Spectroscopic Study on Water Diffusion in Poly(ester urethane) Block Copolymer Matrix

The diffusion of water in a phase-separated biodegradable poly(ester urethane) shape-memory polymer with poly(E-caprolactone) (PCL) as the soft segment was investigated using time-resolved FTIR-ATR. On the basis of the band fitting and water ordering in drawn films, the broad water band in the 3800-2800 cm(-1) region was decomposed into four bands located at 3620, 3510, 3400, and 3260 cm(-1), and the first two components at 3620 and 35 10 cm(-1) were assigned to the vibrations of antisymmetric and symmetric stretching of water hydrogen bonded with the C=O group of the soft segment. The other two were associated with water bonded to the urethane hard segments in the forms of N-H:O-H:O=C bridge hydrogen bond and double hydrogen bonds with two C=O groups, respectively. Furthermore, band fitting and two-dimensional correlation analyses revealed that in the diffusion process, water first diffuses into the continuous soft-rich PCL phase and then into the hard-rich urethane domains, forming double hydrogen bonds with two C=O groups prior to the bridge hydrogen bond in the form of N-H:O-H:O=C.

Hydrogen Bonding and Crystallization in Biodegradable Multiblock Poly(ester urethane) Copolymer

The hydrogen bonding and crystallization of a biodegradable poly(ester urethane) copolymer based on poly(L-lactide) (PLLA) as the soft segment were investigated by FTIR. On slow cooling from melt, the onset and the progress of the crystallization of the urethane hard segments were correlated to the position, width, and relative intensity of the hydrogen-bonded N-H stretching band. The interconversion between the "free" and hydrogen-bonded N-H and C=O groups in the urethane units in the process was also revealed by 2D correlation analysis of the FTIR data. The crystallization of the PLLA soft segments was monitored by the ester C=O stretching and the skeletal vibrations. It was revealed that the PLLA crystallization was restricted by the phase separation and the urethane crystallization, and at cooling rates of 10 degrees C/min or higher, the crystallization of the PLLA soft segments was prohibited.

Low-Power Super-resolution Readout with Antimony Bismuth Alloy Film as Mask layer

Sb-Bi alloy films are proposed as a new kind of super-resolution mask layer with low readout threshold power. Using the Sb-Bi alloy film as a mask layer and SiN as a protective layer in a read-only memory disc, the super-resolution pits with diameters of 380 nm are read out by a dynamic setup, the laser wavelength is 780 nm and the numerical aperture of pickup lens is 0.45. The effects of the Sb-Bi thin film thickness, laser readout power and disc rotating velocity on the readout signal are investigated. The results show that the threshold laser power of super-resolution readout of the Sb-Bi mask layer is about 0.5 mW, and the corresponding carrier-to-noise ratio is about 20 dB at the film thickness of 50 nm. The super-resolution mechanism of the Sb-Bi alloy mask layer is discussed based on its temperature dependence of reflection.

Fabrication and amplified spontaneous emission spectrum of Er3+-doped tellurite glass fiber with D-shape cladding

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A single-mode Er3+-doped tellurite glass fiber with D-shape cladding was fabricated in this work. The characterization of amplified spontaneous emission (ASE) from this newly fabricated Er3+-doped tellurite fibers are exhibited. When pumped at 980 nm, a very broad erbium ASE nearly 150 nm around 1.53 mum is observed. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of 2 mW from Er3+-doped tellurite fiber ASE source was obtained under the pump power of 660 mW. The broad 1.53 mum emission of Er3+ in tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers. (C) 2004 Elsevier B.V. All rights reserved.

Unusual carrier thermalization in a dilute GaAs1-xNx alloy

Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62% GaAs1-xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2k(B)T, suggesting peculiar density of states and carrier dynamics of the E+ band.

Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices

The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10(-5) Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10(-6) or 2.5x10(-6) Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.

Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy

The effect of thermal annealing on the Raman spectrum of Si0.33Ge0.67 alloy grown on Si (100) by molecular beam epitaxy is investigated in the temperature range of 550-800 degrees C. For annealing below 700 degrees C, interdiffusion at the interface is negligible and the residual strain plays the dominant role in the Raman shift. The strain-shift coefficients for Si-Ge and Ge-Ge phonon modes are determined to be 915 +/- 215 cm(-1) and 732 +/- 117 cm(-1), respectively. For higher temperature annealing, interdiffusion is significant and strongly affects the Raman shift and the spectral shape.