On-Board Experimental Study Of Bubble Thermocapillary Migration In A Recoverable Satellite

An on-board space experiment of bubble thermocapillary migration was performed in the Chinese 22nd recoverable satellite in 2005. Silicone oil of nominal viscosity 5cSt was used as the continuous phase in the experiment. Air bubbles were injected into the liquid in the same direction as the constant temperature gradient in the liquid. The velocities of bubbles were obtained by recording the paths of the bubbles. The results indicate that the scaled velocity of bubbles decreases with an increase of the Marangoni number extended to 9288, which agrees with the results of previous space experiments and numerical simulation. In addition, the interaction between two bubbles was also observed in the space experiment. The trajectories and the velocities of the bubbles were obtained. The two-bubble experiment results are also consistent with the theoretical analysis.

First-passage time of Duffing oscillator under combined harmonic and white-noise excitations

The first-passage time of Duffing oscillator under combined harmonic and white-noise excitations is studied. The equation of motion of the system is first reduced to a set of averaged Ito stochastic differential equations by using the stochastic averaging method. Then, a backward Kolmogorov equation governing the conditional reliability function and a set of generalized Pontryagin equations governing the conditional moments of first-passage time are established. Finally, the conditional reliability function, and the conditional probability density and moments of first-passage time are obtained by solving the backward Kolmogorov equation and generalized Pontryagin equations with suitable initial and boundary conditions. Numerical results for two resonant cases with several sets of parameter values are obtained and the analytical results are verified by using those from digital simulation.

Microscopic Model Of Nano-Scale Particles Removal In High Pressure Co2-Based Solvents

A physical model is presented to describe the kinds of static forces responsible for adhesion of nano-scale copper metal particles to silicon surface with a fluid layer. To demonstrate the extent of particle cleaning, Received in revised form equilibrium separation distance (ESD) and net adhesion force (NAF) of a regulated metal particle with different radii (10-300 nm) on the silicon surface in CO2-based cleaning systems under different pressures were simulated. Generally, increasing the pressure of the cleaning system decreased the net adhesion force between spherical copper particle and silicon surface entrapped with medium. For CO2 + isopropanol cleaning system, the equilibrium separation distance exhibited a maximum at temperature 313.15 K in the Equilibrium separation distance regions of pressure space (1.84-8.02 MPa). When the dimension of copper particle was given, for example, High pressure 50 nm radius particles, the net adhesion force decreased and equilibrium separation distance increased with increased pressure in the CO2 + H2O cleaning system at temperature 348.15 K under 2.50-12.67 MPa pressure range. However, the net adhesion force and equilibrium separation distance both decreased with an increase in surfactant concentration at given pressure (27.6 or 27.5 MPa) and temperature (318 or 298 K) for CO2 + H2O with surfactant PFPE COO-NH4+ or DiF(8)-PO4-Na+. (C) 2008 Elsevier B.V. All rights reserved.

Influence of recording conditions on crossed-beam photorefractive gratings in doubly doped LiNbO3 crystals

The influence of the recording conditions, including the widths of the recording beams, the width ratio of the recording beams, and the recording angles, on the properties of crossed-beam photorefractive gratings in doubly doped LiNbO3 crystals is studied. A theoretical model that combines the band transport model with two-dimensional coupled-wave theory is proposed. The numerical calculations of the space-charge field, the intensity profiles of the diffracted beam, and the diffraction efficiency are presented. (C) 2006 Optical Society of America.

Wavefront conversion by local volume holograms between cylindrical and plane waves with reconstruction at a different readout wavelength

Based on the two-dimensional coupled-wave theory, the wavefront conversion between cylindrical and plane waves by local volume holograms recorded at 632.8 nm and reconstructed at 800 nm is investigated. The proposed model can realize the 90 degrees holographic readout at a different readout wavelength. The analytical integral solutions for the amplitudes of the space harmonics of the field inside the transmission geometry are presented. The values of the off-Bragg parameter at the reconstructed process and the diffracted beam's amplitude distribution are analysed. In addition, the dependences of diffraction efficiency on the focal length of the recording cylindrical wave and on the geometrical dimensions of the grating are discussed. Furthermore, the focusing properties of this photorefractive holographic cylindrical lens are analysed.

Fetntosecond pulse shaping with space-to-time conversion based on planar optics

We propose a novel structure of planar optical configuration for implementation of the space-to-time conversion for femtosecond pulse shaping. The previous apparatuses of femtosecond pulse shaping are 4f Fourier-transforming type system that is usually large, expensive, difficult to align. The planar integration of free-space optical systems on solid substrates is an optical module with the attractive advantages of compact, reliable and robust. This apparatus is analyzed in details and the design of the particular lens for femtosecond pulse shaping based on planar optics is presented. (c) 2006 Elsevier GmbH. All rights reserved.

Intensity-moments characterization of general pulsed paraxial beams with the Wigner distribution function

On the basis of the space-time Wigner distribution function (STWDF), we use the matrix formalism to study the propagation laws for the intensity moments of quasi-monochromatic and polychromatic pulsed paraxial beams. The advantages of this approach are reviewed. Also, a least-squares fitting method for interpreting the physical meaning of the effective curvature matrix is described by means of the STWDF. Then the concept is extended to the higher-order situation, and what me believe is a novel technique for characterizing the beam phase is presented. (C) 1999 Optical Society of America [S0740-3232(99)001009-1].

阵列光栅压缩器的空域特性

引入角度偏差、位移偏差作为拼接光栅系统的物理参数，定义了拼接光栅的孔径函数，利用傅里叶角谱理论研究了高斯脉冲入射拼接光栅压缩器后的远场分布特性。研究表明；出射脉冲仍然是高斯型脉冲，但包络中心发生偏移，偏移量由角度偏差量和光束口径决定；位移偏差引入的相位随着拼接光栅压缩器传递，其对远场焦斑的影响，取决于每片子光栅的非整数倍光栅常数的横向位移偏差和纵向位移偏差的综合作用。通过数值计算得到了各维偏差对阵列光栅压缩器空域特性的影响，计算表明：光栅面外角度偏差（俯仰左右）和条纹平行度偏差都必须控制在1μrad以内，

The fabrication and properties of InAs/GaAs columnal islands

A columnal islands system, which was composed of three layers of self-assembled InAs/GaAs quantum dots (QDs), has been fabricated by solid-source molecular beam epitaxy (MBE) through S-K mode on a (100) semi-insulating GaAs substrate. The effects of the thickness of GaAs space layer, the growth interruption time and the amount of InAs deposition on the emission wavelength of columnal islands were presented. The image of atomic force microscopy (AFM) indicated the columnal islands with high uniformity in size and shape. At room temperature, the emission wavelength of columnal islands with different effective heights was achieved 1.32 and 1.4 mum; however, the emission wavelength of single-layer QDs with normal height was just 1. l mum. It provides a useful and intuitive approach to artificially control the emission wavelength of a QD material system.

Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction

Phosphor-doped nano-crystalline silicon ((n))nc-Si:H) films are successfully grown on the p-type (100) oriented crystal silicon ((p) c-Si) substrate by conventional plasma-enhanced chemical vapor deposition method. The films are obtained using high H-2 diluted SiH4 as a reaction gas source and using PH3 as the doping gas source of phosphor atoms. Futhermore, the heterojunction diodes are also fabricated by using (n)nc-Si:H films and (p)c-Si substrate. I-V properties are investigated in the temperature range of 230-420K. The experimental results domenstrate that (n)nc-Si:H/(p) c-Si heterojunction is a typical abrupt heterojunction having good rectifing and temperature properties. Carrier transport mechanisms are tunneling - recombination model at forward bias voltages. In the range of low bias voltages ( V-F< 0.8 V), the current is determined by recombination at the (n)nc-Si:H side of the space charge region, while the current becomes tunneing at higher bias voltages( V-F>1.0 V). The present heterojunction has high reverse breakdown voltage ( > - 75 V) and low reverse current (approximate to nA).

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Interfacial behaviour of quantum well electrode/electrolyte: effect of redox species on EER spectra of a single quantum well GaAs vertical bar AlxGa1-xAs electrode

The EER spectra of a single quantum well GaAs\AlxGa1-xAs electrode were studied as a function of applied reverse bias in ferrocene, p-methyl nitrobenzene and hydroquinone+benzoquinone non-aqueous solutions. EER spectra were compared for different redox species and showed that a pronounced quantum-confined Stark effect and a Franz-Keldysh oscillation for a single quantum well electrode were obtained in the p-methyl-nitrobenzene- and hydroquinone+benzoquinone-containing solutions. A surface interaction of the single quantum well electrode with ferrocene led to fewer changes in the electric field of the space charge layer for reverse bias; this was suggested to explain the weak quantum-confined Stark effect and Franz-Keldysh oscillation effect observed for the single quantum well electrode in the ferrocene-containing solution. (C) 1997 Elsevier Science S.A.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.