A COMPARATIVELY LOW-QUALITY SILICON MATERIAL IMPROVED FOR SOLAR-CELL FABRICATION

A comparatively low-quality silicon wafer (with a purity of almost-equal-to 99.9%) was adopted to form a silicon-on-defect-layer (SODL) structure featuring improved crystalline silicon near the defect layer (DL) by means of proton implantation and subsequent annealing. Thus, the SODL technique provides an opportunity to enable low-quality silicon wafers to be used for fabrication of low-cost solar cells.

35-PERCENT EFFICIENT NONCONCENTRATING NOVEL SILICON SOLAR-CELL

An energy conversion efficiency of 35% was obtained at 1-sun, air mass 1.5 for a novel silicon cell having an area of 2.3 X 2.3 mm2 . cell. The critical feature of the cell structure is the inclusion of local defect layers near a p-n junction. The local defect layers were proven to hold the key to achieving the exceptionally high efficiency of the novel cell fabricated via noncomplex processing.

The cost estimate for a novel cheap solar cell

The estimate for the lowest cost of SODL (silicon on defect layer) solar cell is made according to the price standard of present market. The estimate shows that the PV (photovoltaics) energy costs can be reduced from today's 25-30 cents/(kW h) to 7-8 cents/(kW h) which is comparable with the present cost of electricity generated by traditional energy sources such as fossil and petroleum fuels. The PV energy costs could be reduced to a value lower than 7-8 cents(kW h) by developing SODL technology. The SODL solar cell manufacture featuring simple processes is suitable to large scale automated assembly lines with high yield of large area cells. Some new ideas are suggested, favoring the further reduction in the cost of commercial solar cells.

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Boron-doped hydrogenated silicon films with different gaseous doping ratios (B_2H_6/SiH_4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (E_a). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption.

Analysis of leakage current in GaAs micro-solar cell arrays

The output characteristics of micro-solar cell arrays are analyzed on the basis of a modified model in which the shunt resistance between cell lines results in current leakage. The modification mainly consists of adding a shunt resistor network to the traditional model. The obtained results agree well with the reported experimental results. The calculation results demonstrate that leakage current in substrate affects seriously the performance of GaAs micro- solar cell arrays. The performance of arrays can be improved by reducing the number of cells per line. In addition, at a certain level of integration, an appropriate space occupancy rate of the single cell is recommended for ensuring high open circuit voltages, and it is more appropriate to set the rates at 80%-90% through the calculation.

A new heteroleptic ruthenium sensitizer enhances the absorptivity of mesoporous titania film for a high efficiency dye-sensitized solar cell

A heteroleptic polypyridyl ruthenium complex, cis-Ru(4,4'-bis(5-octylthieno[3,2-b]thiophen-2-yl)-2,2'-bipyridine)(4,4'-dicarboxyl-2,2'-bipyridine)(NCS) 2, with a high molar extinction coefficient of 20.5 x 10(3) M-1 cm(-1) at 553 nm has been synthesized and demonstrated as a highly efficient sensitizer for a dye-sensitized solar cell, giving a power conversion efficiency of 10.53% measured under an irradiation of air mass 1.5 global ( AM 1.5G) full sunlight.

Novel NIR-absorbing conjugated polymers for efficient polymer solar cells: effect of alkyl chain length on device performance

Three low bandgap conjugated polymers, i.e., PDTPBT-C8, PDTPBT-C6 and PDTPBT-C5, which consist of alternating N-alkyl dithieno[3,2-b: 2',3'-d] pyrrole and 2,1,3-benzothiadiazole units and carry 1-octylnonyl, 1-hexylheptyl and 1-pentylhexyl as side chains, respectively, were synthesized. These polymers show strong absorption in the wavelength range of 600-900 nm with enhanced absorption coefficient as the length of alkyl chain decreases. The film morphology of the polymers and 1-(3-methoxycarbonyl) propyl-1-phenyl-[6,6]-C-61 (PCBM) blends is also dependent on the alkyl chain length. As the length decreases, the film becomes more uniform and the domian size decreases from 400-900 nm for PDTPBT-C8 to similar to 50 nm for PDTPBT-C5.

Toward high-performance polymer solar cells: The importance of morphology control

Polymer solar cells have the potential to become a major electrical power generating tool in the 21st century. R&D endeavors are focusing on continuous roll-to-roll printing of polymeric or organic compounds from solution-like newspapers-to produce flexible and lightweight devices at low cost. It is recognized, though, that besides the functional properties of the compounds the organization of structures on the nanometer level-forced and controlled mainly by the processing conditions applied-determines the performance of state-of-the-art polymer solar cells. In such devices the photoactive layer is composed of at least two functional materials that form nanoscale interpenetrating phases with specific functionalities, a so-called bulk heterojunction. In this perspective article, our current knowledge on the main factors determining the morphology formation and evolution is introduced, and gaps of our understanding on nanoscale structure-property relations in the field of high-performance polymer solar cells are addressed. Finally, promising routes toward formation of tailored morphologies are presented.

Enhance the optical absorptivity of nanocrystalline TiO2 film with high molar extinction coefficient ruthenium sensitizers for high performance dye-sensitized solar cells

We report two new heteroleptic polypyridyl ruthenium complexes, coded C101 and C102, with high molar extinction coefficients by extending the pi-conjugation of spectator ligands, with a motivation to enhance the optical absorptivity of mesoporous titania film and charge collection yield in a dye-sensitized solar cell. On the basis of this C101 sensitizer, several DSC benchmarks measured under the air mass 1.5 global sunlight have been reached.

A highly efficient light-trapping structure for thin-film silicon solar cells

A highly efficient light-trapping structure, consisting of a diffractive grating, a distributed Bragg reflector (DBR) and a metal reflector was proposed. As an example, the proposed light-trapping structure with an indium tin oxide (ITO) diffraction grating, an a-Si:H/ITO DBR and an Ag reflector was optimized by the simulation via rigorous coupled-wave analysis (RCWA) for a 2.0-mu m-thick c-Si solar cell with an optimized ITO front antireflection (AR) layer under the air mass 1.5 (AM1.5) solar illumination. The weighted absorptance under the AM1.5 solar spectrum (A(AM1.5)) of the solar cell can reach to 69%, if the DBR is composed of 4 pairs of a-Si:H/ITOs. If the number of a-Si:H/ITO pairs is up to 8, a larger A(AM1.5) of 72% can be obtained. In contrast, if the Ag reflector is not adopted, the combination of the optimized ITO diffraction grating and the 8-pair a-Si:H/ITO DBR can only result in an A(AM1.5) of 68%. As the reference, A(AM1.5) = 31% for the solar cell only with the optimized ITO front AR layer. So, the proposed structure can make the sunlight highly trapped in the solar cell. The adoption of the metal reflector is helpful to obtain highly efficient light-trapping effect with less number of DBR pairs, which makes that such light-trapping structure can be fabricated easily.

The application of SnS nanoparticles to bulk heterojunction solar cells

Tin mono-sulphide (SnS) nanoparticles were synthesized by a facile method. Reactions producing narrow size distribution SnS nanoparticles with the diameter of 5.0-10 nm were carried out in an ethylene glycol solution at 150 degrees C for 24 h. Bulk heterojunction solar cells with the structure of indium tin oxide (ITO)/polyethylenedioxythiophene polystyrenesulphonate (PEDOT PSS)/SnS polymer/Al were fabricated by blending the nanoparticles with a conjugated polymer to form the active layer for the first time. Current density-voltage characterization of the devices showed that due to the addition of SnS nanoparticles to the polymer film, the device performance can be dramatically improved, compared with that of the pristine polymer solar cells. (c) 2009 Published by Elsevier B.V.

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and metal materials, the excitation of surface-plasmon polaritons leads to obvious absorption enhancements in a wide near-IR range for different ridge shapes and periods. The highest enhancement factor of the cell external quantum efficiency is estimated to be 3.32. The optimized structure can achieve an increase of 17.12% in the cell efficiency. (C) 2009 Optical Society of America

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells

Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si: H/mu c-Si: H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.