Investigation on nonradiative decay of the (Er3+I13/2)-I-4 -> I-4(15/2) transition in different tellurite glass matrix

Three kinds of Er3+-doped tellurite glasses with different hydroxyl groups are prepared by the conventional melt-quenching method. Infrared spectra are measured to estimate the exact content of OH- groups in samples. The maximum phonon energy in glasses are obtained by measuring the Raman scattering spectra. The strength parameters Omega(t) (t = 2, 4, 6) for all the samples are calculated and compared. The nonradiative decay rate of the Er3+ I-4(13/2) -> I-4(15/2) transition are calculated for the glass samples with different phonon energy and OH- group contents. Finally, the effect of OH- groups on fluorescence decay rate of Er3+ is analysed, the constant KOH-Er Of TWN, TZPL and TZL glasses are calculated to be 9.2 x 10(-19) cm(4)s(-1), 5.9 x 10(-19) cm(4)s(-1), and 3.5 x 10(-19) cm(4)s(-1), respectively.

Phylogeny and zoogeography of the cyprinid hemicultrine group (Cyprinidae : Cultrinae)

Ying-Gui Dai and Jun-Xing Yang (2003) Phylogeny and zoogeography of the cyprinid hemicultrine group (Cyprinidae: Cultrinae). Zoological Studies 42(1): 73-92. The hemicultrine group consists of middle-sized cyprinids in Asia which taxonomically belong to the subfamily Cultrinae in the Cyprinidae (Cypriniformes), but there has been no convincing generic phylogenetic hypothesis proposal so far. On the basis of a morphological study of 65 specimens soaked in formalin and 14 skeletal specimens of 8 species in 6 genera within the hemicultrine group as an ingroup, a 70-character matrix was obtained. The generic phylogenetic relationships of the hemicultrine group are hypothesized with the matrix by the method of cladistic analysis. When the species Rasborinus lineatus or Cultrichthys erythropterus is used as the sole outgroup, the matrix gives the same single most-parsimonious tree of generic phylogenetic relationships within the hemicultrine group which shows that the hemicultrine group forms a monophyletic group. However, when Rasborinus lineatus is used as the sole outgroup and Cultrichthys erythropterus and Paralaubuca barroni are included in the ingroup, the hemicultrine group is validated to represent a paraphyletic group, and the hemicultrine group and the genus Paralaubuca form a monophyletic group. The tree of generic relationships and zoogeography of the monophyletic group comprising the hemicultrine group and the genus Paralaubuca suggest the following: (1) The monophyletic group comprises 2 smaller monophyletic groups: the genera Hemiculterella + Pseudohemiculter + Hainania and the genera Hemiculter + Paralaubuca + Pseudolaubuca + Toxabramis. (2) The sister groups of the monophyletic group show both overlapping and vicariant distribution patterns; therefore the generic distribution pattern of the monophyletic group maybe have resulted from both dispersal and vicariance events. (3) The monophyletic group probably originated on the Asian mainland from the Yangtze River to the Pearl River and on Hainan Island in China. (4) The monophyletic group probably originated after the Japanese Archipelago was separated from the Asian mainland at the beginning of the Quaternary Period in the Cenozoic but before Taiwan, Hainan Island, and Indonesia were completely isolated from the Asian mainland after the ice age in the Quaternary Period. (5) Speciation of the genus Hemiculter should have been the earliest, and those of the genera Paralaubuca, Pseudolaubuca, and Hainania ought to be the latest in the process of evolution of this monophyletic group. http://www.sinica.edu.tw/zool/zoolstud/42.1/73.pdf.

Research progresses of SOI optical waveguide devices and integrated optical switch matrix

SOI (silicon-on-insulator) is a new material with a lot of important performances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2X2 thermal-optical switch were successfully designed and fabricated. Based on these, 4X4 and 8X8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.

Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix

We have investigated the dependence on hydrostatic pressure of the photoluminescence of an InAs submonolayer embedded in a GaAs matrix at 15 K and for pressure up to 8 GPa. Strong InAs-related emissions are observed in all three samples at ambient pressure. The temperature dependence of the emission intensity for these Peaks can be well characterized by the thermal activation of excitons from the InAs layer to the GaAs matrix. With increasing pressure, the InAs-related peaks shift to. higher energies. The pressure coefficients of these peaks are very close to that of the free exciton in bulk GaAs. Some weak peaks observed at pressures above 4.2 GPa are attributed to indirect transitions involving X states in the InAs layer. These results are similar to the pressure behaviour observed in the InAs/GaAs monolayer structures. A group of new lines has been observed in the spectra when pressure is increased beyond 2.5 GPa, which is attributed to the N isoelectronic traps in the GaAs matrix.

SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors

SOI (Silicon on Insulator) based photonic devices has attracted more and more attention in the recent years. Integration of SOI optical switch matrix with isolating grooves, total internal reflection (TIR) mirrors and spot size converter (SSC) was studied. A folding re-arrangeable non-blocking 4x4 optical switch matrix and a blocking 16x16 matrix with TIR mirrors and SSC were fabricated on SOI wafer. The performaces, including extinction ratio and the crosstalk, are better than before. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length, more bend and intersecting waveguides. The insertion losses decrease 2 similar to 3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.

Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix

The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model.

SOI-based thermo-optic waveguide switch matrix with spot size converters

A SOI-based thermo-optic waveguide switch matrix worked at 1.55 mu m, integrated with spot size converters is designed and fabricated for the first time. The insertion loss and polarization dependent loss are less than 13dB and 2dB, respectively. The extinction ratio is larger than 19dB. The response time is less than 5 mu s and the power consumption of the switch cell is about 200mW.

Silicon-on-insulator based optical waveguide and integrated switch matrix

zhangdi于2010-03-29批量导入

Spectroscopic Study on Water Diffusion in Poly(ester urethane) Block Copolymer Matrix

The diffusion of water in a phase-separated biodegradable poly(ester urethane) shape-memory polymer with poly(E-caprolactone) (PCL) as the soft segment was investigated using time-resolved FTIR-ATR. On the basis of the band fitting and water ordering in drawn films, the broad water band in the 3800-2800 cm(-1) region was decomposed into four bands located at 3620, 3510, 3400, and 3260 cm(-1), and the first two components at 3620 and 35 10 cm(-1) were assigned to the vibrations of antisymmetric and symmetric stretching of water hydrogen bonded with the C=O group of the soft segment. The other two were associated with water bonded to the urethane hard segments in the forms of N-H:O-H:O=C bridge hydrogen bond and double hydrogen bonds with two C=O groups, respectively. Furthermore, band fitting and two-dimensional correlation analyses revealed that in the diffusion process, water first diffuses into the continuous soft-rich PCL phase and then into the hard-rich urethane domains, forming double hydrogen bonds with two C=O groups prior to the bridge hydrogen bond in the form of N-H:O-H:O=C.