediate electrode of the two stacked subcells to create the required built-in potential for collecting photo-generated charges. The short-circuit current of the stacked cell is the sum of the subcells and the open-circuit voltage is similar to the subcells.

Progress in polymer solar cell

This review outlines current progresses in polymer solar cell. Compared to traditional silicon-based photovoltaic (PV) technology, the completely different principle of optoelectric response in the polymer cell results in a novel configuration of the device and more complicated photovoltaic generation process. The conception of bulk-heterojunction (BHJ) is introduced and its advantage in terms of morphology is addressed. The main aspects including the morphology of photoactive layer, which limit the efficiency and stability of polymer solar cell, are discussed in detail. The solutions to boosting up both the efficiency and stability (lifetime) of the polymer solar cell are highlighted at the end of this review.

Synthesis and characterization of soluble oligo (9,10-bisalkynylanthrylene)s

Soluble oligo(9,10-bialkynylanthryiene)s up to pentamers were synthesized by means of the Suzuki coupling reaction. A solution processed thin film field-effect transistor from pentamer OA-5b shows a charge carrier mobility of 2.95 x 10(-3) cm(2)/V center dot s.

Vectorial solution of Kukhtarev equations for doubly doped crystals and optimal choice of recording directions in nonvolatile holographic storage

Vectorial Kukhtarev equations modified for the nonvolatile holographic recording in doubly doped crystals are analyzed, in which the bulk photovoltaic effect and the external electrical field are both considered. On the basis of small modulation approximation, both the analytic solution to the space-charge field with time in the recording phase and in the readout phase are deduced. The analytic solutions can be easily simplified to adapt the one-center model, and they have the same analytic expressions given those when the grating vector is along the optical axis. Based on the vectorial analyses of the band transport model an optimal recording direction is given to maximize the refractive index change in doubly doped LiNbO3:Fe: Mn crystals. (c) 2007 Optical Society of America.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48 +/- 0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO3. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO3. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.

Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers

Single-crystal-like organic heterojunction films of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc) were fabricated by weak-epitaxy-growth method. The intrinsic properties of organic heterojunction were revealed through threshold voltage shift of field-effect transistors and measurement of single-crystal-like diodes. At both sides of the heterojunction interface 40 nm thick charge accumulation layers formed, which showed that the long carriers' diffusion length is due to the high crystallinity and low density of deep bulk traps of single-crystal-like films.

Electrolytic Deposition and Diffusion of Lithium onto Magnesium-9 Wt Pct Yttrium Bulk Alloy in Low-Temperature Molten Salt of Lithium Chloride and Potassium Chloride

The electrolytic deposition and diffusion of lithium onto bulk magnesium-9 wt pct yttrium alloy cathode in molten salt of 47 wt pct lithium chloride and 53 wt pct potassium chloride at 693 K were investigated. Results show that magnesium-yttrium-lithium ternary alloys are formed on the surface of the cathodes, and a penetration depth of 642 mu m is acquired after 2 hours of electrolysis at the cathodic current density of 0.06 A center dot cm(-2). The diffusion of lithium results in a great amount of precipitates in the lithium containing layer. These precipitates are the compound of Mg41Y5, which arrange along the grain boundaries and hinder the diffusion of lithium, and solid solution of yttrium in magnesium. The grain boundaries and the twins of the magnesium-9 wt pct yttrium substrate also have negative effects on the diffusion of lithium.

High strength Ni based composite reinforced by solid solution W(Al) obtained by powder metallurgy

The solid-solution-particle reinforced W(Al)-Ni composites were successfully fabricated by using mechanical alloying (MA) and hot-pressing (HP) technique when the content of Ni is between 45 wt% and 55 wt%. Besides, samples of various original component ratio of Al50W50 to Ni have been fabricated, and the corresponding microcomponents and mechanical properties such as microhardness, ultimate tensile strength and elongation were characterized and discussed. The optimum ultimate tensile strength under the experiment conditions is 1868 MPa with elongation of 10.21 % and hardness of 6.62 GPa. X-ray diffraction (XRD), FE-SEM and energy dispersive analysis of X-rays (EDS) were given to analysis the components and morphology of the composite bulk specimens.

Synthesis of novel maleimide-terminated thioetherimide oligomer and its bulk copolymerization with reactive solvents

This paper reports the synthesis of a novel maleimide-terminated thioetherimide oligomer and its copolymefization with reactive solvents bearing vinyl. Starting from 3-chlorophthalic anhydride and 4-chlorophthalic anhydride, 2,2',3,3'-thiodiphenyl tertracaboxylic dianhydride (3,3'-TDPA) and 3,3',4,4'-thiodiphenyl tertracaboxylic dianhydride (4,4'-TDPA) were synthesized. Thereby, a novel maleimide-terminated thioetherimide oligomer was prepared from. 3,3-TDPA, 4,4'-TDPA, 3,3'-dimethyl-4,4-diaminodiphenylmethane (DMMDA) and maleic anhydride. Binary and ternary copolymer resin were derived from corresponding binary and ternary homogeous solution consisting of thioetherimide oligomer, reactive solvent N-vinylpyrrolidone (NVP) or N,N'-dimethylacrylamide (DMAA) and divinylbenzene (DVB) as modifier, initiated either by gamma ray irradiation or by benzoyl peroxide (BPO). Thermal and mechanical properties of copolymer resin are determined and compared in terms of the kind of reactive solvent, addition of modifier DVB. The effect of initiation approach on property of final copolymer resin were studied. Phase separation and sub-transition of ternary copolymer resin induced by BPO are observed, which could be accounted for by thermal movement of DMAA molecules during thermal initiation.

Carbon ceramic electrodes bulk-modified with nanoparticles of ferrocenebutyrate-intercalated Mg-Al layered double hydroxide

Ferrocenebutyrate-intercalated layered double hydroxide (FcLDH) was prepared by the coprecipitation method and characterized by PXRD, FTIR, TEM and elemental analysis. FcLDH nanoparticles in deionized water were deposited onto the surface of graphite powder to yield graphite powder-supported FcLDH, which was subsequently dispersed into methyltrimethoxysilane-derived gels to fabricate surface-renewable, stable, rigid carbon ceramic electrodes containing the electroactive ferrocenyl group. Cyclic voltammetric study revealed that peak currents of the FcLDH-modified electrode were diffusion-con trolled in 0.1 mol l(-1) KCl aqueous solution. In addition, the formal potential of the modified electrode is related to the activity of chloride ion with a Nernst slope of 56 mV per decade.

Sol-gel derived carbon ceramic electrode bulk-modified with tris(1,10-phenanthroline-5,6-dione)iron(II) hexafluorophosphate and its use as an amperometric iodate sensor

A surface-renewable tris (1,10-phenanthroline-5, 6-dione) iron (II) hexafluorophosphate (FePD) modified carbon ceramic electrode was constructed by dispersing FePD and graphite powder in methyltrimethoxysilane (MTMOS) based gels. The FePD-modified electrode presented pH dependent voltammetric behavior, and its peak currents were diffusion-controlled in 0.1 mol/L Na2SO4 + H2SO4 solution (pH = 0. 4). In the, presence of iodate, clear electrocatalytic reduction waves were observed and thus the chemically modified electrode was used as an amperometric sensor for iodate in common salt. The linear range, sensitivity, detection limit and response time of the iodate sensor were 5 x 10(-6)-1 x 10(-2) mol/L, 7.448 muA.L/mmol, 1.2 x 10(-6) mol/L and 5 s, respectively. A distinct advantage of this sensor is its good reproducibility of surface-renewal by simple mechanical polishing.