116 resultados para power of metaphor


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In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 mum, The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-mum-wide stripe lasers having a cavity length of 800 mum, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34 degrees, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW/mum) demonstrates reliable performance. For 4-mum-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW/mum are obtained.

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The analysis and calculation of the compensation for the phase mismatch of the frequency-doubling using the frequency space chirp introduced from prisms are made. The result shows that suitable lens can compensate the phase mismatch in a certain extent resulting from wide femtosecond spectrum when the spectrum is space chirped. By means of this method, the experiment of second harmonic generation is carried out using a home-made femtosecond KLM Ti:sapphire laser and BBO crystal. The conversion efficiency of SHG is 63 %. The average output power of blue light is 320 mW. The central wavelength is 420 nm. The spectrum bandwidth is 5.5 nm. It can sustain the pulse width of 33.6 fs. The tuning range of blue light is 404-420 nm,when the femtosecond Ti:sapphire optical pulse is tuned using the prisms in the cavity.

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The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

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Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

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The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography. However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product. Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography. ECR plasma seems to be one of the alternatives. In order to investigate the feasibility of ECR plasma as a EUV light source, the EUV power emitted by SECRAL was measured. A EUV power of 1.03W in 4 pi sr solid angle was obtained when 2000W 18GHz rf power was launched, and the corresponding CE was 0.5%. Considering that SECRAL is designed to produce very high charge state ions, this very preliminary result is inspiring. Room-temperature ECR plasma and Sn plasma are both in the planned schedule.

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The effect of the particle cover over the density interface between two layers of fluids and of the suspended solid particles in the upper turbulcnt layer on the turbulent entrainment has been studied experimentally. The entrainment distance D is a function of the time of power: D=kt, where =0.200-0.130p. For suspended particles in the upper layer and pure 2-layer fluid is equal to 0.200, but the value of k for the suspended particles is smaller than that for the pure 2-layer fluid. The non-dimensional entrainment velocity is E=KRiln, where n=1.50+0.93 p. It is shown that the particle cover over the interface changes the power of Ril in the entrainment and hinders the turbulent entrainment. The variation rule of E for the suspended particles is the same as that for the pure 2-layer fluid, but the K value of the former is smaller than that of the latter. The turbulent mixing mechanism has been discussed.

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The effect of the particle cover over the density interface between two layers of fluids and of the suspended solid particles in the upper turbulcnt layer on the turbulent entrainment has been studied experimentally. The entrainment distance D is a function of the time of power: D=kt, where =0.200-0.130p. For suspended particles in the upper layer and pure 2-layer fluid is equal to 0.200, but the value of k for the suspended particles is smaller than that for the pure 2-layer fluid. The non-dimensional entrainment velocity is E=KRiln, where n=1.50+0.93 p. It is shown that the particle cover over the interface changes the power of Ril in the entrainment and hinders the turbulent entrainment. The variation rule of E for the suspended particles is the same as that for the pure 2-layer fluid, but the K value of the former is smaller than that of the latter. The turbulent mixing mechanism has been discussed.

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In this paper we deduce the formulae for rate-constant of microreaction with high resolving power of energy from the time-dependent Schrdinger equation for the general case when there is a depression on the reaetional potential surface (when the depression is zero in depth, the case is reduced to that of Eyring). Based on the assumption that Bolzmann distribution is appropriate to the description of reactants, the formula for the constant of macrorate in a form similar to Eyring's is deduced and the expression for the coefficient of transmission is given. When there is no depression on the reactional potential surface and the coefficient of transmission does not seriously depend upon temperature, it is reduced to Eyring's. Thus Eyring's is a special case of the present work.

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The mechanisms of shock focusing in inner cavities of double wedge and cone are compared with that of traditional curved-surface shock focusing. The results show that there are many high temperature regions just behind shock surface which appear in two place alternately, one is near the surface of wall and the other is near the centerline. Also, changes in temperature, pressure, energy and power of the high temperature regions were analyzed and the results show that energy and power per unit volume increase, but total energy and power in the high temperature regions decrease during the process of shock moving forward the apex of double wedge or cone.

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A theoretical investigation of the nonlinear copropagation of two optical pulses of different frequencies in a photonic crystal fiber is presented. Different phenomena are observed depending on whether the wavelength of the signal pulse is located in the normal or the anomalous dispersion region. In particular, it is found that the phenomenon of pulse trapping occurs when the signal wavelength is located in the normal dispersion region while the pump wavelength is located in the anomalous dispersion region. The signal pulse suffers cross-phase modulation by the Raman shifted soliton pulse and it is trapped and copropagates with the Raman soliton pulse along the fiber. As the input peak power of the pump pulse is increased, the red-shift of the Raman soliton is considerably enhanced with the simultaneous further blue-shift of the trapped pulse to satisfy the condition of group velocity matching.

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The influence of focus spot and target thickness on multi-keV x-ray sources generated by 2 ns duration laser heated solid targets are investigated on the Shenguang II laser facility. In the case of thick-foil targets, the experimental data and theoretical analysis show that the emission volume of the x-ray sources is sensitive to the laser focus spot and proportional to the 3 power of the focus spot size. The steady x-ray flux is proportional to the 5/3 power of the focus spot size of the given laser beam in our experimental condition. In the case of thin-foil targets, experimental data show that there is an optimal foil thickness corresponding to the given laser parameters. With the given laser beam, the optimal thin-foil thickness is proportional to the -2/3 power of the focus spot size, and the optimal x-ray energy of thin foil is independent of focus spot size. (C) 2008 American Institute of Physics.

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We investigate the laser actions of 5at.% Yb:Gd2xY2(1-x)SiO5 (Yb:GYSO; x = 0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9 W. In contrast, the sample cut parallel reaches only 1.65 W at 1044 nm with a slope elLiciency of 33.76% with absorbed pump power of 7.99 W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68 nm to 1084.82 nm.

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We demonstrated optical amplification at 1550 nm with a carbon tetrachloride solution of Er3+-Yb3+ codoped NaYF4 nanocubes synthesized with solvo-thermal route. Upon excitation with a 980 nm laser diode, the nanocube solution exhibited strong near-infrared emission by the I-4(13/2) -> I-4(15/2) transition of Er3+ ions due to energy transfer from Yb3+ ions. We obtained the highest optical gain coefficient at 1550 nm of 0.58 cm(-1) for the solution with the pumping power of 200 mW. This colloidal solution might be a promising candidate as a liquid medium for optical amplifier and laser at the optical communication wavelength. (C) 2009 Optical Society of America

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Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

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Fluorescence spectra of Nd: YVO4 under excitation of a continuous wave (CW) diode laser and a femtosecond laser at 800nm were investigated. It was found that Nd: YVO4 shows different upconversion and downconversion luminescencent behaviors when excited by the diode laser and the femtosecond laser. The dependence of the upconversion luminescence intensity on the pump power of the femtosecond laser was discussed. The populations of the upper energy levels for upconversion and downconversion luminescence were calculated based on the Bloch equations. The calculations agree well with the experimental results. (c) 2007 Optical Society of America.