散射中心型超分辨近场结构的非线性光学特性研究进展

超分辨近场结构(Super-RENS)技术是近年来发展起来的一种新型近场光存储技术，是目前最有实用化前景的纳米尺度近场超分辨技术之一。初步研究表明，其近场超分辨特性与非线性响应密切相关，研究其非线性光学特性对阐明物理机制、发展新的掩模材料和非线性光学应用都具有重要意义。对散射中心型超分辨近场结构非线性光学特性的最新研究进展进行了介绍和分析。

Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses

The femtosecond pump-probe technique was used to study the carrier dynamics of amorphous Ge2Sb2Te5 films. With carrier density at around 10(20)-10(21) cm(-3), carriers were excited within 1 ps and recovered to the initial state for less than 3 ns. On the picosecond time scale, the carrier relaxation consists of two components: a fast process within 5 ps and a slow process after 5 ps. The relaxation time of the fast component is a function of carrier density, which increases from 1.9 to 4.3 ps for the carrier density changing from 9.7x10(20) cm(-3) to 3.1x10(21) cm(-3). A possible interpretation of the relaxation processes is elucidated. In the first 5 ps the relaxation process is dominated by an intraband carrier relaxation and the carrier trapping. It is followed by a recombination process of trapped carriers at later delay time. (c) 2007 American Institute of Physics.

Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures

The rapid carrier capture and relaxation processes in InAs/GaAs quantum dots were studied at 77K by using a simple degenerate pump-probe technique. A rising process was observed in the transient reflectivity, following the initial fast relaxation associated with GaAs bulk matrix, and this rising process was assigned to be related to the carrier capture from the GaAs barriers to InAs layers. The assignment was modeled using Kramers-Kronig relation. By analyzing the rising process observed in the transient reflectivity, the carrier capture time constants were obtained. The measured capture times decrease with the increase of carrier concentration.

Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers

At a medium substrate temperature of 400 degrees C and a lower As flux, we have grown an ultrafast AlGaAs/GaAs photorefractive multiple quantum well (MQW) structure by molecular beam epitaxy. The as-grown sample exhibits strong photorefractive effect under the transverse Frantz-Keldysh geometry. A peak electroabsorption of 2100 cm(-1) is measured in the as-grown sample in an 11 kV/cm dc electric field, and the peak photorefractive diffraction efficiency can be 1.2%. After postgrowth annealing, the photorefractive effect becomes weak and disappears in samples annealed above 700 degrees C. Using optical transient current spectroscopy, deep levels are measured in these samples. It is found that deep levels are stable against annealing until 700 degrees C. Using a pump-probe technique, carrier lifetimes are measured at room temperature. We find that the as-grown sample has a lifetime of 20 ps, while the 700 degrees C annealed sample has a lifetime of more than 200 ps. The ultrafast lifetime in the as-grown sample is caused by point defects, not by As clusters. Our result show that AlGaAs/GaAs MQW structure grown around 400 degrees C has better performance of the photorefractive effect. (C) 1999 American Institute of Physics. [S0003-6951(99)04036-X].

Observation of quantum beat in Rb by parametric four-wave mixing

Two coupled parametric four-wave-mixing processed in Rb atoms are studied using perturbation theory, which reveals clear evidence of the appearance of quantum beat at 608 cm(-1), corresponding to the energy difference of the 7s - 5d states of Rb atoms, in the parametric four-wave-mixing signals. A pump-probe technique is utilized to observe the quantum beat. Time-varying characteristics of the quantum beat are investigated using time-dependent Fourier transform. The results show that the time-varying characteristics of the quantum beat potential tool for monitoring the dissociation of molecules.

Dynamics of excited OCS investigated by resonance-enhanced multiphoton ionization

The predissociation decay behavior of molecule carbonyl sulfide (OCS) has been investigated by resonance-enhanced multiphoton ionization spectroscopy using the pump-probe technique of dichroic femtosecond lasers in real time. The lifetime of excited OCS around 74 720 cm(-1) by two-photon absorption of 268 nm, corresponding to upsilon(1)=1 of the Rydberg state [(2)Pi(1/2)]4ppi((1)Sigma(+)), is directly determined to be tau(D)=1071+/-11 fs. This picosecond decay process indicates that the excited state is predissociative. The temporal information of dissociation enriches the knowledge of the potential-energy surface of the associative excited state.

Measurement of Electron Density Profile Behind Strong Shock Waves with a Langmuir Probe

At the shock velocity range of 7~9km/s, the variations of electron density behind strong normal shock waves are measured in a low-density shock tube by using the Langmuir electrostatic probe technique. The electron temperature, calculated based on Park’s three-temperature model, is used in interpreting the probe current data. The peak electron densities determined in the present experiment are shown to be in a good agreement with those predicted by Lin’s calculation. The experimentally obtained ratios of the characteristic ionization distance to the mean free path of freestream ahead of the shock wave are found to be in a good agreement with the existing experiments and Park’s calculation.

Time-resolved investigation of low-density plasma channels produced by a kilohertz femtosecond laser in air

By employing pump-probe back longitudinal diffractometry, the electron density and decay dynamics of a weak plasma channel created by a 1-KHz fs laser in air has been investigated. With ultrashort laser pulses of 50 fs and low energy of 0.6 mJ, we observe weak plasma channels with a length similar to 2 cm in air. An analytical reconstruction method of electron density has been analyzed, which is sensitive to the phase shift and channel size. The electron density in the weak plasma channel is extracted to be about 4x10(16) cm(-3). The diameters of the plasma channel and the filament are about 50 and 150 mu m, respectively, and the measurable electron density can be extended to less than 10(15) cm(-3). Moreover, a different time-frequency technique called linearly chirped longitudinal diffractometry is proposed to time-resolved investigate ultrafast ionization dynamics of laser-irradiated gas, laser interaction with cluster beam, etc.

Theoretical and experimental studies of the bell-jar-top inductively coupled plasma

The present paper describes a systematic study of argon plasmas in a bell-jar inductively coupled plasma (ICP) source over the range of pressure 5-20 mtorr and power input 0.2-0.5 kW, Experimental measurements as well as results of numerical simulations are presented. The models used in the study include the well-known global balance model (or the global model) as well as a detailed two-dimensional (2-D) fluid model of the system, The global model is able to provide reasonably accurate values for the global electron temperature and plasma density, The 2-D model provides spatial distributions of various plasma parameters that make it possible to compare with data measured in the experiments, The experimental measurements were obtained using a tuned Langmuir double-probe technique to reduce the RF interference and obtain the light versus current (I-V) characteristics of the probe. Time-averaged electron temperature and plasma density were measured for various combinations of pressure and applied RF power, The predictions of the 2-D model were found to be in good qualitative agreement with measured data, It was found that the electron temperature distribution T-e was more or less uniform in the chamber, It was also seen that the electron temperature depends primarily on pressure, but is almost independent of the power input, except in the very low-pressure regime. The plasma density goes up almost linearly with the power input.

Surface-Bound Selectin-Ligand Binding Is Regulated By Carrier Diffusion

Two-dimensional (2D) kinetics of receptor-ligand interactions governs cell adhesion in many biological processes. While the dissociation kinetics of receptor-ligand bond is extensively investigated, the association kinetics has much less been quantified. Recently receptor-ligand interactions between two surfaces were investigated using a thermal fluctuation assay upon biomembrane force probe technique (Chen et al. in Biophys J 94:694-701, 2008). The regulating factors on association kinetics, however, are not well characterized. Here we developed an alternative thermal fluctuation assay using optical trap technique, which enables to visualize consecutive binding-unbinding transition and to quantify the impact of microbead diffusion on receptor-ligand binding. Three selectin constructs (sLs, sPs, and PLE) and their ligand P-selectin glycoprotein ligand 1 were used to conduct the measurements. It was indicated that bond formation was reduced by enhancing the diffusivity of selectin-coupled carrier, suggesting that carrier diffusion is crucial to determine receptor-ligand binding. It was also found that 2D forward rate predicted upon first-order kinetics was in the order of sPs > sLs > PLE and bond formation was history-dependent. These results further the understandings in regulating association kinetics of surface-bound receptor-ligand interactions.

Mechanisms of femtosecond laser-induced breakdown and damage in MgO

Single-shot laser damage threshold of MgO for 40-986 fs, 800 nm laser pulses is reported. The pump-probe measurements with femtosecond pulses were carried out to investigate the time-resolved electronic excitation processes. A theoretical model including conduction band electrons (CBE) production and laser energy deposition was applied to discuss the roles of multiphoton ionization (MPI) and avalanche ionization in femtosecond laser-induced dielectric breakdown. The results indicate that avalanche ionization plays the dominant role in the femtosecond laser-induced breakdown in MgO near the damage threshold. (c) 2005 Elsevier B.V. All rights reserved.

Mechanisms of femtosecond laser-induced damage in magnesium fluoride

We studied the single-shot damage in magnesium fluoride irradiated by 800 nm femtosecond (fs) laser. The dependence of damage thresholds on the laser pulse durations from 60 to 750 fs was measured. The pump-probe measurements were carried out to investigate the time-resolved electronic excitation processes. A coupled dynamic model was applied to study the microprocesses in the interaction between fs laser and magnesium fluoride. The results indicate that both multiphoton ionization and avalanche ionization play important roles in the femtosecond laser-induced damage in MgF2. (C) 2006 Elsevier Ltd. All rights reserved.

较高阶非线性抽运-探测过程中的空间效应

在飞秒抽运一探测光谱技术中，空间分辨的探测光信号反映了在不同空间位置的材料的非线性效应。当抽运光强度增大时，探测光信号中会出现明显的高阶特别是五阶非线性效应。利用劈裂算子方法直接解决了一维非线性传播方程的问题。在数值模拟中，研究了在不同抽运强度和位置下的抽运一探测过程中的五阶非线性效应。在足够高的抽运场下，探测信号出现清晰的振荡，显示了三阶和五阶非线性效应之间的干涉。当空间位置离抽运场中心足够远时，五阶比三阶非线性效应的衰减快得多，对其物理机制和趋势进行了定性的讨论。

Splitting of femtosecond laser pulses by using a Dammann grating and compensation gratings

When a Dammann grating is used to split a beam of femtosecond laser pulses into multiple equal-intensity beams, chromatic dispersion will occur in beams of each order of diffraction and with different scale of angular dispersion because the incident ultrashort pulse contains a broad range of spectral bandwidths. We propose a novel method in which the angular dispersion can be compensated by positioning an m-time-density grating to collimate the mth-order beam that has been split, producing an array of beams that are free of angular dispersion. The increased width of the compensated output pulses and the spectral walk-off effect are discussed. We have verified this approach theoretically and validated it through experiments. It should be highly interesting in practical applications of splitting femtosecond laser pulses for pulse-width measurement, pump-probe measurement, and micromachining at multiple points. (c) 2005 Optical Society of America.

Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation

The gain recoveries in quantum dot semiconductor optical amplifiers (QD SOAs) are numerically studied by rate equation simulation. Similar to the optical pump-probe experiment, the injection of double 150 fs optical pulses is used to simulate the gain recovery of a weak continuous signal under different injection levels, inhomogeneous broadenings, detuning wavelengths, and pulse signal energies for the QD SOAs. The obtained gain recoveries are then fitted by a response function with multiple exponential terms to determine the response times. The gain recovery can be described by three exponential terms with the time constants, which can be explained as carrier relaxation from the excited state to the ground state, carrier captured by the excited state from the wetting layer, and the supply of the wetting layer carriers. The fitted lifetimes decrease with the increase of the injection currents under gain unsaturation, slightly decrease with the decrease of inhomogeneous broadening of QDs, and increase with the increase of detuning wavelength between continuous signal and pulse signal and the increase of the pulse energy.